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Two-dimensional materials have been demonstrated as promising toolboxes for optoelectronics. Transition metal carbides and nitrides (MXenes), members of an emerging family of two-dimensional materials, have drawn extensive attention in optoelectronics owing to their excellent conductivity and tunable electronic properties. Herein, a photodetector based on the two-dimensional van der Waals heterostructure of Ti3C2Tx MXene and a MoS2 monolayer was constructed to observe the ambipolar photoresponse, which showed a positive photoresponse in the visible spectrum (500–700 nm) and a negative photoresponse at longer wavelengths (700–800 nm). The device exhibited a high negative responsivity of 1.9 A/W and a detectivity of 2.1 × 1010 Jones under 750 nm light illumination. Detailed experiments demonstrate that the negative photoresponse arises from the heterostructure- induced trap energy level, which confines the excited photoelectrons and leads to an inverse current. This work demonstrates a unique optoelectronic phenomenon in MoS2/MXene heterostructures and provides valuable insights into the development of new photodetection materials.
We gratefully acknowledge the support from the National Natural Science Foundation of China (Nos. 21971172 and 21671141), the Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions for Optical Engineering in Soochow University, and Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering in Changzhou University (No. RC-ICRS/15-16/02 (HKBU)).