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Nano Research 2022, 15(3): 2706-2714 https://doi.org/10.1007/s12274-021-3731-2
Research Article | Open Access | Issue | Published: 29 July 2021

Growth, coalescence, and etching of two-dimensional overlayers on metals modulated by near-surface Ar nanobubbles

Show Author's Information Wei Wei1,  Jiaqi Pan1,  Haiping Lin2,  Chanan Euaruksakul3,  Zhiyun Li1,  Rong Huang1,  Li Wang1,  Zhujun Wang4,5( ),  Qiang Fu6( ),  Yi Cui1( )
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand
School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
Scientific Center for Optical and Electron Microscopy, ETH Zürich, 8093 Zürich, Switzerland
State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China
Keywords:
two dimensional materials, overlayer–substrate interaction, near-surface Ar nanobubbles, evolution behavior, surface dynamics
Topics:
Chemical vapor deposition
Cite this article:
Wei W, Pan J, Lin H, et al. Growth, coalescence, and etching of two-dimensional overlayers on metals modulated by near-surface Ar nanobubbles. Nano Research, 2022, 15(3): 2706-2714. https://doi.org/10.1007/s12274-021-3731-2
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Abstract Full text About this article

The synthesis of high-quality ultrathin overlayers is critically dependent on the surface structure of substrates, especially involving the overlayer–substrate interaction. By using in situ surface measurements, we demonstrate that the overlayer–substrate interaction can be tuned by doping near-surface Ar nanobubbles. The interfacial coupling strength significantly decreases with near-surface Ar nanobubbles, accompanying by an “anisotropic to isotropic” growth transformation. On the substrate containing near-surface Ar, the growth front crosses entire surface atomic steps in both uphill and downhill directions with no difference, and thus, the morphology of the two-dimensional (2D) overlayer exhibits a round-shape. Especially, the round-shaped 2D overlayers coalesce seamlessly with a growth acceleration in the approaching direction, which is barely observed in the synthesis of 2D materials. This can be attributed to the immigration lifetime and diffusion rate of growth species, which depends on the overlayer–substrate interaction and the surface catalysis. Furthermore, the “round to hexagon” morphological transition is achieved by etching-regrowth, revealing the inherent growth kinetics under quasi-freestanding conditions. These findings provide a novel promising way to modulate the growth, coalescence, and etching dynamics of 2D materials on solid surfaces by adjusting the strength of overlayer–substrate interaction, which contributes to optimization of large-scale production of 2D material crystals.


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About this article

Growth, coalescence, and etching of two-dimensional overlayers on metals modulated by near-surface Ar nanobubbles

Show Author's information Wei Wei1, Jiaqi Pan1, Haiping Lin2, Chanan Euaruksakul3, Zhiyun Li1, Rong Huang1, Li Wang1, Zhujun Wang4,5( ), Qiang Fu6( ), Yi Cui1( )
Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China
Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand
School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China
Scientific Center for Optical and Electron Microscopy, ETH Zürich, 8093 Zürich, Switzerland
State Key Laboratory of Catalysis, iChEM, Dalian Institute of Chemical Physics, the Chinese Academy of Sciences, Dalian 116023, China

Abstract

The synthesis of high-quality ultrathin overlayers is critically dependent on the surface structure of substrates, especially involving the overlayer–substrate interaction. By using in situ surface measurements, we demonstrate that the overlayer–substrate interaction can be tuned by doping near-surface Ar nanobubbles. The interfacial coupling strength significantly decreases with near-surface Ar nanobubbles, accompanying by an “anisotropic to isotropic” growth transformation. On the substrate containing near-surface Ar, the growth front crosses entire surface atomic steps in both uphill and downhill directions with no difference, and thus, the morphology of the two-dimensional (2D) overlayer exhibits a round-shape. Especially, the round-shaped 2D overlayers coalesce seamlessly with a growth acceleration in the approaching direction, which is barely observed in the synthesis of 2D materials. This can be attributed to the immigration lifetime and diffusion rate of growth species, which depends on the overlayer–substrate interaction and the surface catalysis. Furthermore, the “round to hexagon” morphological transition is achieved by etching-regrowth, revealing the inherent growth kinetics under quasi-freestanding conditions. These findings provide a novel promising way to modulate the growth, coalescence, and etching dynamics of 2D materials on solid surfaces by adjusting the strength of overlayer–substrate interaction, which contributes to optimization of large-scale production of 2D material crystals.

