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Nano Research 2022, 15(9): 8428-8434 https://doi.org/10.1007/s12274-022-4438-8
Research Article | Issue | Published: 15 June 2022

2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection

Show Author's Information Qingqing Luo1,2,  Guangyuan Feng1,2,  Yaru Song1,2,  Enbing Zhang1,2,  Jiangyan Yuan1,2,  Dejuan Fa1,2,  Qisheng Sun1,2,  Shengbin Lei1,2( ),  Wenping Hu1,2
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China
Keywords:
MoS2, heterojunction, polyimide film, near-infrared phototransistor
Topics:
Photodetectors
Cite this article:
Luo Q, Feng G, Song Y, et al. 2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection. Nano Research, 2022, 15(9): 8428-8434. https://doi.org/10.1007/s12274-022-4438-8
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a MoS2–2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × 1012 Jones, a photogain 1.04 × 105, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 μW/cm2), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to MoS2. The face-to-face spatial configuration of MoS2–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs.


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Electronic supplementary material
About this article

2D-polyimide film sensitized monolayer MoS2 phototransistor enabled near-infrared photodetection

Show Author's information Qingqing Luo1,2, Guangyuan Feng1,2, Yaru Song1,2, Enbing Zhang1,2, Jiangyan Yuan1,2, Dejuan Fa1,2, Qisheng Sun1,2, Shengbin Lei1,2( ), Wenping Hu1,2
Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
Collaborative Innovation Center of Chemical Science and Engineering, Tianjin 300072, China

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDCs)-based heterostructures open the door to fabricate various promising hybrid photodetectors, while it is still a challenge to achieve excellent and stable near-infrared (NIR) photoresponse. Here, a MoS2–2DPI (2D-polyimide (2DPI)) heterojunction-based phototransistor (HPT) was fabricated. Near-infrared photodetection with excellent performance has been realized. This HPT exhibited a photoresponsivity of 390.5 A/W, a specific detectivity of 5.10 × 1012 Jones, a photogain 1.04 × 105, and a photoresponse rise and decay time of 400 and 430 ms (λ = 900 nm, P = 16.2 μW/cm2), respectively. It also shows a broadband wavelength response from 405 to 1,020 nm. This superior performance could be attributed to the strong near-infrared absorption and the type-II (staggered) band alignment which ensures efficient charge transfer from 2DPI to MoS2. The face-to-face spatial configuration of MoS2–2DPI heterostructures ensures efficient transfer of photoinduced carriers through the interface, electron and holes can be separated due to the large band offsets. This work presents a significant step for the manipulation of high-performance NIR photodetector of two-dimensional covalent organic polymer-sensitized monolayer TMDCs.

Keywords: MoS2, heterojunction, polyimide film, near-infrared phototransistor

References(59)

1

Baeg, K. J.; Binda, M.; Natali, D.; Caironi, M.; Noh, Y. Y. Organic light detectors: Photodiodes and phototransistors. Adv. Mater. 2013, 25, 4267–4295.
DOI Google Scholar
2

Iqbal, M. A.; Liaqat, A.; Hussain, S.; Wang, X. S.; Tahir, M.; Urooj, Z.; Xie, L. M. Ultralow-transition-energy organic complex on graphene for high-performance shortwave infrared photodetection. Adv. Mater. 2020, 32, 2002628.
DOI Google Scholar
3

Li, N.; Lan, Z. J.; Cai, L. F.; Zhu, F. R. Advances in solution-processable near-infrared phototransistors. J. Mater. Chem. C 2019, 7, 3711–3729.
DOI Google Scholar
4

Liu, C.; Wang, K.; Gong, X.; Heeger, A. J. Low bandgap semiconducting polymers for polymeric photovoltaics. Chem. Soc. Rev. 2016, 45, 4825–4846.
DOI Google Scholar
5

Liu, X. D.; Lin, Y. W.; Liao, Y. J.; Wu, J. Z.; Zheng, Y. H. Recent advances in organic near-infrared photodiodes. J. Mater. Chem. C 2018, 6, 3499–3513.
DOI Google Scholar
6

Grein, C. H.; Young, P. M.; Flatté, M. E.; Ehrenreich, H. Long wavelength InAs/InGaSb infrared detectors: Optimization of carrier lifetimes. J. Appl. Phys. 1995, 78, 7143–7152.
DOI Google Scholar
7

