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Nano Research 2022, 15(2): 1013-1019 https://doi.org/10.1007/s12274-021-3589-3
Research Article | Issue | Published: 23 July 2021

Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment

Show Author's Information Hui-Juan Yan1,3,  Zongbao Li2( ),  Shun-Chang Liu1,3,  Xia Wang2,  Xing Zhang1,3,  Ding-Jiang Xue1,3( ),  Jin-Song Hu1,3
Beijing National Laboratory for Molecular Sciences (BNLMS) CAS Key Laboratory of Molecular Nanostructure and Nanotechnology Institute of ChemistryChinese Academy of Sciences Beijing 100190 China
School of Material and Chemical Engineering Institute of Cultural and Technological Industry Innovation of Tongren Tongren University Tongren 554300 China
University of Chinese Academy of Sciences Beijing 100049 China
Keywords:
two-dimensional, temperature coefficient, interlayer coupling, GeS2
Topics:
Semiconductor devices
Cite this article:
Yan H-J, Li Z, Liu S-C, et al. Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment. Nano Research, 2022, 15(2): 1013-1019. https://doi.org/10.1007/s12274-021-3589-3
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Abstract Full text Electronic supplementary material About this article

Interlayer coupling as a unique feature for two-dimensional (2D) materials may influence their thickness-dependent physical properties, especially the bandgap due to quantum confinement effect. Widely-studied 2D materials usually possess strong interlayer coupling such as most of transition metal dichalcogenides (TMDs), PtS2 and so on. However, 2D materials with weak interlayer coupling are rarely referred that mainly focus on ReS2, as well as its counterpart ReSe2. Here we report a new member of weak interlayer coupling 2D materials, germanium disulfide (GeS2). The interlayer interaction in GeS2 is investigated from theory to experiment. By density functional theory calculations, we find that this extraordinarily weak interlayer coupling in GeS2 originates from the weak hybridization of interlayer S atoms. Thickness-dependent Raman spectra of GeS2 flakes exhibit that the Raman peaks remain unchanged when increasing the thickness; and a small first-order temperature coefficient of –0.00857 cm−1·K−1 is obtained from the temperature-dependent Raman spectra. These experimental results further confirm the weak interlayer coupling in GeS2.


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Electronic supplementary material
About this article

Investigation of weak interlayer coupling in 2D layered GeS2 from theory to experiment

Show Author's information Hui-Juan Yan1,3, Zongbao Li2( ), Shun-Chang Liu1,3, Xia Wang2, Xing Zhang1,3, Ding-Jiang Xue1,3( ), Jin-Song Hu1,3
Beijing National Laboratory for Molecular Sciences (BNLMS) CAS Key Laboratory of Molecular Nanostructure and Nanotechnology Institute of ChemistryChinese Academy of Sciences Beijing 100190 China
School of Material and Chemical Engineering Institute of Cultural and Technological Industry Innovation of Tongren Tongren University Tongren 554300 China
University of Chinese Academy of Sciences Beijing 100049 China

Abstract

Interlayer coupling as a unique feature for two-dimensional (2D) materials may influence their thickness-dependent physical properties, especially the bandgap due to quantum confinement effect. Widely-studied 2D materials usually possess strong interlayer coupling such as most of transition metal dichalcogenides (TMDs), PtS2 and so on. However, 2D materials with weak interlayer coupling are rarely referred that mainly focus on ReS2, as well as its counterpart ReSe2. Here we report a new member of weak interlayer coupling 2D materials, germanium disulfide (GeS2). The interlayer interaction in GeS2 is investigated from theory to experiment. By density functional theory calculations, we find that this extraordinarily weak interlayer coupling in GeS2 originates from the weak hybridization of interlayer S atoms. Thickness-dependent Raman spectra of GeS2 flakes exhibit that the Raman peaks remain unchanged when increasing the thickness; and a small first-order temperature coefficient of –0.00857 cm−1·K−1 is obtained from the temperature-dependent Raman spectra. These experimental results further confirm the weak interlayer coupling in GeS2.

Keywords: two-dimensional, temperature coefficient, interlayer coupling, GeS2

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Publication history
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Acknowledgements

Publication history

Received: 09 March 2021
Revised: 26 April 2021
Accepted: 13 May 2021
Published: 23 July 2021
Issue date: February 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work is supported by the National Natural Science Foundation of China (Nos. 21922512, 21972147, 21875264, 61725401, and 11964032), the Youth Innovation Promotion Association CAS (No. 2017050), the National Natural Science Foundation of Guizhou Province (Nos. KY[2019]060, [2020]123, and trxyDH1905).

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