Keywords: two dimensional materials, overlayer–substrate interaction, near-surface Ar nanobubbles, evolution behavior, surface dynamics

References(67)

1

Schwierz, F. Industry-compatible graphene transistors. Nature 2011, 472, 41–42.
DOI Google Scholar
2

Chen, J. H.; Ishigami, M.; Jang, C.; Hines, D. R.; Fuhrer, M. S.; Williams, E. D. Printed graphene circuits. Adv. Mater. 2007, 19, 3623–3627.
DOI Google Scholar
3

Bonaccorso, F.; Sun, Z.; Hasan, T.; Ferrari, A. C. Graphene photonics and optoelectronics. Nat. Photonics 2010, 4, 611–622.
DOI Google Scholar
4

Li, X. S.; Cai, W. W.; An, J. B.; Kim, S.; Nah, J.; Yang, D. X.; Piner, R.; Velamakanni, A.; Jung, I.; Tutuc, E. et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312–1314.
DOI Google Scholar
5

Reina, A.; Jia, X. T.; Ho, J.; Nezich, D.; Son, H.; Bulovic, V.; Dresselhaus, M. S.; Kong, J. Large area, few-layer graphene films on arbitrary substrates by chemical vapor deposition. Nano Lett. 2009, 9, 30–35.
DOI Google Scholar
6

Wintterlin, J.; Bocquet, M. L. Graphene on metal surfaces. Surf. Sci. 2009, 603, 1841–1852.
DOI Google Scholar
7

Batzill, M. The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects. Surf. Sci. Rep. 2012, 67, 83–115.
DOI Google Scholar
8

Qin, B.; Ma, H. F.; Hossain, M.; Zhong, M. Z.; Xia, Q. L.; Li, B.; Duan, X. D. Substrates in the synthesis of two-dimensional materials via chemical vapor deposition. Chem. Mater. 2020, 32, 10321–10347.
DOI Google Scholar
9

Sutter, P.; Sutter, E. Microscopy of graphene growth, processing, and properties. Adv. Funct. Mater. 2013, 23, 2617–2634.
DOI Google Scholar
10

Sutter, P. W.; Flege, J. I.; Sutter, E. A. Epitaxial graphene on ruthenium. Nat. Mater. 2008, 7, 406–411.
DOI Google Scholar
11

Miniussi, E.; Pozzo, M.; Mentes, T. O.; Niño, M. A.; Locatelli, A.; Vesselli, E.; Comelli, G.; Lizzit, S.; Alfè, D.; Baraldi, A. The competition for graphene formation on Re(0001): A complex interplay between carbon segregation, dissolution and carburisation. Carbon 2014, 73, 389–402.
DOI Google Scholar
12

Günther, S.; Dänhardt, S.; Wang, B.; Bocquet, M. L.; Schmitt, S.; Wintterlin, J. Single terrace growth of graphene on a metal surface. Nano Lett. 2011, 11, 1895–1900.
DOI Google Scholar
13

Meng, C. X.; Gao, J. F.; Li, R. T.; Ning, Y. X.; Chang, Y.; Mu, R. T.; Fu, Q.; Bao, X. H. Step-confined thin film growth via near-surface atom migration. Nano Res. 2020, 13, 1552–1557.
DOI Google Scholar
14

