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Nano Research 2022, 15(8): 7081-7090 https://doi.org/10.1007/s12274-022-4384-5
Research Article | Issue | Published: 23 May 2022

Anomalous enhancement oxidation of few-layer MoS2 and MoS2/h-BN heterostructure

Show Author's Information Siming Ren1( ),  Yanbin Shi1,  Chaozhi Zhang1,  Mingjun Cui2,  Jibin Pu1( )
Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Key Laboratory of Impact and Safety Engineering, Ministry of Education of China, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo 315211, China
Keywords:
molybdenum disulfide, heterostructure, hexagonal boron nitride, tensile strain, enhancement oxidation
Topics:
Catalytic oxidation
Cite this article:
Ren S, Shi Y, Zhang C, et al. Anomalous enhancement oxidation of few-layer MoS2 and MoS2/h-BN heterostructure. Nano Research, 2022, 15(8): 7081-7090. https://doi.org/10.1007/s12274-022-4384-5
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Abstract Full text Electronic supplementary material About this article

Because of profound applications of two-dimensional molybdenum disulfide (MoS2) and its heterostructures in electronics, its thermal stability has been spurred substantial interest. We employ a precision muffle furnace at a series of increasing temperatures up to 340 °C to study the oxidation behavior of continuous MoS2 films by either directly growing mono- and few-layer MoS2 on SiO2/Si substrate, or by mechanically transferring monolayer MoS2 or hexagonal boron nitride (h-BN) onto monolayer MoS2 substrate. Results show that monolayer MoS2 can withstand high temperature at 340 °C with less oxidation while the few-layer MoS2 films are completely oxidized just at 280 °C, resulting from the growth-induced tensile strain in few-layer MoS2. When the tensile strain of films is released by transfer method, the stacked few-layer MoS2 films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature. Counterintuitively, for the MoS2/h-BN heterostructure, the h-BN film itself stacked on top is not damaged and forms many bubbles at 340 °C, whereas the underlying monolayer MoS2 film is oxidized completely. By comprehensively using various experimental characterization and molecular dynamics calculations, such anomalous oxidation behavior of MoS2/h-BN heterostructure is mainly due to the increased tensile strain in MoS2 film at elevated temperature.


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Electronic supplementary material
About this article

Anomalous enhancement oxidation of few-layer MoS2 and MoS2/h-BN heterostructure

Show Author's information Siming Ren1( ), Yanbin Shi1, Chaozhi Zhang1, Mingjun Cui2, Jibin Pu1( )
Key Laboratory of Marine Materials and Related Technologies, Zhejiang Key Laboratory of Marine Materials and Protective Technologies, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Key Laboratory of Impact and Safety Engineering, Ministry of Education of China, School of Mechanical Engineering and Mechanics, Ningbo University, Ningbo 315211, China

Abstract

Because of profound applications of two-dimensional molybdenum disulfide (MoS2) and its heterostructures in electronics, its thermal stability has been spurred substantial interest. We employ a precision muffle furnace at a series of increasing temperatures up to 340 °C to study the oxidation behavior of continuous MoS2 films by either directly growing mono- and few-layer MoS2 on SiO2/Si substrate, or by mechanically transferring monolayer MoS2 or hexagonal boron nitride (h-BN) onto monolayer MoS2 substrate. Results show that monolayer MoS2 can withstand high temperature at 340 °C with less oxidation while the few-layer MoS2 films are completely oxidized just at 280 °C, resulting from the growth-induced tensile strain in few-layer MoS2. When the tensile strain of films is released by transfer method, the stacked few-layer MoS2 films exhibit superior thermal stability and typical layer-by-layer oxidation behavior at similarly high temperature. Counterintuitively, for the MoS2/h-BN heterostructure, the h-BN film itself stacked on top is not damaged and forms many bubbles at 340 °C, whereas the underlying monolayer MoS2 film is oxidized completely. By comprehensively using various experimental characterization and molecular dynamics calculations, such anomalous oxidation behavior of MoS2/h-BN heterostructure is mainly due to the increased tensile strain in MoS2 film at elevated temperature.