Chaubet, M.; Mollier, J. C.; Sage, J. P.; Roizes, A.; Aubry, Y. Feasibility study of a new heterodyne technique based on HgCdTe varactor photodetectors for space-borne wind lidars. Microw. Opt. Technol. Lett. 1995, 8, 179–184.
DOI Google Scholar
8

Myers, S.; Plis, E.; Kim, H. S.; Khoshakhlagh, A.; Gautam, N.; Lee, S. J.; Noh, S. K.; Krishna, S. Heterostructure engineering in type-Ⅱ InAs/GaSb strained layer superlattices. Phys. Status Solidi 2010, 7, 2506–2509.
DOI Google Scholar
9

He, L.; Yang, J. R.; Wang, S. L.; Wu, Y.; Fang, W. Z. Recent progress in molecular beam epitaxy of HgCdTe. Adv. Mater. 1999, 11, 1115–1118.
DOI
10

Jaworowicz, K.; Ribet-Mohamed, I.; Cervera, C.; Rodriguez, J. B.; Christol, P. Noise characterization of midwave infrared InAs/GaSb superlattice pin photodiode. IEEE Photon. Technol. Lett. 2011, 23, 242–244.
DOI Google Scholar
11

Deng, Y. X.; Luo, N.; Conrad, N.; Liu, H.; Gong, Y. J.; Najmaei, S.; Ajayan, P. M.; Lou, J.; Xu, X. F.; Ye, P. D. Black phosphorus-monolayer MoS2 van der Waals heterojunction p–n diode. ACS Nano 2014, 8, 8292–8299.
DOI Google Scholar
12

Hong, X. P.; Kim, J.; Shi, S. F.; Zhang, Y.; Jin, C. H.; Sun, Y. H.; Tongay, S.; Wu, J. Q.; Zhang, Y. F.; Wang, F. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures. Nat. Nanotechnol. 2014, 9, 682–686.
DOI Google Scholar
13

Komsa, H. P.; Krasheninnikov, A. V. Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles. Phys. Rev. B 2013, 88, 085318.
DOI Google Scholar
14

Wang, H. Y.; Li, Z. X.; Li, D. Y.; Chen, P.; Pi, L. J.; Zhou, X.; Zhai, T. Y. Van der Waals integration based on two-dimensional materials for high-performance infrared photodetectors. Adv. Funct. Mater. 2021, 31, 2103106.
DOI Google Scholar
15

Xue, Y. Z.; Zhang, Y. P.; Liu, Y.; Liu, H. T.; Song, J. C.; Sophia, J.; Liu, J. Y.; Xu, Z. Q.; Xu, Q. Y.; Wang, Z. Y. et al. Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano 2016, 10, 573–580.
DOI Google Scholar
16

Zhang, J.; Wang, J. H.; Chen, P.; Sun, Y.; Wu, S.; Jia, Z. Y.; Lu, X. B.; Yu, H.; Chen, W.; Zhu, J. Q. et al. Observation of strong interlayer coupling in MoS2/WS2 heterostructures. Adv. Mater. 2016, 28, 1950–1956.
DOI Google Scholar
17

Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712.
DOI Google Scholar
18

Choi, W.; Cho, M. Y.; Konar, A.; Lee, J. H.; Cha, G. B.; Hong, S. C.; Kim, S.; Kim, J.; Jena, D.; Joo, J. et al. High-detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared. Adv. Mater. 2012, 24, 5832–5836.
DOI Google Scholar
19

Lee, H. S.; Min, S. W.; Chang, Y. G.; Park, M. K.; Nam, T.; Kim, H.; Kim, J. H.; Ryu, S.; Im, S. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695–3700.
DOI Google Scholar
20

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
DOI Google Scholar
21

Kufer, D.; Nikitskiy, I.; Lasanta, T.; Navickaite, G.; Koppens, F. H. L.; Konstantatos, G. Hybrid 2D-0D MoS2-PbS quantum dot photodetectors. Adv. Mater. 2015, 27, 176–180.
DOI Google Scholar
22

Huo, N. J.; Gupta, S.; Konstantatos, G. MoS2-HgTe quantum dot hybrid photodetectors beyond 2 μm. Adv. Mater. 2017, 29, 1606576.
DOI Google Scholar
23

Bullock, J.; Amani, M.; Cho, J.; Chen, Y. Z.; Ahn, G. H.; Adinolfi, V.; Shrestha, V. R.; Gao, Y.; Crozier, K. B.; Chueh, Y. L. et al. Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature. Nat. Photonics 2018, 12, 601–607.
DOI Google Scholar
24