Yu, Q. K.; Jauregui, L. A.; Wu, W.; Colby, R.; Tian, J. F.; Su, Z. H.; Cao, H. L.; Liu, Z. H.; Pandey, D.; Wei, D. G. et al. Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition. Nat. Mater. 2011, 10, 443–449.
DOI Google Scholar
15

Sutter, P.; Sadowski, J. T.; Sutter, E. Graphene on Pt(111): Growth and substrate interaction. Phys. Rev. B 2009, 80, 245411.
DOI Google Scholar
16

Coraux, J.; N'Diaye, A. T.; Engler, M.; Busse, C.; Wall, D.; Buckanie, N.; zu Heringdorf, F. J. M.; van Gastel, R.; Poelsema, B.; Michely, T. Growth of graphene on Ir(111). New J. Phys. 2009, 11, 023006.
DOI Google Scholar
17

Zeng, M. Q.; Tan, L. F.; Wang, L. X.; Mendes, R. G.; Qin, Z. H.; Huang, Y. X.; Zhang, T.; Fang, L. W.; Zhang, Y. F.; Yue, S. L. et al. Isotropic growth of graphene toward smoothing stitching. ACS Nano 2016, 10, 7189–7196.
DOI Google Scholar
18

Lee, J. S.; Choi, S. H.; Yun, S. J.; Kim, Y. I.; Boandoh, S.; Park, J. H.; Shin, B. G.; Ko, H.; Lee, S. H.; Kim, Y. M. et al. Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation. Science 2018, 362, 817–821.
DOI Google Scholar
19

Liu, B. Z.; Wang, H. H.; Gu, W.; Zhou, L.; Chen, Z. L.; Nie, Y. F.; Tan, C. W.; Ci, H. N.; Wei, N.; Cui, L. Z. et al. Oxygen-assisted direct growth of large-domain and high-quality graphene on glass targeting advanced optical filter applications. Nano Res. 2021, 14, 260–267.
DOI Google Scholar
20

Chen, Y. B.; Sun, J. Y.; Gao, J. F.; Du, F.; Han, Q.; Nie, Y. F.; Chen, Z. L.; Bachmatiuk, A.; Priydarshi, M. K.; Ma, D. L. et al. Growing uniform graphene disks and films on molten glass for heating devices and cell culture. Adv. Mater. 2015, 27, 7839–7846.
DOI Google Scholar
21

Weatherup, R. S.; Amara, H.; Blume, R.; Dlubak, B.; Bayer, B. C.; Diarra, M.; Bahri, M.; Cabrero-Vilatela, A.; Caneva, S.; Kidambi, P. R. et al. Interdependency of subsurface carbon distribution and graphene-catalyst interaction. J. Am. Chem. Soc. 2014, 136, 13698–13708.
DOI Google Scholar
22

Wei, W.; Lin, L.; Zhang, G. H.; Ye, X. Q.; Bin, R.; Meng, C. X.; Ning, Y. X.; Fu, Q.; Bao, X. H. Effect of near-surface dopants on the epitaxial growth of h-BN on metal surfaces. Adv. Mater. Interfaces 2019, 6, 1801906.
DOI Google Scholar
23

Kohn, W.; Becke, A. D.; Parr, R. G. Density functional theory of electronic structure. J. Phys. Chem. 1996, 100, 12974–12980.
DOI Google Scholar
24

Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169–11186.
DOI Google Scholar
25

Blöchl, P. E. Projector augmented-wave method. Phys. Rev. B 1994, 50, 17953–17979.
DOI Google Scholar
26

Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758–1775.
DOI Google Scholar
27

Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865–3868.
DOI Google Scholar
28

Grimme, S.; Ehrlich, S.; Goerigk, L. Effect of the damping function in dispersion corrected density functional theory. J. Comput. Chem. 2011, 32, 1456–1465.
DOI Google Scholar
29

Preobrajenski, A. B.; Ng, M. L.; Vinogradov, A. S.; Mårtensson, N. Controlling graphene corrugation on lattice-mismatched substrates. Phys. Rev. B 2008, 78, 073401.
DOI Google Scholar
30

