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Research Article

Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate

Ning Cao1Peng Liu1Jialiang Pan2Liheng Liang1Kunpeng Cai1Qingguo Shao1Hongwei Zhu2( )Xiaobei Zang1( )
School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao 266580, China
State Key Lab of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
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A facile approach to grow few-layer graphene on high-entropy alloy (FeCoNiCux) is presented and the growth mechanism of graphene is systematically investigated.

Abstract

A facile way to grow few-layer graphene on high-entropy alloy sheets is presented in this work. We systematically investigate the growth mechanism of graphene using the unique properties of FeCoNiCu0.25 high-entropy alloys. The intrinsic-trap-regulating growth mechanism derives from the synergistic effect of the multi-metal atoms and sluggish diffusion of high-entropy alloy. As a result, as-obtained few-layer of graphene has the characteristics of wide coverage, large size, good continuity, and high crystallinity with less amorphous carbon and extra wrinkles. Factors such as the Cu content, annealing time, growth temperature, growth time, carbon source flow rate, hydrogen flow rate and heat treatment method play a key role in the growth of high-quality graphene, and the best growth parameters have been explored. Besides, increasing alloy entropy is found to be responsible for the formation of high-quality graphene.

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12274_2021_4061_MOESM1_ESM.pdf (1.7 MB)
Nano Research
Pages 4717-4723
Cite this article:
Cao N, Liu P, Pan J, et al. Intrinsic-trap-regulating growth of clean graphene on high-entropy alloy substrate. Nano Research, 2022, 15(5): 4717-4723. https://doi.org/10.1007/s12274-021-4061-0
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Received: 26 October 2021
Revised: 22 November 2021
Accepted: 08 December 2021
Published: 27 January 2022
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021
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