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Nano Research 2022, 15(5): 4717-4723 https://doi.org/10.1007/s12274-021-4061-0
Research Article | Issue | Published: 27 January 2022

Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate

Show Author's Information Ning Cao1,  Peng Liu1,  Jialiang Pan2,  Liheng Liang1,  Kunpeng Cai1,  Qingguo Shao1,  Hongwei Zhu2( ),  Xiaobei Zang1( )
School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Keywords:
graphene, chemical vapor deposition, high-entropy alloys
Topics:
Graphene
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Cao N, Liu P, Pan J, et al. Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate. Nano Research, 2022, 15(5): 4717-4723. https://doi.org/10.1007/s12274-021-4061-0
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Abstract Full text Electronic supplementary material About this article

A facile way to grow few-layer graphene on high-entropy alloy sheets is presented in this work. We systematically investigate the growth mechanism of graphene using the unique properties of FeCoNiCu0.25 high-entropy alloys. The intrinsic-trap-regulating growth mechanism derives from the synergistic effect of the multi-metal atoms and sluggish diffusion of high-entropy alloy. As a result, as-obtained few-layer of graphene has the characteristics of wide coverage, large size, good continuity, and high crystallinity with less amorphous carbon and extra wrinkles. Factors such as the Cu content, annealing time, growth temperature, growth time, carbon source flow rate, hydrogen flow rate and heat treatment method play a key role in the growth of high-quality graphene, and the best growth parameters have been explored. Besides, increasing alloy entropy is found to be responsible for the formation of high-quality graphene.


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About this article

Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate

Show Author's information Ning Cao1, Peng Liu1, Jialiang Pan2, Liheng Liang1, Kunpeng Cai1, Qingguo Shao1, Hongwei Zhu2( ), Xiaobei Zang1( )
School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

Abstract

A facile way to grow few-layer graphene on high-entropy alloy sheets is presented in this work. We systematically investigate the growth mechanism of graphene using the unique properties of FeCoNiCu0.25 high-entropy alloys. The intrinsic-trap-regulating growth mechanism derives from the synergistic effect of the multi-metal atoms and sluggish diffusion of high-entropy alloy. As a result, as-obtained few-layer of graphene has the characteristics of wide coverage, large size, good continuity, and high crystallinity with less amorphous carbon and extra wrinkles. Factors such as the Cu content, annealing time, growth temperature, growth time, carbon source flow rate, hydrogen flow rate and heat treatment method play a key role in the growth of high-quality graphene, and the best growth parameters have been explored. Besides, increasing alloy entropy is found to be responsible for the formation of high-quality graphene.

Keywords: graphene, chemical vapor deposition, high-entropy alloys

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Publication history
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Acknowledgements

Publication history

Received: 26 October 2021
Revised: 22 November 2021
Accepted: 08 December 2021
Published: 27 January 2022
Issue date: May 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 21905304), Natural Science Foundation of Shandong Province (No. ZX20210028), and the Fundamental Research Funds for the Central Universities (No. 19CX05001A).

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