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The correlation of surface impurity states with the antiferromagnetic ground states is crucial for understanding the formation of the topological surface state in the antiferromagnetic topological insulators MnBi2Te4. By using low-temperature scanning tunneling microscopy and spectroscopy, we observed a localized bound state around the Mn-Bi antisite defect at the Te-terminated surface of the antiferromagnetic topological insulator MnBi2Te4. When applying a magnetic field perpendicular to the surface (Bz) from –1.5 to 3.0 T, the bound state shifts linearly to a lower energy with increasing Bz, which is attributed to the Zeeman effect. Remarkably, when applying a large range of Bz from –8.0 to 8.0 T, the magnetic field induced reorientation of surface magnetic moments results in an abrupt jump in the local density of states (LDOS), which is characterized by LDOS-change-ratio dσ~/dB quantitatively. Interestingly, two asymmetric critical field, –2.0 and 4.0 T determined by the two peaks in dσ~/dB are observed, which is consistent with simulated results according to a Mills-model, describing a surface spin flop transition (SSF). Our results provide a new flatform for studying the interplay between magnetic order and topological phases in magnetic topological materials.

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Publication history
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Acknowledgements

Publication history

Received: 24 March 2022
Revised: 28 May 2022
Accepted: 21 June 2022
Published: 10 August 2022
Issue date: January 2023

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

We thank Werner A. Hofer for critical reading of the manuscript and Ziqiang Wang for helpful discussion. This work is supported by the National Natural Science Foundation of China (Nos. 61888102 and 52022105), National Key Research and Development Projects of China (Nos. 2018YFA0305800 and 2019YFA0308500), the Strategic Priority Research Program of Chinese Academy of Sciences (Nos. XDB30000000 and XDB28000000), CAS Project for Young Scientists in Basic Research (No. YSBR-003), and the University of Chinese Academy of Sciences.

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