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Chemical vapor deposition (CVD) has emerged as a promising approach for the controlled growth of graphene films with appealing scalability, controllability, and uniformity. However, the synthesis of high-quality graphene films still suffers from low production capacity and high energy consumption in the conventional hot-wall CVD system. In contrast, owing to the different heating mode, cold-wall CVD (CW-CVD) system exhibits promising potential for the industrial-scale production, but the quality of as-received graphene remains inferior with limited domain size and high defect density. Herein, we demonstrated an efficient method for the batch synthesis of high-quality graphene films with millimeter-sized domains based on CW-CVD system. With reduced defect density and improved properties, the as-received graphene was proven to be promising candidate material for electronics and anti-corrosion application. This study provides a new insight into the quality improvement of graphene derived from CW-CVD system, and paves a new avenue for the industrial production of high-quality graphene films for potential commercial applications.

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Publication history

Received: 20 December 2021
Revised: 21 March 2022
Accepted: 22 March 2022
Published: 29 April 2022
Issue date: November 2022

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© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. T2188101, 21525310, and 52072042), the National Key R&D Program of China (No. 2018YFA0703502), Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXTD-202001), and Beijing Municipal Science & Technology Commission (Nos. Z181100004818001, Z18110300480001, Z18110300480002, Z191100000819005, Z191100000819007, and Z201100008720005).

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Email: nanores@tup.tsinghua.edu.cn

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