Kirsch, H.; Tong, Y. J.; Campen, R. K. Experimental characterization of CCH(ads) and CCH2(ads) during the thermal decomposition of methane and ethylene on Ru(0001). Chem Cat Chem 2016, 8, 728–735.
DOI Google Scholar
31

Ren, Y.; Waluyo, I.; Beale, E.; Trenary, M. Hydrogenation and dehydrogenation reactions of C2Hx moieties on the Ru(001) surface. Surf. Sci. 2016, 650, 144–148.
DOI Google Scholar
32

Gsell, M.; Jakob, P.; Menzel, D. Effect of substrate strain on adsorption. Science 1998, 280, 717–720.
DOI Google Scholar
33
Locatelli, A.; Menteş, T. O. Chemical and magnetic imaging with X-ray photoemission electron microscopy. In Synchrotron Radiation; Mobilio, S.; Boscherini, F.; Meneghini, C., Eds.; Springer: Berlin, Heidelberg, 2015; pp 571−591.https://doi.org/10.1007/978-3-642-55315-8_21
DOI
34

Tchaplyguine, M.; Feifel, R.; Marinho, R. R. T.; Gisselbrecht, M.; Sorensen, S. L.; de Brito, A. N.; Mårtensson, N.; Svensson, S.; Björneholm, O. Selective probing of the electronic structure of free clusters using resonant core-level spectroscopy. Chem. Phys. 2003, 289, 3–13.
DOI Google Scholar
35

Sutter, P.; Hybertsen, M. S.; Sadowski, J. T.; Sutter, E. Electronic structure of few-layer epitaxial graphene on Ru(0001). Nano Lett. 2009, 9, 2654–2660.
DOI Google Scholar
36

McCarty, K. F.; Feibelman, P. J.; Loginova, E.; Bartelt, N. C. Kinetics and thermodynamics of carbon segregation and graphene growth on Ru(0 0 0 1). Carbon 2009, 47, 1806–1813.
DOI Google Scholar
37

Zhang, Y. H.; Weng, X. F.; Li, H.; Li, H. B.; Wei, M. M.; Xiao, J. P.; Liu, Z.; Chen, M. S.; Fu, Q.; Bao, X. H. Hexagonal boron nitride cover on Pt(111): A new route to tune molecule-metal interaction and metal-catalyzed reactions. Nano Lett. 2015, 15, 3616–3623.
DOI Google Scholar
38

Yang, Y.; Fu, Q.; Wei, M. M.; Bluhm, H.; Bao, X. H. Stability of BN/metal interfaces in gaseous atmosphere. Nano Res. 2015, 8, 227–237.
DOI Google Scholar
39

Wang, Z. J.; Dong, J. C.; Li, L. F.; Dong, G. C.; Cui, Y.; Yang, Y.; Wei, W.; Blume, R.; Li, Q.; Wang, L. et al. The coalescence behavior of two-dimensional materials revealed by multiscale in situ imaging during chemical vapor deposition growth. ACS Nano 2020, 14, 1902–1918.
DOI Google Scholar
40

Addou, R.; Dahal, A.; Batzill, M. Growth of a two-dimensional dielectric monolayer on quasi-freestanding graphene. Nat. Nanotechnol. 2013, 8, 41–45.
DOI Google Scholar
41

Starodub, E.; Bartelt, N. C.; McCarty, K. F. Oxidation of graphene on metals. J. Phys. Chem. C 2010, 114, 5134–5140.
DOI Google Scholar
42

Wei, W.; Meng, C. X.; Fu, Q.; Bao, X. H. Intercalation-etching of graphene on Pt(111) in H2 and O2 observed by in-situ low energy electron microscopy. Sci. China Chem. 2017, 60, 656–662.
DOI Google Scholar
43

