Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate

A facile way to grow few-layer graphene on high-entropy alloy sheets is presented in this work. We systematically investigate the growth mechanism of graphene using the unique properties of FeCoNiCu_0.25 high-entropy alloys. The intrinsic-trap-regulating growth mechanism derives from the synergistic effect of the multi-metal atoms and sluggish diffusion of high-entropy alloy. As a result, as-obtained few-layer of graphene has the characteristics of wide coverage, large size, good continuity, and high crystallinity with less amorphous carbon and extra wrinkles. Factors such as the Cu content, annealing time, growth temperature, growth time, carbon source flow rate, hydrogen flow rate and heat treatment method play a key role in the growth of high-quality graphene, and the best growth parameters have been explored. Besides, increasing alloy entropy is found to be responsible for the formation of high-quality graphene.