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Recently, group-IVB semiconducting transition metal dichalcogenides (TMDs) of ZrS2 have attracted significant research interest due to its layered nature, moderate band gap, and extraordinary physical properties. Most device applications require a deposition of high quality large-area uniform ZrS2 single crystalline films, which has not yet been achieved. In this work, for the first time, we demonstrate the epitaxial growth of high quality large-area uniform ZrS2 films on c-plane sapphire substrates by chemical vapor deposition. An atomically sharp interface is observed due to the supercell matching between ZrS2 and sapphire, and their epitaxial relationship is found to be ZrS2 (0001)[
This work was financially supported by the National Natural Science Foundation of China (No. 61874106) and the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB43000000).