Lu, G. Y.; Wu, T. R.; Yuan, Q. H.; Wang, H. S.; Wang, H. M.; Ding, F.; Xie, X. M.; Jiang, M. H. Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy. Nat. Commun. 2015, 6, 6160.
DOI Google Scholar
44

Xu, X. Z.; Zhang, Z. H.; Qiu, L.; Zhuang, J. N.; Zhang, L.; Wang, H.; Liao, C. N.; Song, H. D.; Qiao, R. X.; Gao, P. et al. Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply. Nat. Nanotechnol. 2016, 11, 930–935.
DOI Google Scholar
45

Loginova, E.; Bartelt, N. C.; Feibelman, P. J.; McCarty, K. F. Evidence for graphene growth by C cluster attachment. New J. Phys. 2008, 10, 093026.
DOI Google Scholar
46

Wang, Z. J.; Weinberg, G.; Zhang, Q.; Lunkenbein, T.; Klein-Hoffmann, A.; Kurnatowska, M.; Plodinec, M.; Li, Q.; Chi, L. F.; Schloegl, R. et al. Direct observation of graphene growth and associated copper substrate dynamics by in situ scanning electron microscopy. ACS Nano 2015, 9, 1506–1519.
DOI Google Scholar
47

Navin, J. K.; Donald, S. B.; Tinney, D. G.; Cushing, G. W.; Harrison, I. Communication: Angle-resolved thermal dissociative sticking of CH4 on Pt(111): Further indication that rotation is a spectator to the gas-surface reaction dynamics. J. Chem. Phys. 2012, 136, 061101.
DOI Google Scholar
48

Harris, J.; Luntz, A. C. Tunneling-mediated dissociation at metal surfaces. Mod. Phys. Lett. B 1991, 5, 1953–1962.
DOI Google Scholar
49

Wang, Z. J.; Ding, F.; Eres, G.; Antonietti, M.; Schloegl, R.; Willinger, M. G. Formation mechanism, growth kinetics, and stability limits of graphene adlayers in metal-catalyzed CVD growth. Adv. Mater. Interfaces 2018, 5, 1800255.
DOI Google Scholar
50

Sun, Y. Y. L.; Zhang, S.; Zhang, W. H.; Li, Z. Y. Theoretical study of adsorption and dehydrogenation of C2H4 on Cu(410). Chin. J. Chem. Phys. 2018, 31, 485–491.
DOI Google Scholar
51

Wu, B.; Geng, D. C.; Xu, Z. P.; Guo, Y. L.; Huang, L. P.; Xue, Y. Z.; Chen, J. Y.; Yu, G.; Liu, Y. Q. Self-organized graphene crystal patterns. NPG Asia Mater. 2013, 5, e36.
DOI Google Scholar
52

Dong, G. C.; Frenken, J. W. M. Kinetics of graphene formation on Rh(111) investigated by in situ scanning tunneling microscopy. ACS Nano 2013, 7, 7028–7033.
DOI Google Scholar
53

Xu, Z. G.; Tian, H.; Khanaki, A.; Zheng, R. J.; Suja, M.; Liu, J. L. Large-area growth of multi-layer hexagonal boron nitride on polished cobalt foils by plasma-assisted molecular beam epitaxy. Sci. Rep. 2017, 7, 43100.
DOI Google Scholar
54

Blume, R.; Niehus, H.; Conrad, H.; Böttcher, A.; Aballe, L.; Gregoratti, L.; Barinov, A.; Kiskinova, M. Identification of subsurface oxygen species created during oxidation of Ru(0001). J. Phys. Chem. B 2005, 109, 14052–14058.
DOI Google Scholar
55

Sekerka, R. F. Equilibrium and growth shapes of crystals: How do they differ and why should we care? Cryst. Res. Technol. 2005, 40, 291–306.
DOI Google Scholar
56

