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The heterostructure of transition metal nanocrystal on two-dimensional (2D) materials exhibits unique physical and chemical properties through various interfacial interactions. It has been established that the atomic structure and strain in the vicinity of the interface determine the band structure and phonon modes of the nanocrystal, regulating the optical and electrical properties of such heterostructures. Hence, metal–support interfacial engineering is a demonstrated approach to acquiring desired properties of the nanocrystals. However, a fundamental understanding of the interfacial structures remains elusive and precise control of the interactions has yet achieved. Herein, we explore the regulation of interface on MoS2 supported Pt nanocrystals which were prepared by reducing ultrasonic dispersed potassium chloroplatinate. The Pt-MoS2 heterostructure interface was systematically studied by aberration corrected transmission electron microscopy. Three types of Pt-MoS2 interfaces with distinct atomic configurations were identified. The strain within the Pt nanocrystals is sensitive to the atomic configuration of the supporting MoS2, which regulates the size of the Pt nanocrystals. These results provide insights on tuning of nanocrystal strain, paving the way for precise control of 2D semiconductor heterostructures.

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Publication history
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Acknowledgements

Publication history

Received: 17 March 2022
Revised: 12 April 2022
Accepted: 20 April 2022
Published: 31 May 2022
Issue date: September 2022

Copyright

© Tsinghua University Press 2022, corrected publication 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (No. 2018YFA0703700), the National Natural Science Foundation of China (Nos. 12034002, 51971025, 11974041, 51901012, and 52071022), Natural Science Foundation of Beijing, China (No. 2212034), and the Fundamental Research Funds for the Central Universities (No. FRF-TP-18-075A1). The computing work was supported by USTB MatCom of Beijing Advanced Innovation Center for Materials Genome Engineering.

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