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Nano Research 2022, 15(3): 2643-2649 https://doi.org/10.1007/s12274-021-3859-0
Research Article | Issue | Published: 12 October 2021

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Show Author's Information Mukhtar Lawan Adam1,2,5,§,  Hongen Zhu1,§,  Zhanfeng Liu1,  Shengtao Cui1,  Pengjun Zhang1,  Yi Liu1,  Guobin Zhang1,  Xiaojun Wu2( ),  Zhe Sun1,3,4( ),  Li Song1( )
National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei230029, China
Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, School of Chemistry and Materials Sciences, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China
CAS key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
Physics Department, Bayero University, Kano 700231, Nigeria

§ Mukhtar Lawan Adam and Hongen Zhu contributed equally to this work.

Keywords:
first-principles, intercalation, charge density wave, angle-resolved photoemission spectroscopy (ARPES), charge doping, single-crystals
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Single crystals
Cite this article:
Lawan Adam M, Zhu H, Liu Z, et al. Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation. Nano Research, 2022, 15(3): 2643-2649. https://doi.org/10.1007/s12274-021-3859-0
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Abstract Full text About this article

Taking advantage of the unique layered structure of TiSe2, the intrinsic electronic properties of two-dimensional materials can easily be tuned via heteroatomic engineering. Herein, we show that the charge density wave (CDW) phase in 1T-TiSe2 single-crystals can be gradually suppressed through Sn atoms intercalation. Using angle-resolved photoemission spectroscopy (ARPES) and temperature-dependent resistivity measurements, this work reveals that Sn atoms can induce charge doping and modulate the intrinsic electronic properties in the host 1T-TiSe2. Notably, our temperature-dependent ARPES results highlight the role exciton-phonon interaction and the Jahn-Teller mechanism through the formation of backfolded bands and exhibition of a downward Se shift of 4p valence band in the formation of CDW in this material.


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About this article

Charge density wave phase suppression in 1T-TiSe2 through Sn intercalation

Show Author's information Mukhtar Lawan Adam1,2,5,§, Hongen Zhu1,§, Zhanfeng Liu1, Shengtao Cui1, Pengjun Zhang1, Yi Liu1, Guobin Zhang1, Xiaojun Wu2( ), Zhe Sun1,3,4( ), Li Song1( )
National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei230029, China
Hefei National Laboratory for Physical Sciences at the Microscale, CAS Key Laboratory of Materials for Energy Conversion, Synergetic Innovation of Quantum Information & Quantum Technology, School of Chemistry and Materials Sciences, and CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China
CAS key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230026, China
CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China
Physics Department, Bayero University, Kano 700231, Nigeria

§ Mukhtar Lawan Adam and Hongen Zhu contributed equally to this work.

Abstract

Taking advantage of the unique layered structure of TiSe2, the intrinsic electronic properties of two-dimensional materials can easily be tuned via heteroatomic engineering. Herein, we show that the charge density wave (CDW) phase in 1T-TiSe2 single-crystals can be gradually suppressed through Sn atoms intercalation. Using angle-resolved photoemission spectroscopy (ARPES) and temperature-dependent resistivity measurements, this work reveals that Sn atoms can induce charge doping and modulate the intrinsic electronic properties in the host 1T-TiSe2. Notably, our temperature-dependent ARPES results highlight the role exciton-phonon interaction and the Jahn-Teller mechanism through the formation of backfolded bands and exhibition of a downward Se shift of 4p valence band in the formation of CDW in this material.

Keywords: first-principles, intercalation, charge density wave, angle-resolved photoemission spectroscopy (ARPES), charge doping, single-crystals

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Publication history
Copyright
Acknowledgements

Publication history

Received: 09 July 2021
Revised: 31 August 2021
Accepted: 01 September 2021
Published: 12 October 2021
Issue date: March 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

The authors acknowledge the financial support from the National Key R&D Program of China (Nos. 2020YFA0405800 and 2017YFA0303500), the National Natural Science Foundation of China (NSFC) (Nos. U1932201, and 21727801), the International Partnership Program of The Chinese Academy of Sciences (CAS) (No. 211134KYSB20190063), the CAS Collaborative Innovation Program of Hefei Science Center (No. 2019HSC-CIP002), and the University Synergy Innovation Program of Anhui Province (No. GXXT-2020-002). We thank the USTC supercomputer center (USTC SCC). We acknowledge the support and usage of supercomputing platform of the National Synchrotron Radiation Lab, Hefei and also the ARPES endstation at the NSRL. M. L. A. acknowledges the Chinese Scholarship Council Program.

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