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Nano Research 2022, 15(7): 6620-6627 https://doi.org/10.1007/s12274-022-4280-z
Research Article | Issue | Published: 05 May 2022

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Show Author's Information Xiaojiao Guo1,  Honglei Chen1,  Jihong Bian1,  Fuyou Liao2,  Jingyi Ma1,  Simeng Zhang1,  Xinzhi Zhang3,  Junqiang Zhu4,  Chen Luo5,  Zijian Zhang5,  Lingyi Zong1,  Yin Xia1,  Chuming Sheng1,  Zihan Xu6,  Saifei Gou1,  Xinyu Wang1,  Peng Gong7,  Liwei Liu1,  Xixi Jiang1,  Zhenghua An3,  Chunxiao Cong4,  Zhijun Qiu4,  Xing Wu5,  Peng Zhou1,  Xinyu Chen1( ),  Ling Tong1( ),  Wenzhong Bao1( )
State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, China
State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Shenzhen Six Carbon Technology, Shenzhen 518055, China
Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China
Keywords:
field-effect transistors, two-dimensional semiconductor, interlayer coupling, chemical vapor deposition (CVD) synthesis, vacuum transfer method, dual-gate transistor
Topics:
Semiconductors
Cite this article:
Guo X, Chen H, Bian J, et al. Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors. Nano Research, 2022, 15(7): 6620-6627. https://doi.org/10.1007/s12274-022-4280-z
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Abstract Full text Electronic supplementary material About this article

In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300–1,000 nm) than that of 1L-MoS2. Additionally, the dual-gate ML-MoS2 transistors enable enhanced electrostatic control over the stacked ML-MoS2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.


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Abstract
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Electronic supplementary material
About this article

Stacking monolayers at will: A scalable device optimization strategy for two-dimensional semiconductors

Show Author's information Xiaojiao Guo1, Honglei Chen1, Jihong Bian1, Fuyou Liao2, Jingyi Ma1, Simeng Zhang1, Xinzhi Zhang3, Junqiang Zhu4, Chen Luo5, Zijian Zhang5, Lingyi Zong1, Yin Xia1, Chuming Sheng1, Zihan Xu6, Saifei Gou1, Xinyu Wang1, Peng Gong7, Liwei Liu1, Xixi Jiang1, Zhenghua An3, Chunxiao Cong4, Zhijun Qiu4, Xing Wu5, Peng Zhou1, Xinyu Chen1( ), Ling Tong1( ), Wenzhong Bao1( )
State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 200433, China
The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518057, China
Department of Physics, State Key Laboratory of Surface Physics, Institute of Nanoelectronic Devices and Quantum Computing and Key Laboratory of Micro, Fudan University, Shanghai 200433, China
State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
Shanghai Key Laboratory of Multidimensional Information Processing Department of Electronic Engineering, East China Normal University, Shanghai 200241, China
Shenzhen Six Carbon Technology, Shenzhen 518055, China
Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China

Abstract

In comparison to monolayer (1L), multilayer (ML) two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) exhibit more application potential for electronic and optoelectronic devices due to their improved current carrying capability, higher mobility, and broader spectral response. However, the investigation of devices based on wafer-scale ML-TMDs is still restricted by the synthesis of uniform and high-quality ML films. In this work, we propose a strategy of stacking MoS2 monolayers via a vacuum transfer method, by which one could obtain wafer-scale high-quality MoS2 films with the desired number of layers at will. The optical characteristics of these stacked ML-MoS2 films (> 2L) indicate a weak interlayer coupling. The stacked ML-MoS2 phototransistors show improved optoelectrical performances and a broader spectral response (approximately 300–1,000 nm) than that of 1L-MoS2. Additionally, the dual-gate ML-MoS2 transistors enable enhanced electrostatic control over the stacked ML-MoS2 channel, and the 3L and 4L thicknesses exhibit the optimal device performances according to the turning point of the current on/off ratio and the subthreshold swing.

Keywords: field-effect transistors, two-dimensional semiconductor, interlayer coupling, chemical vapor deposition (CVD) synthesis, vacuum transfer method, dual-gate transistor

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Publication history
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Acknowledgements

Publication history

Received: 24 November 2021
Revised: 18 February 2022
Accepted: 28 February 2022
Published: 05 May 2022
Issue date: July 2022

Copyright

© Tsinghua University Press 2022

Acknowledgements

Acknowledgements

This work was supported by the National Key Research and Development Program of China (Nos. 2021YFA1200500 and 2018YFA0703700), in part by the National Natural Science Foundation of China (No. 61774042), the Innovation Program of Shanghai Municipal Education Commission (No. 2021-01-07-00-07-E00077), and Shanghai Municipal Science and Technology Commission (Nos. 21DZ1100900 and 20ZR1403200).

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