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Van der Waals’ two-dimensional (2D) material heterostructure engineering offers an effective strategy for the design of multifunctional and high-performance optoelectronic devices. However, 2D heterostructure photodetectors with a photoconductive effect tend to suffer from high driving source-drain voltages and significant dark noise currents. Herein, a self-powered photodetector with high performance was fabricated based on vertically stacked graphene/MoSe2/PdSe2/graphene heterojunctions through a dry transfer method. The fabricated device displays current rectification characteristics in darkness (on/off ratio > 10 3) and superior photovoltaic behaviors under illumination. In addition, benefitting from the strong built-in field, the Gr/PdSe2/MoSe2/Gr heterojunction photodetector is able to respond to a broad spectrum from visible to near-infrared (NIR) with a remarkable responsivity of 651 mA·W−1, a high specific detectivity of 5.29 × 1011 Jones and a fast response speed of 41.7/62.5 μs. Moreover, an enhanced responsivity of 1.16 A·W−1 has been obtained by a reverse voltage (−1 V) and further evaluation on image recognition has also demonstrated the great application potential of the Gr/MoSe2/PdSe2/Gr heterojunction photodetector. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient photodetectors for comprehensive applications.
Rogalski, A. Toward third generation HgCdTe infrared detectors. J. Alloys Compd. 2004, 371, 53–57.
Krishna, S.; Forman, D.; Annamalai, S.; Dowd, P.; Varangis, P.; Tumolillo, T. Jr.; Gray, A.; Zilko, J.; Sun, K.; Liu, M. G. et al. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors. Appl. Phys. Lett. 2005, 86, 193501.
Bie, Y. Q.; Liao, Z. M.; Zhang, H. Z.; Li, G. R.; Ye, Y.; Zhou, Y. B.; Xu, J.; Qin, Z. X.; Dai, L.; Yu, D. P. Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions. Adv. Mater. 2011, 23, 649–653.
Qiu, Q. X.; Huang, Z. M. Photodetectors of 2D materials from ultraviolet to terahertz waves. Adv. Mater. 2021, 33, 2008126.
Liu, Y. P.; Xia, Q. L.; He, J.; Liu, Z. W. Direct observation of high photoresponsivity in pure graphene photodetectors. Nanoscale Res. Lett. 2017, 12, 93.
Liu, Y. P.; Gao, Y. J.; Zhang, S. Y.; He, J.; Yu, J.; Liu, Z. W. Valleytronics in transition metal dichalcogenides materials. Nano Res. 2019, 12, 2695–2711.
Cao, L. K.; Zhong, J. H.; Yu, J.; Zeng, C.; Ding, J. N.; Cong, C. X.; Yue, X. F.; Liu, Z. W.; Liu, Y. P. Valley-polarized local excitons in WSe2/WS2 vertical heterostructures. Opt. Express 2020, 28, 22135–22143.
Yu, J.; Kuang, X. F.; Gao, Y. J.; Wang, Y. P.; Chen, K. Q.; Ding, Z. K.; Liu, J.; Cong, C. X.; He, J.; Liu, Z. W. et al. Direct observation of the linear dichroism transition in two-dimensional palladium diselenide. Nano Lett. 2020, 20, 1172–1182.
Yu, J.; Kuang, X. F.; Zhong, J. H.; Cao, L. K.; Zeng, C.; Ding, J. N.; Cong, C. X.; Wang, S. H.; Dai, P. F.; Yue, X. F. et al. Observation of double indirect interlayer exciton in WSe2/WS2 heterostructure. Opt. Express 2020, 28, 13260–13268.
Yu, J.; Zhong, J. H.; Kuang, X. F.; Zeng, C.; Cao, L. K.; Liu, Y. P.; Liu, Z. W. Dynamic control of high-range photoresponsivity in a graphene nanoribbon photodetector. Nanoscale Res. Lett. 2020, 15, 124.
Zeng, C.; Zhong, J. H.; Wang, Y. P.; Yu, J.; Cao, L. K.; Zhao, Z. L.; Ding, J. N.; Cong, C. X.; Yue, X. F.; Liu, Z. W. et al. Observation of split defect-bound excitons in twisted WSe2/WSe2 homostructure. Appl. Phys. Lett. 2020, 117, 153103.
