High-performance solar-blind photodetector arrays constructed from Sn-doped Ga₂O₃ microwires via patterned electrodes

Ga₂O₃ has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga₂O₃ MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga₂O₃ MWs, possessing a light/dark current ratio of 10⁷ and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga₂O₃ MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga₂O₃ MWs, and thus may push forward their future applications.