Keywords: molybdenum disulfide, heterostructure, hexagonal boron nitride, tensile strain, enhancement oxidation

References(55)

1

Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147–150.
DOI Google Scholar
2

Sangwan, V. K.; Lee, H. S.; Bergeron, H.; Balla, I.; Beck, M. E.; Chen, K. S.; Hersam, M. C. Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide. Nature 2018, 554, 500–504.
DOI Google Scholar
3

Wang, Q. H.; Kalantar-Zadeh, K.; Kis, A.; Coleman, J. N.; Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699–712.
DOI Google Scholar
4

Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
DOI Google Scholar
5

Qiu, H.; Pan, L. J.; Yao, Z. N.; Li, J. J.; Shi, Y.; Wang, X. R. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 2012, 100, 123104.
DOI Google Scholar
6

Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831–2836.
DOI Google Scholar
7

Lee, G. H.; Yu, Y. J.; Cui, X.; Petrone, N.; Lee, C. H.; Choi, M. S.; Lee, D. Y.; Lee, C.; Yoo, W. J.; Watanabe, K. et al. Flexible and transparent MoS2 field-effect transistors on hexagonal boron nitride–graphene heterostructures. ACS Nano 2013, 7, 7931–7936.
DOI Google Scholar
8

Budania, P.; Baine, P.; Montgomery, J.; McGeough, C.; Cafolla, T.; Modreanu, M.; McNeill, D.; Mitchell, N.; Hughes, G.; Hurley, P. Long-term stability of mechanically exfoliated MoS2 flakes. MRS Commun. 2017, 7, 813–818.
DOI Google Scholar
9

Femi-Oyetoro, J.; Yao, K.; Hathaway, E.; Jiang, Y.; Ojo, I.; Squires, B.; Neogi, A.; Cui, J. B.; Philipose, U.; Gadiyaram, N. K. et al. Structural stability of bilayer MoS2 in ambient air. Adv. Mater. Interfaces 2021, 8, 2101188.
DOI Google Scholar
10

Yalon, E.; McClellan, C. J.; Smithe, K. K. H.; Rojo, M. M.; Xu, R. L.; Suryavanshi, S. V.; Gabourie, A. J.; Neumann, C. M.; Xiong, F.; Farimani, A. B. et al. Energy dissipation in monolayer MoS2 electronics. Nano Lett. 2017, 17, 3429–3433.
DOI Google Scholar
11

Park, S.; Garcia-Esparza, A. T.; Abroshan, H.; Abraham, B.; Vinson, J.; Gallo, A.; Nordlund, D.; Park, J.; Kim, T. R.; Vallez, L. et al. Operando study of thermal oxidation of monolayer MoS2. Adv. Sci. 2021, 8, 2002768.
DOI Google Scholar
12

Lu, X.; Utama, M. I. B.; Zhang, J.; Zhao, Y. Y.; Xiong, Q. H. Layer-by-layer thinning of MoS2 by thermal annealing. Nanoscale 2013, 5, 8904–8908.
DOI Google Scholar
13

Wu, J.; Li, H.; Yin, Z. Y.; Li, H.; Liu, J. Q.; Cao, X. H.; Zhang, Q.; Zhang, H. Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air. Small 2013, 9, 3314–3319.
DOI Google Scholar
14

Yoon, A.; Kim, J. H.; Yoon, J.; Lee, Y.; Lee, Z. van der Waals epitaxial formation of atomic layered α-MoO3 on MoS2 by oxidation. ACS Appl. Mater. Interfaces 2020, 12, 22029–22036.
DOI Google Scholar
15

Lin, Y. K.; Chen, R. S.; Chou, T. C.; Lee, Y. H.; Chen, Y. F.; Chen, K. H.; Chen, L. C. Thickness-dependent binding energy shift in few-layer MoS2 grown by chemical vapor deposition. ACS Appl. Mater. Interfaces 2016, 8, 22637–22646.
DOI Google Scholar
16

Zhou, H. Q.; Yu, F.; Liu, Y. Y.; Zou, X. L.; Cong, C. X.; Qiu, C. Y.; Yu, T.; Yan, Z.; Shen, X. N.; Sun, L. F. et al. Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air. Nano Res. 2013, 6, 703–711.
DOI Google Scholar
17

