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Nano Research 2022, 15(4): 2913-2918 https://doi.org/10.1007/s12274-021-3896-8
Research Article | Issue | Published: 12 November 2021

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Show Author's Information Yuting Chen1,2,  Yang Yang1,2,  Peng Yuan1,2,  Pengfei Jiang1,2,  Yuan Wang1,2,  Yannan Xu1,2,  Shuxian Lv1,2,  Yaxin Ding1,2,  Zhiwei Dang1,2,  Zhaomeng Gao1,2,  Tiancheng Gong1,2,  Yan Wang1,2,  Qing Luo1,2,3( )
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
University of Chinese Academy of Sciences, Beijing 100049, China
Department of Mathematics and Theories, Peng Cheng Laboratory, No.2, Xingke 1st Street, Nanshan, Shenzhen 518000, China
Keywords:
ferroelectric, flexible, Hf0.5Zr0.5O2(HZO) , Al2O3 buffer layer
Topics:
Electrocatalysis
Cite this article:
Chen Y, Yang Y, Yuan P, et al. Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility. Nano Research, 2022, 15(4): 2913-2918. https://doi.org/10.1007/s12274-021-3896-8
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Abstract Full text Electronic supplementary material About this article

Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 μC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.


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Electronic supplementary material
About this article

Flexible Hf0.5Zr0.5O2 ferroelectric thin films on polyimide with improved ferroelectricity and high flexibility

Show Author's information Yuting Chen1,2, Yang Yang1,2, Peng Yuan1,2, Pengfei Jiang1,2, Yuan Wang1,2, Yannan Xu1,2, Shuxian Lv1,2, Yaxin Ding1,2, Zhiwei Dang1,2, Zhaomeng Gao1,2, Tiancheng Gong1,2, Yan Wang1,2, Qing Luo1,2,3( )
Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
University of Chinese Academy of Sciences, Beijing 100049, China
Department of Mathematics and Theories, Peng Cheng Laboratory, No.2, Xingke 1st Street, Nanshan, Shenzhen 518000, China

Abstract

Flexible memory devices are promising for information storage and data processing applications in portable, wearable, and smart electronics operating under curved conditions. In this work, we realized high-performance flexible ferroelectric capacitors based on Hf0.5Zr0.5O2 (HZO) thin film by depositing a buffer layer of Al2O3 on polyimide (PI) substrates using atomic layer deposition (ALD). The flexible ferroelectric HZO films exhibit high remnant polarization (Pr) of 21 μC/cm2. Furthermore, deterioration of polarization, retention, and endurance performance was not observed even at a bending radius of 2 mm after 5,000 bending cycles. This work marks a critical step in the development of high-performance flexible HfO2-based ferroelectric memories for next-generation wearable electronic devices.

Keywords: ferroelectric, flexible, Hf0.5Zr0.5O2(HZO) , Al2O3 buffer layer

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Publication history
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Acknowledgements

Publication history

Received: 03 August 2021
Revised: 08 September 2021
Accepted: 17 September 2021
Published: 12 November 2021
Issue date: April 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported in part by the National Natural Science Foundation of China (Nos. 61922083, 61804167, 61834009, 61904200, and 61821091), and in part by the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDB44000000).

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