Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing

Gang Cao; Chao Gao; Jingjuan Wang; Jinling Lan; Xiaobing Yan

doi:10.1007/s12274-022-4437-9

Nano Research 2022, 15(9): 8419-8427 https://doi.org/10.1007/s12274-022-4437-9

Research Article | Issue | Published: 10 June 2022

Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing

Show Author's Information Hide Author's Information Gang Cao, Chao Gao, Jingjuan Wang, Jinling Lan, Xiaobing Yan(

)

Key Laboratory of Brain-Like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, China

Keywords:

memristor, low power, information processing, titania nanosheets, multi-level storage

Topics:

Nanoelectronics

Cite this article:

Cao G, Gao C, Wang J, et al. Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing. Nano Research, 2022, 15(9): 8419-8427. https://doi.org/10.1007/s12274-022-4437-9

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Abstract Electronic supplementary material About this article

Abstract

A huge amount of data requires the non-volatile memory (NVM) technology to exhibit large-capacity storage and fast calculation speed. To further solve the bottleneck of storage capacity and speed, nano-memristors based on two-dimensional (2D) layered materials are expected to realize NVM. This study proposes the fabrication of an Ag/2D-TiO_x/Pt high-performance memristor device based on the 2D titania nanosheet material. The device demonstrates stable electrical characteristics under the direct current (DC) mode, including bipolar resistive switching (RS) behavior, multi-level memristive modes, and retention property. Also, it exhibits low switching voltage (0.42 V/–0.2 V), high R_OFF/R_ON resistance ratio (10⁵), low switching power (10^–9 W/10⁻⁵ W), and fast response speed. More importantly, the device realizes information encoding and decoding through a multi-level storage performed by different compliance currents. Multiple devices are connected to the actual circuit to realize a storage function with information processing and programmable characteristics. This work provides a powerful platform for the 2D titania nanosheet application in NVM and information processing.

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Acknowledgements

Publication history

Received: 12 January 2022

Revised: 12 April 2022

Accepted: 15 April 2022

Published: 10 June 2022

Issue date: September 2022

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Acknowledgements

This work was financially supported by the National Key R&D Program of China (No. 2021YFA1200502), Cultivation Projects of National Major R&D Project (No. 92164109), the National Natural Science Foundation of China (Nos. 61674050 and 61874158), Special Project of Strategic Leading Science and Technology of Chinese Academy of Sciences (No. XDB44000000-7), Hebei Basic Research Special Key Project (No. F2021201045), the Project of Distinguished Young of Hebei Province (No. A2018201231), the Support Program for the Top Young Talents of Hebei Province (No. 70280011807), the Hundred Persons Plan of Hebei Province (Nos. E2018050004 and E2018050003), the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (No. SLRC2019018), Outstanding Young Scientific Research and Innovation Team of Hebei University (No. 605020521001), Special Support Funds for National High Level Talents (No. 041500120001), High-level Talent Research Startup Project of Hebei University (No. 521000981426), Funded by Science and Technology Project of Hebei Education Department (Nos. QN2020178 and QN2021026), Interdisciplinary Key Research Program of Natural Science of Hebei University (No. DXK202101), Project of Institute of Life Sciences and Green Development (No. 521100311).