Ye, L.; Li, H.; Chen, Z. F.; Xu, J. B. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics 2016, 3, 692–699.
DOI Google Scholar
25

Long, M. S.; Liu, E. F.; Wang, P.; Gao, A. Y.; Xia, H.; Luo, W.; Wang, B. G.; Zeng, J. W.; Fu, Y. J.; Xu, K. et al. Broadband photovoltaic detectors based on an atomically thin heterostructure. Nano Lett. 2016, 16, 2254–2259.
DOI Google Scholar
26

Xin, Y.; Wang, X. X.; Chen, Z.; Weller, D.; Wang, Y. Y.; Shi, L. J.; Ma, X.; Ding, C. J.; Li, W.; Guo, S. et al. Polarization-sensitive self-powered type-II GeSe/MoS2 van der Waals heterojunction photodetector. ACS Appl. Mater. Interfaces 2020, 12, 15406–15413.
DOI Google Scholar
27

Zhang, K. N.; Zhang, T. N.; Cheng, G. H.; Li, T. X.; Wang, S. X.; Wei, W.; Zhou, X. H.; Yu, W. W.; Sun, Y.; Wang, P. et al. Interlayer transition and infrared photodetection in atomically thin type-II MoTe2/MoS2 van der Waals heterostructures. ACS Nano 2016, 10, 3852–3858.
DOI Google Scholar
28

Zou, Z. X.; Li, D.; Liang, J. W.; Zhang, X. H.; Liu, H. W.; Zhu, C. G.; Yang, X.; Li, L. H.; Zheng, B. Y.; Sun, X. X. et al. Epitaxial synthesis of ultrathin β-In2Se3/MoS2 heterostructures with high visible/near-infrared photoresponse. Nanoscale 2020, 12, 6480–6488.
DOI Google Scholar
29

Liu, X. L.; Chen, X. Q.; Yi, J. X.; Luo, Z. Z.; Nan, H. Y.; Guo, H.; Ni, Z. H.; Ding, Y.; Dai, S. Y.; Wang, X. R. Organic charge–transfer interface enhanced graphene hybrid phototransistors. Org. Electron. 2019, 64, 22–26.
DOI Google Scholar
30

Liu, Y.; Hao, W.; Yao, H. Y.; Li, S. Z.; Wu, Y. C.; Zhu, J.; Jiang, L. Solution adsorption formation of a π-conjugated polymer/graphene composite for high-performance field-effect transistors. Adv. Mater. 2018, 30, 1705377.
DOI Google Scholar
31

Sun, L. L.; Zeng, W. W.; Xie, C.; Hu, L.; Dong, X. Y.; Qin, F.; Wang, W.; Liu, T. F.; Jiang, X. S.; Jiang, Y. Y. et al. Flexible all-solution-processed organic solar cells with high-performance nonfullerene active layers. Adv. Mater. 2020, 32, 1907840.
DOI Google Scholar
32

Huang, Y. L.; Zheng, Y. J.; Song, Z. B.; Chi, D. Z.; Wee, A. T. S.; Quek, S. Y. The organic–2D transition metal dichalcogenide heterointerface. Chem. Soc. Rev. 2018, 47, 3241–3264.
DOI Google Scholar
33

Jariwala, D.; Howell, S. L.; Chen, K. S.; Kang, J. M.; Sangwan, V. K.; Filippone, S. A.; Turrisi, R.; Marks, T. J.; Lauhon, L. J.; Hersam, M. C. Hybrid, gate-tunable, van der Waals p–n heterojunctions from pentacene and MoS2. Nano Lett. 2016, 16, 497–503.
DOI Google Scholar
34

He, D. W.; Pan, Y. M.; Nan, H. Y.; Gu, S.; Yang, Z. Y.; Wu, B.; Luo, X. G.; Xu, B. C.; Zhang, Y. H.; Li, Y. et al. A van der Waals p–n heterojunction with organic/inorganic semiconductors. Appl. Phys. Lett. 2015, 107, 183103.
DOI Google Scholar
35

Vélez, S.; Ciudad, D.; Island, J.; Buscema, M.; Txoperena, O.; Parui, S.; Steele, G.; Casanova, F.; van der Zant, H. S. J.; Castellanos-Gomez, A. et al. Gate-tunable diode and photovoltaic effect in an organic-2D layered material p–n junction. Nanoscale 2015, 7, 15442–15449.
DOI Google Scholar
36

