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Nano Research 2022, 15(7): 6601-6606 https://doi.org/10.1007/s12274-022-4317-3
Research Article | Issue | Published: 04 May 2022

Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5

Show Author's Information Yue Su1,2,§,  Chuyun Deng2,§,  Jinxin Liu1,2,  Xiaoming Zheng1,2,  Yuehua Wei3,  Yangbo Chen1,  Wei Yu6,  Xiao Guo5,  Weiwei Cai1,4,  Gang Peng2,  Han Huang5,  Xueao Zhang1,4( )
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
Jiujiang Research Institute of Xiamen University, Jiujiang 332105, China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

§ Yue Su and Chuyun Deng contributed equally to this work.

Keywords:
energy dissipation, anisotropic thermal conductivity, ternary transition metal chalcogenide, Ta2NiS5, phonon mode
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Su Y, Deng C, Liu J, et al. Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5. Nano Research, 2022, 15(7): 6601-6606. https://doi.org/10.1007/s12274-022-4317-3
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Abstract Full text Electronic supplementary material About this article

Energy dissipation has always been an attention-getting issue in modern electronics and the emerging low-symmetry two-dimensional (2D) materials are considered to have broad prospects in solving the energy dissipation problem. Herein the thermal transport of a typical 2D ternary chalcogenide Ta2NiS5 is investigated. For the first time we have observed strongly anisotropic in-plane thermal conductivity towards armchair and zigzag axes of suspended few-layer Ta2NiS5 flakes through Raman thermometry. For 7-nm-thick Ta2NiS5 flakes, the κzigzag is 4.76 W·m−1·K−1 and κarmchair is 7.79 W·m−1·K−1, with a large anisotropic ratio ( κarmchair/κzigzag) of 1.64 mainly ascribed to different phonon mean-free-paths along armchair and zigzag axes. Moreover, the thickness dependence of thermal anisotropy is also discussed. As the flake thickness increases, the κarmchair/κzigzag reduces sharply from 1.64 to 1.07. This could be attributed to the diversity in phonon boundary scattering, which decreases faster in zigzag direction than in armchair direction. Such anisotropic property enables heat flow manipulation in Ta2NiS5 based devices to improve thermal management and device performance. Our work helps reveal the anisotropy physics of ternary transition metal chalcogenides, along with significant guidance to develop energy-efficient next generation nanodevices.


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Electronic supplementary material
About this article

Highly in-plane anisotropy of thermal transport in suspended ternary chalcogenide Ta2NiS5

Show Author's information Yue Su1,2,§, Chuyun Deng2,§, Jinxin Liu1,2, Xiaoming Zheng1,2, Yuehua Wei3, Yangbo Chen1, Wei Yu6, Xiao Guo5, Weiwei Cai1,4, Gang Peng2, Han Huang5, Xueao Zhang1,4( )
College of Physical Science and Technology, Xiamen University, Xiamen 361005, China
College of Arts and Sciences, National University of Defense Technology, Changsha 410073, China
College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China
Jiujiang Research Institute of Xiamen University, Jiujiang 332105, China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, China
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

§ Yue Su and Chuyun Deng contributed equally to this work.

Abstract

Energy dissipation has always been an attention-getting issue in modern electronics and the emerging low-symmetry two-dimensional (2D) materials are considered to have broad prospects in solving the energy dissipation problem. Herein the thermal transport of a typical 2D ternary chalcogenide Ta2NiS5 is investigated. For the first time we have observed strongly anisotropic in-plane thermal conductivity towards armchair and zigzag axes of suspended few-layer Ta2NiS5 flakes through Raman thermometry. For 7-nm-thick Ta2NiS5 flakes, the κzigzag is 4.76 W·m−1·K−1 and κarmchair is 7.79 W·m−1·K−1, with a large anisotropic ratio ( κarmchair/κzigzag) of 1.64 mainly ascribed to different phonon mean-free-paths along armchair and zigzag axes. Moreover, the thickness dependence of thermal anisotropy is also discussed. As the flake thickness increases, the κarmchair/κzigzag reduces sharply from 1.64 to 1.07. This could be attributed to the diversity in phonon boundary scattering, which decreases faster in zigzag direction than in armchair direction. Such anisotropic property enables heat flow manipulation in Ta2NiS5 based devices to improve thermal management and device performance. Our work helps reveal the anisotropy physics of ternary transition metal chalcogenides, along with significant guidance to develop energy-efficient next generation nanodevices.

Keywords: energy dissipation, anisotropic thermal conductivity, ternary transition metal chalcogenide, Ta2NiS5, phonon mode

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Publication history
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Acknowledgements

Publication history

Received: 04 December 2021
Revised: 01 February 2022
Accepted: 11 March 2022
Published: 04 May 2022
Issue date: July 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC, Nos. 11874423 and 11404399), the National Defense Science and Technology Innovation Zone, and the Scientific Researches Foundation of National University of Defense Technology (Nos. ZK20-16 and ZZKY-YX-08-06).

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