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Nano Research 2022, 15(3): 2682-2688 https://doi.org/10.1007/s12274-021-3782-4
Research Article | Issue | Published: 06 September 2021

Flexible artificial synapse based on single-crystalline BiFeO3 thin film

Show Author's Information Zhen Zhao1,§,  Amr Abdelsamie2,§,  Rui Guo1,3,§( ),  Shu Shi3,  Jianhui Zhao1,  Weinan Lin3,  Kaixuan Sun1,  Jingjuan Wang1,  Junling Wang2,4,  Xiaobing Yan1( ),  Jingsheng Chen3( )
Key Laboratory of Brain-like Neuromorphic Devices and Systems of Hebei Province, College of Electron and Information Engineering, Hebei University, Baoding 071002, China
Department of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
Department of Materials Science and Engineering, National University of Singapore, Singapore 117576, Singapore
Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China

§Zhen Zhao, Amr Abdelsamie, and Rui Guo contributed equally to this work.

Keywords:
memristor, ferroelectricity, flexible, artificial synapse
Topics:
Semiconductor
Cite this article:
Zhao Z, Abdelsamie A, Guo R, et al. Flexible artificial synapse based on single-crystalline BiFeO3 thin film. Nano Research, 2022, 15(3): 2682-2688. https://doi.org/10.1007/s12274-021-3782-4
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Abstract About this article

Realization of functional flexible artificial synapse is a significant step toward neuromorphic computing. Herein, a flexible artificial synapse based on ferroelectric tunnel junctions (FTJs) is demonstrated, using BiFeO3 (BFO) thin film as the functional layer. The inorganic single crystalline FTJs grown on rigid perovskite substrates at high temperatures are integrated with the flexible plastic substrates, by using the water-soluble Sr3Al2O6 (SAO) as the sacrificial layer and the following transfer. The transferred freestanding BFO thin film exhibits excellent ferroelectric properties. Moreover, the memristive properties and the brain-like synaptic learning performance of the flexible FTJs are investigated. The results show that multilevel resistance states were maintained well of the flexible artificial synapse, together with their stable synaptic learning properties. Our work indicates the promising opportunity of ferroelectric thin film based flexible synapse used in the future neuromorphic computing system.

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Acknowledgements

Publication history

Received: 29 April 2021
Revised: 28 July 2021
Accepted: 01 August 2021
Published: 06 September 2021
Issue date: March 2022

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© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 62004056), and the Hundred Persons Plan of Hebei Province (Nos. E2018050004 and E2018050003). This work was also supported by National Natural Science Foundation of China (Nos. 61674050 and 61874158), the Outstanding Youth Project of Hebei Province (No. F2016201220), the Project of Distinguished Young of Hebei Province (No. A2018201231), the Support Program for the Top Young Talents of Hebei Province (No. 70280011807), the Training and Introduction of High-level Innovative Talents of Hebei University (No. 801260201300), and the Supporting Plan for 100 Excellent Innovative Talents in Colleges and Universities of Hebei Province (No. SLRC2019018).

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