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Perovskite materials are promising candidates for the next generation of wearable optoelectronics. However, due to uncontrolled crystallization and the natural brittle property of crystals, it remains a great challenge to fabricate large-scale compact and tough perovskite film. Here we report a facile method to print large-scale perovskite films with high quality for flexible photodetectors. By introducing a soluble polyethylene oxide (PEO) layer during the inkjet printing process, the nucleation and crystal growth of perovskite is well controlled. Perovskite films can be easily printed in large scale and patterned in high resolution. Moreover, this method can be extended to various kinds of perovskite materials, such as MAPbI3 (MA = methylammonium), MA3Sb2I9, and (BA)2PbBr4 (BA = benzylammonium). The printed perovskite films show high quality and excellent mechanical performance. The photodetectors based on the MAPbBr3 perovskite films show a responsivity up to ~ 1, 036 mA/W and maintain over 96.8% of the initial photocurrent after 15, 000 consecutive bending cycles. This strategy provides a facile approach to prepare large-scale flexible perovskite films. It opens up new opportunities for the fabrication of diverse wearable optoelectronic devices.

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Publication history
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Acknowledgements

Publication history

Received: 07 May 2021
Revised: 17 June 2021
Accepted: 18 June 2021
Published: 05 August 2021
Issue date: February 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported financially by the National Key R & D Program of China (Nos. 2018YFA0208501 and 2018YFA0703200), the National Natural Science Foundation of China (NSFC, Nos. 91963212, 51773206, 21875260 and 51961145102 [BRICS project]), K. C. Wong Education Foundation, Beijing Nature Science Foundation (No. 2202069), Beijing National Laboratory for Molecular Sciences (No. BNLMS-CXXM-202005), Key R & D and Promotion Project of Henan Province (No. 192102210032), Open Project of State Key Laboratory of Silicon Materials (No. SKL2019-10), and Outstanding Young Talent Research Fund of Zhengzhou University. The authors also thank China Science and Technology Cloud and the Advanced Analysis & Computation Center at Zhengzhou University for materials and device characterization support.

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