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Nano Research 2021, 14(10): 3352-3357 https://doi.org/10.1007/s12274-021-3649-8
Research Article | Issue | Published: 02 July 2021

Synthesis and photoluminescence kinetics of Ce3+-doped CsPbI3 QDs with near-unity PLQY

Show Author's Information Bowang Shu,  Yajing Chang,  Jinhua Zhang,  Xiaopeng Cheng,  Dabin Yu( )
State Key Laboratory of Pulsed Power Laser Technology,National University of Defense Technology,Hefei,230037,China;
Keywords:
CsPbI3 quantum dots, Ce3+-doped CsPbI3, near-unity photoluminescence quantum yield (PLQY), photoluminescence kinetics
Topics:
Semiconductor doping
Cite this article:
Shu B, Chang Y, Zhang J, et al. Synthesis and photoluminescence kinetics of Ce3+-doped CsPbI3 QDs with near-unity PLQY. Nano Research, 2021, 14(10): 3352-3357. https://doi.org/10.1007/s12274-021-3649-8
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Abstract Full text Electronic supplementary material About this article

CsPbI3 perovskite quantum dots (QDs) have great potential in optoelectronic devices due to their suitable band-gaps, but low photoluminescence quantum yields (PLQYs) and poor phase stability seriously impede their practical application. This paper reports the synthesis of Ce3+-doped CsPbI3 QDs by a hot injection method. In the presence of the dopant (Ce3+), the highest PLQY of CsPbI3 QDs reached 99%, i.e., near-unity PLQY, and the photoluminescence (PL) emission of CsPbI3 QDs could be well maintained compared to that of the undoped ones. The photoluminescence kinetics of Ce3+-doped CsPbI3 QDs was investigated by the ultrafast transient absorption technologies, which exhibited that the Ce3+ not only increased the density of excitonic states close to the high energy excitonic states (HES), but also provided more emissive channels. Moreover, the radiative recombination rates calculated by the combination of PL lifetime and PLQY further illustrated the Pb2+ vacancies were filled with Ce3+ ions so that the PL quenching of the CsPbI3 QDs could be effectively prevented. The theoretic analysis uncovered the mechanism of the high PLQY and stable PL emission of the Ce3+-doped CsPbI3 QDs.


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Electronic supplementary material
About this article

Synthesis and photoluminescence kinetics of Ce3+-doped CsPbI3 QDs with near-unity PLQY

Show Author's information Bowang Shu, Yajing Chang, Jinhua Zhang, Xiaopeng Cheng, Dabin Yu( )
State Key Laboratory of Pulsed Power Laser Technology,National University of Defense Technology,Hefei,230037,China;

Abstract

CsPbI3 perovskite quantum dots (QDs) have great potential in optoelectronic devices due to their suitable band-gaps, but low photoluminescence quantum yields (PLQYs) and poor phase stability seriously impede their practical application. This paper reports the synthesis of Ce3+-doped CsPbI3 QDs by a hot injection method. In the presence of the dopant (Ce3+), the highest PLQY of CsPbI3 QDs reached 99%, i.e., near-unity PLQY, and the photoluminescence (PL) emission of CsPbI3 QDs could be well maintained compared to that of the undoped ones. The photoluminescence kinetics of Ce3+-doped CsPbI3 QDs was investigated by the ultrafast transient absorption technologies, which exhibited that the Ce3+ not only increased the density of excitonic states close to the high energy excitonic states (HES), but also provided more emissive channels. Moreover, the radiative recombination rates calculated by the combination of PL lifetime and PLQY further illustrated the Pb2+ vacancies were filled with Ce3+ ions so that the PL quenching of the CsPbI3 QDs could be effectively prevented. The theoretic analysis uncovered the mechanism of the high PLQY and stable PL emission of the Ce3+-doped CsPbI3 QDs.

Keywords: CsPbI3 quantum dots, Ce3+-doped CsPbI3, near-unity photoluminescence quantum yield (PLQY), photoluminescence kinetics

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Publication history
Copyright
Acknowledgements

Publication history

Received: 31 March 2021
Revised: 24 May 2021
Accepted: 02 June 2021
Published: 02 July 2021
Issue date: October 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgement

This work was finanicially supported by the Key Research and Development Project of Anhui Province of China (No. 1704a0902023), and the Open Research Fund of State Key Laboratory of Plused Power Laser Technology (No. SKL2019KF09). The authors would like to thank Chao Wang from Shiyanjia Lab (www.shiyanjia.com) for test of fs-TA.

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