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Nano Research 2022, 15(3): 2661-2666 https://doi.org/10.1007/s12274-021-3728-x
Research Article | Issue | Published: 12 August 2021

Observation of double indirect interlayer exciton in MoSe2/WSe2 heterostructure

Show Author's Information Biao Wu1,2,§,  Yunpeng Wang1,§,  Jiahong Zhong1,2,  Cheng Zeng1,2,  Yassine Madoune1,2,  Wanting Zhu1,  Zongwen Liu3,4,  Yanping Liu1,2,5( )
School of Physics and ElectronicsHunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, China
State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-tech Industrial Park, Yuehai Street, Nanshan District, Shenzhen 518057, China

§Biao Wu and Yunpeng Wang contributed equally to this work.

Keywords:
density functional theory, heterostructure, photoluminescence, interlayer exciton, transitional metal dichalcogenides
Topics:
Layered semiconductors
Cite this article:
Wu B, Wang Y, Zhong J, et al. Observation of double indirect interlayer exciton in MoSe2/WSe2 heterostructure. Nano Research, 2022, 15(3): 2661-2666. https://doi.org/10.1007/s12274-021-3728-x
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Abstract Full text About this article

Interlayer excitons (IXS) are electron–hole pairs bound in the spatial separation layer by the Coulomb effect, and their lifetime is several orders of magnitude longer than that of direct excitons, providing an essential platform for long-lived exciton devices. The recent emergence of the van der Waals heterostructure (HS), which combines two layers of different transitional metal dichalcogenides (TMDs), has created new opportunities for IX research. Herein, we demonstrate the observation of double indirect interlayer excitons in the MoSe2/WSe2 HS using photoluminescence (PL) spectroscopy. The intensities of the two peaks are essentially the same, and the energy difference is 22 meV, which is perfectly in line with the calculation result of density functional theory. Furthermore, the experience of variable excitation power also proves that the splitting of the IXs originates from the conduction band spin-splitting of MoSe2. The observation results provide a promising platform for further exploring the new physical properties and optoelectronic phenomena of TMD HS.


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About this article

Observation of double indirect interlayer exciton in MoSe2/WSe2 heterostructure

Show Author's information Biao Wu1,2,§, Yunpeng Wang1,§, Jiahong Zhong1,2, Cheng Zeng1,2, Yassine Madoune1,2, Wanting Zhu1, Zongwen Liu3,4, Yanping Liu1,2,5( )
School of Physics and ElectronicsHunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, China
State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, China
School of Chemical and Biomolecular Engineering, The University of Sydney, NSW 2006, Australia
The University of Sydney Nano Institute, The University of Sydney, NSW 2006, Australia
Shenzhen Research Institute of Central South University, A510a, Virtual University Building, Southern District, High-tech Industrial Park, Yuehai Street, Nanshan District, Shenzhen 518057, China

§Biao Wu and Yunpeng Wang contributed equally to this work.

Abstract

Interlayer excitons (IXS) are electron–hole pairs bound in the spatial separation layer by the Coulomb effect, and their lifetime is several orders of magnitude longer than that of direct excitons, providing an essential platform for long-lived exciton devices. The recent emergence of the van der Waals heterostructure (HS), which combines two layers of different transitional metal dichalcogenides (TMDs), has created new opportunities for IX research. Herein, we demonstrate the observation of double indirect interlayer excitons in the MoSe2/WSe2 HS using photoluminescence (PL) spectroscopy. The intensities of the two peaks are essentially the same, and the energy difference is 22 meV, which is perfectly in line with the calculation result of density functional theory. Furthermore, the experience of variable excitation power also proves that the splitting of the IXs originates from the conduction band spin-splitting of MoSe2. The observation results provide a promising platform for further exploring the new physical properties and optoelectronic phenomena of TMD HS.

Keywords: density functional theory, heterostructure, photoluminescence, interlayer exciton, transitional metal dichalcogenides

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Publication history
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Acknowledgements

Publication history

Received: 30 March 2021
Revised: 23 June 2021
Accepted: 03 July 2021
Published: 12 August 2021
Issue date: March 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

We are grateful for the support from the National Natural Science Foundation of China (No. 61775241), Hunan province key research and development project (No. 2019GK2233), the Hunan Science Fund for Distinguished Young Scholar (No. 2020JJ2059), Youth Innovation Team of Central South University (No. 2019012), Hunan Province Graduate Research and Innovation Project (No. CX20190177), and the Science and Technology Innovation Basic Research Project of Shenzhen (No. JCYJ20180307151237242). Also, Y. P. L. acknowledges the support provided by the Central South University of the State Key Laboratory of High-Performance Complex Manufacturing Project (No. ZZYJKT2020–12). Z. W. L. thanks the funding support from the Australian Research Council (ARC Discovery Projects) (Nos. DP210103539 and DP180102976).

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