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Review Article

Recent progress of flexible electronics by 2D transition metal dichalcogenides

Lu Zheng1,2Xuewen Wang1,2( )Hanjun Jiang1Manzhang Xu1,2Wei Huang1,2( )Zheng Liu3 ( )
Frontiers Science Center for Flexible Electronics (FSCFE) & Shaanxi Institute of Flexible Electronics (SIFE), Northwestern Polytechnical University, Xi’an 710072, China
Shaanxi Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University, Xi’an 710072, China
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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Abstract

Flexible electronics is the research field with interdisciplinary crossing and integration. It shows the promising advantages of novel device configurations, low-cost and low-power consumption due to their flexible and soft characteristics. Atomic layered two-dimensional (2D) materials especially transition metal dichalcogenides, have triggered great interest in ultra-thin 2D flexible electronic devices and optoelectronic devices because of their direct and tunable bandgaps, excellent electrical, optical, mechanical, and thermal properties. This review aims to provide the recent progress in 2D TMDs and their applications in flexible electronics. The fundamental electrical properties and mechanical properties of materials, flexible device configurations, and their performance in transistors, sensors, and photodetectors are thoroughly discussed. At last, some perspectives are given on the open challenges and prospects for 2D TMDs flexible electronic devices and new device opportunities.

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Nano Research
Pages 2413-2432

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Cite this article:
Zheng L, Wang X, Jiang H, et al. Recent progress of flexible electronics by 2D transition metal dichalcogenides. Nano Research, 2022, 15(3): 2413-2432. https://doi.org/10.1007/s12274-021-3779-z
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Received: 15 June 2021
Revised: 21 July 2021
Accepted: 26 July 2021
Published: 04 September 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021