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Nano Research 2022, 15(11): 9683-9688 https://doi.org/10.1007/s12274-022-4347-x
Research Article | Issue | Published: 29 April 2022

Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach

Show Author's Information Kaicheng Jia1,2,§,  Ziteng Ma1,2,§,  Wendong Wang3,§,  Yongliang Wen4,§,  Huanxin Li4,5,  Yeshu Zhu1,2,6,  Jiawei Yang7,  Yuqing Song1,2,  Jiaxin Shao1,2,6,  Xiaoting Liu1,2,6,  Qi Lu2,8,  Yixuan Zhao1,2,  Jianbo Yin2,  Luzhao Sun2,  Hailin Peng1,2,  Jincan Zhang2,5( ),  Li Lin9( ),  Zhongfan Liu1,2( )
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Beijing Graphene Institute, Beijing 100095, China
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Electronic Science and Technology, Faculty of Information Technology, Beijing University of Technology, Beijing 100024, China
State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, China
School of Materials Science and Engineering, Peking University, Beijing 100871, China

§ Kaicheng Jia, Ziteng Ma, Wendong Wang, and Yongliang Wen contributed equally to this work.

Keywords:
graphene, defects, cold-wall chemical vapor deposition (CVD), electrical performance
Topics:
Graphene
Cite this article:
Jia K, Ma Z, Wang W, et al. Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach. Nano Research, 2022, 15(11): 9683-9688. https://doi.org/10.1007/s12274-022-4347-x
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Abstract Full text Electronic supplementary material About this article

Chemical vapor deposition (CVD) has emerged as a promising approach for the controlled growth of graphene films with appealing scalability, controllability, and uniformity. However, the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system. In contrast, owing to the different heating mode, cold-wall CVD (CW-CVD) system exhibits promising potential for the industrial-scale production, but the quality of as-received graphene remains inferior with limited domain size and high defect density. Herein, we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system. With reduced defect density and improved properties, the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application. This study provides a new insight into the quality improvement of graphene derived from CW-CVD system, and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.


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Electronic supplementary material
About this article

Toward batch synthesis of high-quality graphene by cold-wall chemical vapor deposition approach

Show Author's information Kaicheng Jia1,2,§, Ziteng Ma1,2,§, Wendong Wang3,§, Yongliang Wen4,§, Huanxin Li4,5, Yeshu Zhu1,2,6, Jiawei Yang7, Yuqing Song1,2, Jiaxin Shao1,2,6, Xiaoting Liu1,2,6, Qi Lu2,8, Yixuan Zhao1,2, Jianbo Yin2, Luzhao Sun2, Hailin Peng1,2, Jincan Zhang2,5( ), Li Lin9( ), Zhongfan Liu1,2( )
Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Science, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Beijing Graphene Institute, Beijing 100095, China
School of Physics and Astronomy, University of Manchester, Manchester M13 9PL, UK
State Key Laboratory for Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, China
Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK
Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
Key Laboratory of Opto-Electronics Technology, Ministry of Education, College of Electronic Science and Technology, Faculty of Information Technology, Beijing University of Technology, Beijing 100024, China
State Key Laboratory of Heavy Oil Processing, College of Science, China University of Petroleum, Beijing 102249, China
School of Materials Science and Engineering, Peking University, Beijing 100871, China

§ Kaicheng Jia, Ziteng Ma, Wendong Wang, and Yongliang Wen contributed equally to this work.

Abstract

Chemical vapor deposition (CVD) has emerged as a promising approach for the controlled growth of graphene films with appealing scalability, controllability, and uniformity. However, the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system. In contrast, owing to the different heating mode, cold-wall CVD (CW-CVD) system exhibits promising potential for the industrial-scale production, but the quality of as-received graphene remains inferior with limited domain size and high defect density. Herein, we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system. With reduced defect density and improved properties, the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application. This study provides a new insight into the quality improvement of graphene derived from CW-CVD system, and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.

Keywords: graphene, defects, cold-wall chemical vapor deposition (CVD), electrical performance

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Publication history
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Acknowledgements

Publication history

Received: 20 December 2021
Revised: 21 March 2022
Accepted: 22 March 2022
Published: 29 April 2022
Issue date: November 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. T2188101, 21525310, and 52072042), the National Key R&D Program of China (No. 2018YFA0703502), Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXTD-202001), and Beijing Municipal Science & Technology Commission (Nos. Z181100004818001, Z18110300480001, Z18110300480002, Z191100000819005, Z191100000819007, and Z201100008720005).

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