Zhong, J. H.; Yu, J.; Cao, L. K.; Zeng, C.; Ding, J. N.; Cong, C. X.; Liu, Z. W.; Liu, Y. P. High-performance polarization-sensitive photodetector based on a few-layered PdSe2 nanosheet. Nano Res. 2020, 13, 1780–1786.
Yu, J.; Kuang, X. F.; Li, J.; Zhong, J. Z.; Zeng, C.; Cao, L. K.; Liu, Z. W.; Zeng, Z. X. S.; Luo, Z. Y.; He, T. C. et al. Giant nonlinear optical activity in two-dimensional palladium diselenide. Nat. Commun. 2021, 12, 1083.
Fang, H. H.; Hu, W. D. Photogating in low dimensional photodetectors. Adv. Sci. 2017, 4, 1700323.
Lv, Q. S.; Yan, F. G.; Wei, X.; Wang, K. Y. High-performance, self-driven photodetector based on graphene sandwiched GaSe/WS2 heterojunction. Adv. Opt. Mater. 2018, 6, 1700490.
Li, F.; Xu, B. Y.; Yang, W.; Qi, Z. Y.; Ma, C.; Wang, Y. J.; Zhang, X. H.; Luo, Z. R.; Liang, D. L.; Li, D. et al. High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures. Nano Res. 2020, 13, 1053–1059.
Lee, H. S.; Ahn, J.; Shim, W.; Im, S.; Hwang, D. K. 2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection. Appl. Phys. Lett. 2018, 113, 163102.
Wang, F.; Wang, Z. X.; Xu, K.; Wang, F. M.; Wang, Q. S.; Huang, Y.; Yin, L.; He, J. Tunable GaTe-MoS2 van der Waals p–n junctions with novel optoelectronic performance. Nano Lett. 2015, 15, 7558–7566.
Ye, L.; Li, H.; Chen, Z. F.; Xu, J. B. Near-infrared photodetector based on MoS2/black phosphorus heterojunction. ACS Photonics 2016, 3, 692–699.
Liu, D. Y.; Hong, J. H.; Wang, X.; Li, X. B.; Feng, Q. L.; Tan, C. W.; Zhai, T. Y.; Ding, F.; Peng, H. L.; Xu, H. Diverse atomically sharp interfaces and linear dichroism of 1T' ReS2-ReSe2 lateral p–n heterojunctions. Adv. Funct. Mater. 2018, 28, 1804696.
Sun, J. F.; Shi, H. L.; Siegrist, T.; Singh, D. J. Electronic, transport, and optical properties of bulk and mono-layer PdSe2. Appl. Phys. Lett. 2015, 107, 153902.
Oyedele, A. D.; Yang, S. Z.; Liang, L. B.; Puretzky, A. A.; Wang, K.; Zhang, J. J.; Yu, P.; Pudasaini, P. R.; Ghosh, A. W.; Liu, Z. et al. PdSe2: Pentagonal two-dimensional layers with high air stability for electronics. J. Am. Chem. Soc. 2017, 139, 14090–14097.
Long, M. S.; Wang, Y.; Wang, P.; Zhou, X. H.; Xia, H.; Luo, C.; Huang, S. Y.; Zhang, G. W.; Yan, H. G.; Fan, Z. Y. et al. Palladium diselenide long-wavelength infrared photodetector with high sensitivity and stability. ACS Nano 2019, 13, 2511–2519.
Li, A.; Chen, Q. X.; Wang, P. P.; Gan, Y.; Qi, T. L.; Wang, P.; Tang, F. D.; Wu, J. Z.; Chen, R.; Zhang, L. Y. et al. Ultrahigh-sensitive broadband photodetectors based on dielectric shielded MoTe2/Graphene/SnS2 p-g-n junctions. Adv. Mater. 2019, 31, 1805656.
Liu, Y. P.; Zhang, S. Y.; He, J.; Wang, Z. M. M.; Liu, Z. W. Recent progress in the fabrication, properties, and devices of heterostructures based on 2D materials. Nano-Micro Lett. 2019, 11, 13.
Lin, M. L.; Zhou, Y.; Wu, J. B.; Cong, X.; Liu, X. L.; Zhang, J.; Li, H.; Yao, W.; Tan, P. H. Cross-dimensional electron-phonon coupling in van der Waals heterostructures. Nat. Commun. 2019, 10, 2429.
