Nonpolar AlxGa1−xN/AlyGa1−yN multiple quantum wells on GaN nanowire for UV emission

Sonachand Adhikari; Olivier Lee Cheong Lem; Felipe Kremer; Kaushal Vora; Frank Brink; Mykhaylo Lysevych; Hark Hoe Tan; Chennupati Jagadish

doi:10.1007/s12274-022-4403-6

Nano Research 2022, 15(8): 7670-7680 https://doi.org/10.1007/s12274-022-4403-6

Research Article | Issue | Published: 31 May 2022

Nonpolar Al_xGa_1−xN/Al_yGa_1−yN multiple quantum wells on GaN nanowire for UV emission

Show Author's Information Hide Author's Information Sonachand Adhikari^{¹^,²}(

), Olivier Lee Cheong Lem^³, Felipe Kremer^⁴, Kaushal Vora^³, Frank Brink^⁴, Mykhaylo Lysevych^³, Hark Hoe Tan^{¹^,⁵}(

), Chennupati Jagadish^{¹^,⁵}

1 Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

2 Semiconductor Device Fabrication Group, CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

3 Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

4 Centre for Advanced Microscopy, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

5 Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Keywords:

nanowire, selective area growth, multiple quantum wells, metal organic chemical vapor deposition (MOCVD), nonpolar plane, AlGaN

Topics:

Semiconductor quantum wells

Cite this article:

Adhikari S, Lem OLC, Kremer F, et al. Nonpolar Al_xGa_1−xN/Al_yGa_1−yN multiple quantum wells on GaN nanowire for UV emission. Nano Research, 2022, 15(8): 7670-7680. https://doi.org/10.1007/s12274-022-4403-6

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Abstract Full text Electronic supplementary material About this article

Abstract

Nonpolar m-plane AlGaN offers the advantage of polarization-free multiple quantum wells (MQWs) for ultraviolet (UV) emission and can be achieved on the sidewalls of selective area grown GaN nanowires. We reveal that the growth of AlGaN on GaN nanowires by metal organic chemical vapor deposition (MOCVD) is driven by vapor-phase diffusion, and consequently puts a limit on the pitch of nanowire array due to shadowing effect. An insight into the difficulty of achieving metal-polar AlGaN nanowire by selective area growth (SAG) in MOCVD is also provided and can be attributed to the strong tendency to form pyramidal structure due to a very small growth rate of { $10 \bar{1} 1$ } semipolar planes compared to (0001) c-plane. The nonpolar m-plane sidewalls of GaN nanowires obtained via SAG provides an excellent platform for growth of nonpolar AlGaN MQWs. UV emission from m-plane Al_xGa_1−xN/Al_yGa_1−yN MQWs grown on sidewalls of dislocation-free GaN nanowire is demonstrated in the wavelength range of 318–343 nm.

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Nonpolar Al_xGa_1−xN/Al_yGa_1−yN multiple quantum wells on GaN nanowire for UV emission

Show Author's information Hide Author's Information Sonachand Adhikari^{¹^,²}(

), Olivier Lee Cheong Lem^³, Felipe Kremer^⁴, Kaushal Vora^³, Frank Brink^⁴, Mykhaylo Lysevych^³, Hark Hoe Tan^{¹^,⁵}(

), Chennupati Jagadish^{¹^,⁵}

1 Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

2 Semiconductor Device Fabrication Group, CSIR-Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

3 Australian National Fabrication Facility ACT Node, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

4 Centre for Advanced Microscopy, The Australian National University, Canberra, Australian Capital Territory 2601, Australia

Abstract

Keywords: nanowire, selective area growth, multiple quantum wells, metal organic chemical vapor deposition (MOCVD), nonpolar plane, AlGaN

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Publication history

Received: 22 February 2022

Revised: 06 April 2022

Accepted: 07 April 2022

Published: 31 May 2022

Issue date: August 2022

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Acknowledgements

We acknowledge the Australian Research Council for financial support. S. A. acknowledges Jennifer Wong-Leung for discussions. S. A. also acknowledges James Cotsell for providing training and access to Disco dicing machine. This work used the ACT node of the NCRIS-enabled Australian National Fabrication Facility (ANFF-ACT).