Yu, S. H.; Lee, Y.; Jang, S. K.; Kang, J.; Jeon, J.; Lee, C.; Lee, J. Y.; Kim, H.; Hwang, E.; Lee, S. et al. Dye-sensitized MoS2 photodetector with enhanced spectral photoresponse. ACS Nano 2014, 8, 8285–8291.
DOI Google Scholar
37

Sun, M. X.; Yang, P. F.; Xie, D.; Sun, Y. L.; Xu, J. L.; Ren, T. L.; Zhang, Y. F. Self-powered MoS2-PDPP3T heterotransistor-based broadband photodetectors. Adv. Electron. Mater. 2018, 5, 1800580.
DOI Google Scholar
38

Li, S. Y.; Chen, X. Q.; Liu, F. M.; Chen, Y. F.; Liu, B. Y.; Deng, W. J.; An, B. X.; Chu, F. H.; Zhang, G. Q.; Li, S. L. et al. Enhanced performance of a CVD MoS2 photodetector by chemical in situ n-type doping. ACS Appl. Mater. Interfaces 2019, 11, 11636–11644.
DOI Google Scholar
39

Zhou, Y. H.; An, H. N.; Gao, C.; Zheng, Z. Q.; Wang, B. UV–vis–NIR photodetector based on monolayer MoS2. Mater. Lett. 2019, 237, 298–302.
DOI Google Scholar
40

Li, Y.; Murthy, A. A.; DiStefano, J. G.; Jung, H. J.; Hao, S. Q.; Villa, C. J.; Wolverton, C.; Chen, X. Q.; Dravid, V. P. MoS2-capped CuxS nanocrystals: A new heterostructured geometry of transition metal dichalcogenides for broadband optoelectronics. Mater. Horiz. 2019, 6, 587–594.
DOI Google Scholar
41

Ra, H. S.; Kwak, D. H.; Lee, J. S. A hybrid MoS2 nanosheet-CdSe nanocrystal phototransistor with a fast photoresponse. Nanoscale 2016, 8, 17223–17230.
DOI Google Scholar
42

Wu, H. L.; Si, H. N.; Zhang, Z. H.; Kang, Z.; Wu, P. W.; Zhou, L. X.; Zhang, S. C.; Zhang, Z.; Liao, Q. L.; Zhang, Y. All-inorganic perovskite quantum dot-monolayer MoS2 mixed-dimensional van der Waals heterostructure for ultrasensitive photodetector. Adv. Sci. 2018, 5, 1801219.
DOI Google Scholar
43

Wang, L.; Jie, J. S.; Shao, Z. B.; Zhang, Q.; Zhang, X. H.; Wang, Y. M.; Sun, Z.; Lee, S. T. MoS2/Si heterojunction with vertically standing layered structure for ultrafast, high-detectivity, self-driven visible-near infrared photodetectors. Adv. Funct. Mater. 2015, 25, 2910–2919.
DOI Google Scholar
44

Xiao, P.; Mao, J.; Ding, K.; Luo, W. J.; Hu, W. D.; Zhang, X. J.; Zhang, X. H.; Jie, J. S. Solution-processed 3D RGO-MoS2/pyramid Si heterojunction for ultrahigh detectivity and ultra-broadband photodetection. Adv. Mater. 2018, 30, 1801729.
DOI Google Scholar
45

Huang, Y. M.; Zheng, W.; Qiu, Y. F.; Hu, P. G. Effects of organic molecules with different structures and absorption bandwidth on modulating photoresponse of MoS2 photodetector. ACS Appl. Mater. Interfaces 2016, 8, 23362–23370.
DOI Google Scholar
46

Bai, F.; Qi, J. J.; Li, F.; Fang, Y. Y.; Han, W. P.; Wu, H. L.; Zhang, Y. A high-performance self-powered photodetector based on monolayer MoS2/perovskite heterostructures. Adv. Mater. Interfaces 2018, 5, 1701275.
DOI Google Scholar
47

Agrawal, A. V.; Kaur, K.; Kumar, M. Interfacial study of vertically aligned n-type MoS2 flakes heterojunction with p-type Cu-Zn-Sn-S for self-powered, fast and high performance broadband photodetector. Appl. Surf. Sci. 2020, 514, 145901.
DOI Google Scholar
48