Wu, J. B.; Lin, M. L.; Cong, X.; Liu, H. N.; Tan, P. H. Raman spectroscopy of graphene-based materials and its applications in related devices. Chem. Soc. Rev. 2018, 47, 1822–1873.
Tonndorf, P.; Schmidt, R.; Böttger, P.; Zhang, X.; Börner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D. R. T. et al. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 2013, 21, 4908–4916.
Tan, P. H.; Han, W. P.; Zhao, W. J.; Wu, Z. H.; Chang, K.; Wang, H.; Wang, Y. F.; Bonini, N.; Marzari, N.; Pugno, N. et al. The shear mode of multilayer graphene. Nat. Mater. 2012, 11, 294–300.
Zhang, X.; Qiao, X. F.; Shi, W.; Wu, J. B.; Jiang, D. S.; Tan, P. H. Phonon and Raman scattering of two-dimensional transition metal dichalcogenides from monolayer, multilayer to bulk material. Chem. Soc. Rev. 2015, 44, 2757–2785.
Larentis, S.; Fallahazad, B.; Tutuc, E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 2012, 101, 223104.
Wang, X. L.; Gong, Y. J.; Shi, G.; Chow, W. L.; Keyshar, K.; Ye, G. L.; Vajtai, R.; Lou, J.; Liu, Z.; Ringe, E. et al. Chemical vapor deposition growth of crystalline monolayer MoSe2. ACS Nano 2014, 8, 5125–5131.
Pospischil, A.; Furchi, M. M.; Mueller, T. Solar-energy conversion and light emission in an atomic monolayer p–n diode. Nat. Nanotechnol. 2014, 9, 257–261.
Luo, P.; Wang, F. K.; Qu, J. Y.; Liu, K. L.; Hu, X. Z.; Liu, K. W.; Zhai, T. Y. Self-driven WSe2/Bi2O2Se van der Waals heterostructure photodetectors with high light On/Off ratio and fast response. Adv. Funct. Mater. 2021, 31, 2008351.
Long, M. S.; Wang, P.; Fang, H. H.; Hu, W. D. Progress, challenges, and opportunities for 2D material based photodetectors. Adv. Funct. Mater. 2019, 29, 1803807.
Yu, M. M.; Hu, Y. X.; Gao, F.; Dai, M. J.; Wang, L. F.; Hu, P. A.; Feng, W. High-performance devices based on InSe–In1-xGaxSe van der Waals heterojunctions. ACS Appl. Mater. Interfaces 2020, 12, 24978–24983.
Dai, M.; Chen, H.; Wang, F.; Long, M.; Shang, H.; Hu, Y.; Li, W.; Ge, C.; Zhang, J.; Zhai, T. et al. Ultrafast and sensitive self-powered photodetector featuring self-limited depletion region and fully depleted channel with van der Waals contacts. ACS Nano 2020, 14, 9098–9106.
Wang, Y. G.; Huang, X. W.; Wu, D.; Zhuo, R. R.; Wu, E. P.; Jia, C.; Shi, Z. F.; Xu, T. T.; Tian, Y. T.; Li, X. J. A room-temperature near-infrared photodetector based on a MoS2/CdTe p–n heterojunction with a broadband response up to 1700 nm. J. Mater. Chem. C 2018, 6, 4861–4865.
Ning, J.; Zhou, Y.; Zhang, J. C.; Lu, W.; Dong, J. G.; Yan, C. C.; Wang, D.; Shen, X.; Feng, X.; Zhou, H. et al. Self-driven photodetector based on a GaSe/MoSe2 selenide van der Waals heterojunction with the hybrid contact. Appl. Phys. Lett. 2020, 117, 163104.
Wang, F.; Yin, L.; Wang, Z. X.; Xu, K.; Wang, F. M.; Shifa, T. A.; Huang, Y.; Jiang, C.; He, J. Configuration-dependent electrically tunable van der Waals heterostructures based on MoTe2/MoS2. Adv. Funct. Mater. 2016, 26, 5499–5506.
Zhao, S. W.; Wu, J. C.; Jin, K.; Ding, H. Y.; Li, T. S.; Wu, C. Z.; Pan, N.; Wang, X. P. Highly polarized and fast photoresponse of black phosphorus-InSe vertical p–n heterojunctions. Adv. Funct. Mater. 2018, 28, 1802011.
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