Wang, L.; Xu, X. Z.; Zhang, L. N.; Qiao, R. X.; Wu, M. H.; Wang, Z. C.; Zhang, S.; Liang, J.; Zhang, Z. H.; Zhang, Z. B. et al. Epitaxial growth of a 100-square-centimetre single-crystal hexagonal boron nitride monolayer on copper. Nature 2019, 570, 91–95.
DOI Google Scholar
57

Zhang, Y.; Li, Z.; Kim, P.; Zhang, L. Y.; Zhou, C. W. Anisotropic hydrogen etching of chemical vapor deposited graphene. ACS Nano 2012, 6, 126–132.
DOI Google Scholar
58

Dobrik, G.; Tapasztó, L.; Biró, L. P. Selective etching of armchair edges in graphite. Carbon 2013, 56, 332–338.
DOI Google Scholar
59

Wang, Z. J.; Dong, J. C.; Cui, Y.; Eres, G.; Timpe, O.; Fu, Q.; Ding, F.; Schloegl, R.; Willinger, M. G. Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging. Nat. Commun. 2016, 7, 13256.
DOI Google Scholar
60

Zhang, X. Y.; Li, H.; Ding, F. Self-assembly of carbon atoms on transition metal surfaces-chemical vapor deposition growth mechanism of graphene. Adv. Mater. 2014, 26, 5488–5495.
DOI Google Scholar
61

Artyukhov, V. I.; Hao, Y. F.; Ruoff, R. S.; Yakobson, B. I. Breaking of symmetry in graphene growth on metal substrates. Phys. Rev. Lett. 2015, 114, 115502.
DOI Google Scholar
62

Ma, T.; Ren, W. C.; Zhang, X. Y.; Liu, Z. B.; Gao, Y.; Yin, L. C.; Ma, X. L.; Ding, F.; Cheng, H. M. Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition. Proc. Natl. Acad. Sci. USA 2013, 110, 20386–20391.
DOI Google Scholar
63

Artyukhov, V. I.; Liu, Y. Y.; Yakobson, B. I. Equilibrium at the edge and atomistic mechanisms of graphene growth. Proc. Natl. Acad. Sci. USA 2012, 109, 15136–15140.
DOI Google Scholar
64

Liu, Y. Y.; Dobrinsky, A.; Yakobson, B. I. Graphene edge from armchair to zigzag: The origins of nanotube chirality? Phys. Rev. Lett. 2010, 105, 235502.
DOI Google Scholar
65

Zeng, M. Q.; Tan, L. F.; Wang, J.; Chen, L. F.; Rümmeli, M. H.; Fu, L. Liquid metal: An innovative solution to uniform graphene films. Chem. Mater. 2014, 26, 3637–3643.
DOI Google Scholar
66

Xie, S.; Xu, M. S.; Liang, T.; Huang, G. W.; Wang, S. P.; Xue, G. B.; Meng, N.; Xu, Y.; Chen, H. Z.; Ma, X. Y. et al. A high-quality round-shaped monolayer MoS2 domain and its transformation. Nanoscale 2016, 8, 219–225.
DOI Google Scholar
67

Wei, W.; Meng, J.; Meng, C. X.; Ning, Y. X.; Li, Q. X.; Fu, Q.; Bao, X. H. Abnormal growth kinetics of h-BN epitaxial monolayer on Ru(0001) enhanced by subsurface Ar species. Appl. Phys. Lett. 2018, 112, 171601.
DOI Google Scholar
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Publication history

Received: 24 May 2021
Revised: 01 July 2021
Accepted: 03 July 2021
Published: 29 July 2021
Issue date: March 2022

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© The Author (s) 2021

Acknowledgements

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. 21872169, 91845109, 21688102, and 21825203), the National Key R&D Program of China (No. 2016YFA0200200), Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDB17020000), China Postdoctoral Science Foundation (No. 2019M651997), and Natural Science Foundation of Jiangsu Province (No. BK20200257). The authors are grateful for the support for Synchrotron Light Research Institute in Thailand.

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