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Nano Research 2022, 15(9): 8579-8586 https://doi.org/10.1007/s12274-022-4481-5
Research Article | Issue | Published: 23 June 2022

Optical and electronic anisotropy of a 2D semiconductor SiP

Show Author's Information Shijun Hou1,2,  Zhengfeng Guo3,  Tao Xiong1,2,  Xingang Wang1,2,  Juehan Yang1,2,  Yue-Yang Liu1,2,  Zhi-Chuan Niu1,2,5,  Shiyuan Liu3,  Bing Liu5,  Shenqiang Zhai4( ),  Honggang Gu3( ),  Zhongming Wei1,2,5( )
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Joint Laboratory of Advanced Semiconductor, Nanjing Guoke Semiconductor CO., Ltd., Nanjing 210008, China
Keywords:
two-dimensional materials, optical anisotropy, SiP, electrical anisotropy, photoelectronic properties
Topics:
Semiconductor devices
Cite this article:
Hou S, Guo Z, Xiong T, et al. Optical and electronic anisotropy of a 2D semiconductor SiP. Nano Research, 2022, 15(9): 8579-8586. https://doi.org/10.1007/s12274-022-4481-5
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Abstract Full text Electronic supplementary material About this article

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements, which is a very important and popular research direction at present. As a IV-V two-dimensional material, silicon phosphide (SiP) has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties. Herein, the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy, and its electrical anisotropy is tested by SiP-based field-effect transistor. In addition, the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it. In various measurements, SiP exhibits obvious anisotropy and good photoelectric performance. This work provides basic optical, electrical, and photoelectric performance information of SiP, and lays a foundation for further study of SiP and applications of SiP-based devices.


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Electronic supplementary material
About this article

Optical and electronic anisotropy of a 2D semiconductor SiP

Show Author's information Shijun Hou1,2, Zhengfeng Guo3, Tao Xiong1,2, Xingang Wang1,2, Juehan Yang1,2, Yue-Yang Liu1,2, Zhi-Chuan Niu1,2,5, Shiyuan Liu3, Bing Liu5, Shenqiang Zhai4( ), Honggang Gu3( ), Zhongming Wei1,2,5( )
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Joint Laboratory of Advanced Semiconductor, Nanjing Guoke Semiconductor CO., Ltd., Nanjing 210008, China

Abstract

Two-dimensional anisotropic materials have been widely concerned by researchers because of their great application potential in the field of polarized detector devices and optical elements, which is a very important and popular research direction at present. As a IV-V two-dimensional material, silicon phosphide (SiP) has obvious in-plane anisotropy and exhibits excellent optical and electrical anisotropy properties. Herein, the optical anisotropy of SiP is studied by spectrometric ellipsometry measurements and polarization-resolved optical microscopy, and its electrical anisotropy is tested by SiP-based field-effect transistor. In addition, the normal and anisotropic photoelectric performance of SiP is shown by fabricating a photodetector and measuring it. In various measurements, SiP exhibits obvious anisotropy and good photoelectric performance. This work provides basic optical, electrical, and photoelectric performance information of SiP, and lays a foundation for further study of SiP and applications of SiP-based devices.

Keywords: two-dimensional materials, optical anisotropy, SiP, electrical anisotropy, photoelectronic properties

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Publication history
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Acknowledgements

Publication history

Received: 15 March 2022
Revised: 17 April 2022
Accepted: 28 April 2022
Published: 23 June 2022
Issue date: September 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 62125404, 62174155, 62004193, 12004375, and 51727809), the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB43000000), the CAS-JSPS Cooperative Research Project (No. GJHZ2021131), and the Youth Innovation Promotion Association of CAS (No. 2022112).

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