Spychalski, W. L.; Pisarek, M.; Szoszkiewicz, R. Microscale insight into oxidation of single MoS2 crystals in air. J. Phys. Chem. C 2017, 121, 26027–26033.
DOI Google Scholar
18

Yamamoto, M.; Einstein, T. L.; Fuhrer, M. S.; Cullen, W. G. Anisotropic etching of atomically thin MoS2. J. Phys. Chem. C 2013, 117, 25643–25649.
DOI Google Scholar
19

Ryu, Y.; Kim, W.; Koo, S.; Kang, H.; Watanabe, K.; Taniguchi, T.; Ryu, S. Interface-confined doubly anisotropic oxidation of two-dimensional MoS2. Nano Lett. 2017, 17, 7267–7273.
DOI Google Scholar
20

Lee, Y. H.; Zhang, X. Q.; Zhang, W. J.; Chang, M. T.; Lin, C. T.; Chang, K. D.; Yu, Y. C.; Wang, J. T. W.; Chang, C. S.; Li, L. J. et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 2012, 24, 2320–2325.
DOI Google Scholar
21

Ly, T. H.; Chiu, M. H.; Li, M. Y.; Zhao, J.; Perello, D. J.; Cichocka, M. O.; Oh, H. M.; Chae, S. H.; Jeong, H. Y.; Yao, F. et al. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides. ACS Nano 2014, 8, 11401–11408.
DOI Google Scholar
22

Gao, J.; Li, B. C.; Tan, J. W.; Chow, P.; Lu, T. M.; Koratkar, N. Aging of transition metal dichalcogenide monolayers. ACS Nano 2016, 10, 2628–2635.
DOI Google Scholar
23

Ionescu, R.; George, A.; Ruiz, I.; Favors, Z.; Mutlu, Z.; Liu, C.; Ahmed, K.; Wu, R.; Jeong, J. S.; Zavala, L. et al. Oxygen etching of thick MoS2 films. Chem. Commun. 2014, 50, 11226–11229.
DOI Google Scholar
24

Lee, G. H.; Cui, X.; Kim, Y. D.; Arefe, G.; Zhang, X.; Lee, C. H.; Ye, F.; Watanabe, K.; Taniguchi, T.; Kim, P. et al. Highly stable, dual-gated MoS2 transistors encapsulated by hexagonal boron nitride with gate-controllable contact, resistance, and threshold voltage. ACS Nano 2015, 9, 7019–7026.
DOI Google Scholar
25

Yao, K.; Femi-Oyetoro, J. D.; Yao, S.; Jiang, Y.; El Bouanani, L.; Jones, D. C.; Ecton, P. A.; Philipose, U.; El Bouanani, M.; Rout, B. et al. Rapid ambient degradation of monolayer MoS2 after heating in air. 2D Mater. 2020, 7, 015024.
DOI Google Scholar
26

Şar, H.; Özden, A.; Demiroğlu, İ.; Sevik, C.; Perkgoz, N. K.; Ay, F. Long-term stability control of CVD-grown monolayer MoS2. Phys. Status Solidi RRL 2019, 13, 1800687.
DOI Google Scholar
27

Rao, R.; Islam, A. E.; Campbell, P. M.; Vogel, E. M.; Maruyama, B. In situ thermal oxidation kinetics in few layer MoS2. 2D Mater. 2017, 4, 025058.
DOI Google Scholar
28

Lin, T. Z.; Kang, B. T.; Jeon, M.; Huffman, C.; Jeon, J.; Lee, S.; Han, W.; Lee, J.; Lee, S.; Yeom, G. et al. Controlled layer-by-layer etching of MoS2. ACS Appl. Mater. Interfaces 2015, 7, 15892–15897.
DOI Google Scholar
29

Ren, S. M.; Cui, M. J.; Pu, J. B.; Xue, Q. J.; Wang, L. P. Multilayer regulation of atomic boron nitride films to improve oxidation and corrosion resistance of Cu. ACS Appl. Mater. Interfaces 2017, 9, 27152–27165.
DOI Google Scholar
30

