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Research Article

High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes

Ya-Cong Lu1,§Zhen-Feng Zhang1,§Xun Yang1( )Gao-Hang He2Chao-Nan Lin1Xue-Xia Chen1Jin-Hao Zang1Wen-Bo Zhao1Yan-Cheng Chen1Lei-Lei Zhang1Yi-Zhe Li1Chong-Xin Shan1( )
Henan Key Laboratory of Diamond Optoelectronic Material and Devices, Key Laboratory of Material physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, China

§ Ya-Cong Lu and Zhen-Feng Zhang contributed equally to this work.

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Graphical Abstract

High-performance solar-blind photodetectors are fabricated from Sn-doped Ga2O3 microwires, which show a light/dark current ratio as high as 107 and a responsivity of 2,409 A/W. Moreover, photodetector arrays are developed based on the Sn-doped Ga2O3 microwires via a patterned-electrodes method and used for solar-blind imaging. This work provides a convenient way to construct high-performance solar-blind photodetector arrays.

Abstract

Ga2O3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga2O3 MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga2O3 MWs, possessing a light/dark current ratio of 107 and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga2O3 MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga2O3 MWs, and thus may push forward their future applications.

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Nano Research
Pages 7631-7638
Cite this article:
Lu Y-C, Zhang Z-F, Yang X, et al. High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes. Nano Research, 2022, 15(8): 7631-7638. https://doi.org/10.1007/s12274-022-4341-3
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Received: 22 January 2021
Revised: 11 March 2021
Accepted: 18 March 2021
Published: 19 May 2022
© Tsinghua University Press 2022
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