Liu, K. J.; Li, J.; Qi, H. Y.; Hambsch, M.; Rawle, J.; Vázquez, A. R.; Nia, A. S.; Pashkin, A.; Schneider, H.; Polozij, M. et al. A two-dimensional polyimide–graphene heterostructure with ultra-fast interlayer charge transfer. Angew. Chem., Int. Ed. 2021, 60, 13859–13864.
DOI Google Scholar
49

Luo, P.; Wang, F. K.; Qu, J. Y.; Liu, K. L.; Hu, X. Z.; Liu, K. W.; Zhai, T. Y. Self-driven WSe2/Bi2O2Se van der Waals heterostructure photodetectors with high light on/off ratio and fast response. Adv. Funct. Mater. 2021, 31, 2008351.
DOI Google Scholar
50

Liu, J.; Yang, F. X.; Cao, L. L.; Li, B. L.; Yuan, K.; Lei, S. B.; Hu, W. P. A robust nonvolatile resistive memory device based on a freestanding ultrathin 2D imine polymer film. Adv. Mater. 2019, 31, 1902264.
DOI Google Scholar
51

Song, X. F.; Liu, X. H.; Yu, D. J.; Huo, C. X.; Ji, J. P.; Li, X. M.; Zhang, S. L.; Zou, Y. S.; Zhu, G. Y.; Wang, Y. J. et al. Boosting two-dimensional MoS2/CsPbBr3 photodetectors via enhanced light absorbance and interfacial carrier separation. ACS Appl. Mater. Interfaces 2018, 10, 2801–2809.
DOI Google Scholar
52

Pak, S.; Jang, A. R.; Lee, J.; Hong, J.; Giraud, P.; Lee, S.; Cho, Y.; An, G. H.; Lee, Y. W.; Shin, H. S. et al. Surface functionalization-induced photoresponse characteristics of monolayer MoS2 for fast flexible photodetectors. Nanoscale 2019, 11, 4726–4734.
DOI Google Scholar
53

Peng, Z. Y.; Xu, J. L.; Zhang, J. Y.; Gao, X.; Wang, S. D. Solution-processed high-performance hybrid photodetectors enhanced by perovskite/MoS2 bulk heterojunction. Adv. Mater. Interfaces 2018, 5, 1800505.
DOI Google Scholar
54

Wen, Y.; Yin, L.; He, P.; Wang, Z. X.; Zhang, X. K.; Wang, Q. S.; Shifa, T. A.; Xu, K.; Wang, F. M.; Zhan, X. Y. et al. Integrated high-performance infrared phototransistor arrays composed of nonlayered PbS–MoS2 heterostructures with edge contacts. Nano Lett. 2016, 16, 6437–6444.
DOI Google Scholar
55

Ding, Y.; Zhou, N.; Gan, L.; Yan, X. X.; Wu, R. Z.; Abidi, I. H.; Waleed, A.; Pan, J.; Ou, X. W.; Zhang, Q. C. et al. Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors. Nano Energy 2018, 49, 200–208.
DOI Google Scholar
56

Pak, S.; Cho, Y.; Hong, J.; Lee, J.; Lee, S.; Hou, B.; An, G. H.; Lee, Y. W.; Jang, J. E.; Im, H. et al. Consecutive junction-induced efficient charge separation mechanisms for high-performance MoS2/quantum dot phototransistors. ACS Appl. Mater. Interfaces 2018, 10, 38264–38271.
DOI Google Scholar
57

Huo, N. J.; Konstantatos, G. Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 P–N homojunction. Nat. Commun. 2017, 8, 572.
DOI Google Scholar
58

Huang, Y.; Zhuge, F. W.; Hou, J. X.; Lv, L.; Luo, P.; Zhou, N.; Gan, L.; Zhai, T. Y. Van der Waals coupled organic molecules with monolayer MoS2 for fast response photodetectors with gate-tunable responsivity. ACS Nano 2018, 12, 4062–4073.
DOI Google Scholar
59

Furchi, M. M.; Polyushkin, D. K.; Pospischil, A.; Mueller, T. Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett. 2014, 14, 6165–6170.
DOI Google Scholar
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Acknowledgements

Publication history

Received: 25 January 2022
Revised: 19 March 2022
Accepted: 15 April 2022
Published: 15 June 2022
Issue date: September 2022

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© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 21872103 and 52073208).

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