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Nano Research 2022, 15(4): 3660-3666 https://doi.org/10.1007/s12274-021-3969-8
Research Article | Issue | Published: 07 December 2021

Solution processed high performance perovskite quantum dots/ZnO phototransistors

Show Author's Information Md Mehedi Hasan1,  Eric Moyen1( ),  Jewel Kumer Saha1,  Md Mobaidul Islam1,  Arqum Ali1,  Jin Jang1( )
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Republic of Korea
Keywords:
perovskite quantum dots, ZnO thin film transistors, photo-detectors, photo-transistors
Topics:
Energy storage
Cite this article:
Hasan MM, Moyen E, Saha JK, et al. Solution processed high performance perovskite quantum dots/ZnO phototransistors. Nano Research, 2022, 15(4): 3660-3666. https://doi.org/10.1007/s12274-021-3969-8
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Abstract Full text About this article

Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel / zirconium oxide gate insulator thin film transistors (TFTs) and room temperature synthesized perovskite quantum dots (PeQDs) as active layer. Typical ZnO thin film transistors did not show a photocurrent under visible light illumination. However, ZnO TFTs decorated with PeQDs exhibited enhanced photocurrent upon exposure to visible light. The device had a responsivity of 567 A/W (617 A/W), a high detectivity of 6.59 × 1013 Jones (1.85 × 1014 J) and a high sensitivity of 107 (108) under green (blue) light at a low drain voltage of 0.1 V. The high photo-responsivity and detectivity under green light resulted from the combination of short ligands in the QDs films and the high mobility of the spray coated ZnO films. Those results are relevant for the development of low cost and low energy consumption phototransistors working in the visible range.


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About this article

Solution processed high performance perovskite quantum dots/ZnO phototransistors

Show Author's information Md Mehedi Hasan1, Eric Moyen1( ), Jewel Kumer Saha1, Md Mobaidul Islam1, Arqum Ali1, Jin Jang1( )
Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, 26, Kyungheedae-ro, Dongdaemun-gu, Seoul 02447, Republic of Korea

Abstract

Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel / zirconium oxide gate insulator thin film transistors (TFTs) and room temperature synthesized perovskite quantum dots (PeQDs) as active layer. Typical ZnO thin film transistors did not show a photocurrent under visible light illumination. However, ZnO TFTs decorated with PeQDs exhibited enhanced photocurrent upon exposure to visible light. The device had a responsivity of 567 A/W (617 A/W), a high detectivity of 6.59 × 1013 Jones (1.85 × 1014 J) and a high sensitivity of 107 (108) under green (blue) light at a low drain voltage of 0.1 V. The high photo-responsivity and detectivity under green light resulted from the combination of short ligands in the QDs films and the high mobility of the spray coated ZnO films. Those results are relevant for the development of low cost and low energy consumption phototransistors working in the visible range.

Keywords: perovskite quantum dots, ZnO thin film transistors, photo-detectors, photo-transistors

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Publication history
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Acknowledgements

Publication history

Received: 12 August 2021
Revised: 05 October 2021
Accepted: 27 October 2021
Published: 07 December 2021
Issue date: April 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported by the Technology Innovation Program (No. 20011317), Development of an adhesive material capable of morphing more than 50% for flexible devices with a radius of curvature of 1 mm or less funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

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