Journal Home > Volume 15 , Issue 10

Deep ultraviolet (DUV) phototransistors are key integral of optoelectronics bearing a wide spectrum of applications in flame sensor, military detector, oil spill detection, biological sensor, and artificial intelligence fields. In order to further improve the responsivity of UV photodetectors based on β-Ga2O3, in present work, high-performance β-Ga2O3 phototransistors with local back-gate structure were experimentally demonstrated. The phototransistor shows excellent DUV photoelectrical performance with a high responsivity of 1.01 × 107 A/W, a high external quantum efficiency of 5.02 × 109%, a sensitive detectivity of 2.98 × 1015 Jones, and a fast rise time of 0.2 s under 250 nm illumination. Besides, first-principles calculations reveal the decent stability of β-Ga2O3 nanosheet against oxidation and humidity without significant performance degradations. Additionally, the hexagonal boron nitride (h-BN)/β-Ga2O3 phototransistor can behave as a photonic synapse with ultralow power consumption of ~ 9.6 fJ per spike, which shows its potential for neuromorphic computing tasks such as facial recognition. This β-Ga2O3 phototransistor will provide a perspective for the next generation optoelectrical systems.

File
12274_2022_4574_MOESM1_ESM.pdf (2.8 MB)
Publication history
Copyright
Acknowledgements

Publication history

Received: 13 April 2022
Revised: 18 May 2022
Accepted: 23 May 2022
Published: 19 July 2022
Issue date: October 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 62027818, 61874034, 51861135105, and 51972319), International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan (No.21520713300), and Science and Technology Commission of Shanghai Municipality (No. 19520744400). The authors thank beamlines BL17B1, BL19U1, BL19U2, and BL01B1 staff at the SSRF and User Experiment Assist System of SSRF for their help. The authors thank Prof. Changtai Xia’s group from Key Laboratory of Materials for High Power Laser Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences for providing the β-Ga2O3 bulk single crystal.

Return