Dumcenco, D.; Ovchinnikov, D.; Marinov, K.; Lazić, P.; Gibertini, M.; Marzari, N.; Sanchez, O. L.; Kung, Y. C.; Krasnozhon, D.; Chen, M. W. et al. Large-area epitaxial monolayer MoS2. ACS Nano 2015, 9, 4611–4620.
DOI Google Scholar
31

Liang, T.; Phillpot, S. R.; Sinnott, S. B. Parametrization of a reactive many-body potential for Mo–S systems. Phys. Rev. B 2009, 79, 245110.
DOI Google Scholar
32

Kınacı, A.; Haskins, J. B.; Sevik, C. Çağın, T. Thermal conductivity of BN-C nanostructures. Phys. Rev. B 2012, 86, 115410.
DOI Google Scholar
33

Dong, X.; Yan, C.; Tomer, D.; Li, C. H.; Li, L. Spiral growth of few-layer MoS2 by chemical vapor deposition. Appl. Phys. Lett. 2016, 109, 051604.
DOI Google Scholar
34

Wang, S. S.; Rong, Y. M.; Fan, Y.; Pacios, M.; Bhaskaran, H.; He, K.; Warner, J. H. Shape evolution of monolayer MoS2 crystals grown by chemical vapor deposition. Chem. Mater. 2014, 26, 6371–6379.
DOI Google Scholar
35

Lee, C.; Yan, H.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 2010, 4, 2695–2700.
DOI Google Scholar
36

Peña, T.; Chowdhury, S. A.; Azizimanesh, A.; Sewaket, A.; Askari, H.; Wu, S. M. Strain engineering 2D MoS2 with thin film stress capping layers. 2D Mater. 2021, 8, 045001.
DOI Google Scholar
37

Ren, S. M.; Li, H.; Cui, M. J.; Wang, L. P.; Pu, J. B. Functional regulation of Pb-Ti/MoS2 composite coatings for environmentally adaptive solid lubrication. Appl. Surf. Sci. 2017, 401, 362–372.
DOI Google Scholar
38

Lanzillo, N. A.; Birdwell, A. G.; Amani, M.; Crowne, F. J.; Shah, P. B.; Najmaei, S.; Liu, Z.; Ajayan, P. M.; Lou, J.; Dubey, M. et al. Temperature-dependent phonon shifts in monolayer MoS2. Appl. Phys. Lett. 2013, 103, 093102.
DOI Google Scholar
39

Panasci, S. E.; Schilirò, E.; Greco, G.; Cannas, M.; Gelardi, F. M.; Agnello, S.; Roccaforte, F.; Giannazzo, F. Strain, doping, and electronic transport of large area monolayer MoS2 exfoliated on gold and transferred to an insulating substrate. ACS Appl. Mater. Interfaces 2021, 13, 31248–31259.
DOI Google Scholar
40

Lloyd, D.; Liu, X. H.; Christopher, J. W.; Cantley, L.; Wadehra, A.; Kim, B. L.; Goldberg, B. B.; Swan, A. K.; Bunch, J. S. Band gap engineering with ultralarge biaxial strains in suspended monolayer MoS2. Nano Lett. 2016, 16, 5836–5841.
DOI Google Scholar
41

Sarkar, S.; Maity, I.; Pradeepa, H. L.; Nayak, G.; Marty, L.; Renard, J.; Coraux, J.; Bendiab, N.; Bouchiat, V.; Das, S. et al. Anharmonicity in Raman-active phonon modes in atomically thin MoS2. Phys. Rev. B 2020, 101, 205302.
DOI Google Scholar
42

Sahoo, S.; Gaur, A. P. S.; Ahmadi, M.; Guinel, M. J. F.; Katiyar, R. S. Temperature-dependent Raman studies and thermal conductivity of few-layer MoS2. J. Phys. Chem. C 2013, 117, 9042–9047.
DOI Google Scholar
43

Hou, C.; Deng, J. W.; Guan, J. X.; Yang, Q. R.; Yu, Z. H.; Lu, Y. L.; Xu, Z. H.; Yao, Z. F.; Zheng, J. R. Photoluminescence of monolayer MoS2 modulated by water/O2/laser irradiation. Phys. Chem. Chem. Phys. 2021, 23, 24579–24588.
DOI Google Scholar
44

Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; Van Der Zant, H. S. J.; Steele, G. A. Laser-thinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187–3192.
DOI Google Scholar
45

Hussain, S.; Xu, R.; Xu, K. Q.; Lei, L.; Meng, L.; Zheng, Z. Y.; Xing, S. Y.; Guo, J. F.; Dong, H. Y.; Liaqat, A. et al. Strain-induced hierarchical ripples in MoS2 layers investigated by atomic force microscopy. Appl. Phys. Lett. 2020, 117, 153102.
DOI Google Scholar
46

Liu, Z.; Amani, M.; Najmaei, S.; Xu, Q.; Zou, X. L.; Zhou, W.; Yu, T.; Qiu, C. Y.; Birdwell, A. G.; Crowne, F. J. et al. Strain and structure heterogeneity in MoS2 atomic layers grown by chemical vapour deposition. Nat. Commun. 2014, 5, 5246.
DOI Google Scholar
47

Sim, D. M.; Kim, M.; Yim, S.; Choi, M. J.; Choi, J.; Yoo, S.; Jung, Y. S. Controlled doping of vacancy-containing few-layer MoS2 via highly stable thiol-based molecular chemisorption. ACS Nano 2015, 9, 12115–12123.
DOI Google Scholar
48

Zabel, J.; Nair, R. R.; Ott, A.; Georgiou, T.; Geim, A. K.; Novoselov, K. S.; Casiraghi, C. Raman spectroscopy of graphene and bilayer under biaxial strain: Bubbles and balloons. Nano Lett. 2012, 12, 617–621.
DOI Google Scholar
49

Roy, S. S.; Arnold, M. S. Improving graphene diffusion barriers via stacking multiple layers and grain size engineering. Adv. Funct. Mater. 2013, 23, 3638–3644.
DOI Google Scholar
50

Liu, Z.; Gong, Y. J.; Zhou, W.; Ma, L. L.; Yu, J. J.; Idrobo, J. C.; Jung, J.; MacDonald, A. H.; Vajtai, R.; Lou, J. et al. Ultrathin high-temperature oxidation-resistant coatings of hexagonal boron nitride. Nat. Commun. 2013, 4, 2541.
DOI Google Scholar
51

Dai, Z. Y.; Wang, Z. W.; He, X.; Zhang, X. X.; Alshareef, H. N. Large-area chemical vapor deposited MoS2 with transparent conducting oxide contacts toward fully transparent 2D electronics. Adv. Funct. Mater. 2017, 27, 1703119.
DOI Google Scholar
52

Yan, A. M.; Velasco, J. Jr.; Kahn, S.; Watanabe, K.; Taniguchi, T.; Wang, F.; Crommie, M. F.; Zettl, A. Direct growth of single- and few-layer MoS2 on h-BN with preferred relative rotation angles. Nano Lett. 2015, 15, 6324–6331.
DOI Google Scholar
53

Sevik, C. Assessment on lattice thermal properties of two-dimensional honeycomb structures: Graphene, h-BN, h-MoS2, and h-MoSe2. Phys. Rev. B 2014, 89, 035422.
DOI Google Scholar
54

Castellanos-Gomez, A.; Roldán, R.; Cappelluti, E.; Buscema, M.; Guinea, F.; Van Der Zant, H. S. J.; Steele, G. A. Local strain engineering in atomically thin MoS2. Nano Lett. 2013, 13, 5361–5366.
DOI Google Scholar
55

Guo, Y.; Li, B.; Huang, Y.; Du, S.; Sun, C.; Luo, H. L.; Liu, B. L.; Zhou, X. J.; Yang, J. L.; Li, J. J. et al. Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles. Nano Res. 2020, 13, 2072–2078.
DOI Google Scholar
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Publication history
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Acknowledgements

Publication history

Received: 20 January 2022
Revised: 15 March 2022
Accepted: 01 April 2022
Published: 23 May 2022
Issue date: August 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 52005489), Ningbo 3315 Innovation Team (No. 2020A-03-C), the China Postdoctoral Science Fund (Nos. 2021T140685 and 2019M662126), and the Natural Science Foundation of Zhejiang Province (No. LR20E050001).

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