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Nano Research 2022, 15(1): 401-407 https://doi.org/10.1007/s12274-021-3492-y
Research Article | Issue | Published: 01 June 2021

Anisotropic in-plane thermal conductivity for multi-layer WTe2

Show Author's Information Yuehua Wei1,§,  Chuyun Deng2,§,  Xiaoming Zheng3,  Yangbo Chen3,  Xiangzhe Zhang1,  Wei Luo2,  Yi Zhang2,  Gang Peng2,  Jinxin Liu4,  Han Huang4,  Weiwei Cai3,5,  Qi Ge5,  Renyan Zhang1( ),  Xueao Zhang3( ),  Shiqiao Qin1( )
College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073 China
College of Arts and Sciences National University of Defense TechnologyChangsha 410073 China
College of Physical Science and Technology Xiamen UniversityXiamen 361005 China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and Electronics Central South UniversityChangsha 410083 China
Chongqing 2D Materials Institute Liangjiang New AreaChongqing 400714 China

§ Yuehua Wei and Chuyun Deng contributed equally to this work.

Keywords:
anisotropy, Raman spectrum, WTe2, in-plane thermal conductivity, Raman thermometry with electrical heating
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Wei Y, Deng C, Zheng X, et al. Anisotropic in-plane thermal conductivity for multi-layer WTe2. Nano Research, 2022, 15(1): 401-407. https://doi.org/10.1007/s12274-021-3492-y
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Abstract Full text Electronic supplementary material About this article

Improving thermal transport between substrate and transistors has become a vital solution to the thermal challenge in nanoelectronics. Recently 2D WTe2 has sparked extensive interest because of heavy atomic mass and low Debye temperature. Here, the thermal transport of supported WTe2 was studied via Raman thermometry with electrical heating. The supported 30 nm WTe2 encased with 70 nm Al2O3 delivered 4.8 W·m-1·K-1 in-plane thermal conductivity along zigzag direction at room temperature, which was almost 1.6 times larger than that along armchair direction (3.0 W·m-1·K-1). Interestingly, the superior and inferior directions for thermal transport are just opposite of those for electrical transport. Hence, a heat manipulation model in WTe2 FET device was proposed. Within the designed configuration, waste heat in WTe2 would be mostly dissipated to metal contacts located along zigzag, relieving the local temperature discrepancy in the channel effectively and preventing degradation or breakdown. Our study provides new insight into thermal transport of anisotropic 2D materials, which might inspire energy-efficient nanodevices in the future.


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About this article

Anisotropic in-plane thermal conductivity for multi-layer WTe2

Show Author's information Yuehua Wei1,§, Chuyun Deng2,§, Xiaoming Zheng3, Yangbo Chen3, Xiangzhe Zhang1, Wei Luo2, Yi Zhang2, Gang Peng2, Jinxin Liu4, Han Huang4, Weiwei Cai3,5, Qi Ge5, Renyan Zhang1( ), Xueao Zhang3( ), Shiqiao Qin1( )
College of Advanced Interdisciplinary Studies National University of Defense TechnologyChangsha 410073 China
College of Arts and Sciences National University of Defense TechnologyChangsha 410073 China
College of Physical Science and Technology Xiamen UniversityXiamen 361005 China
Hunan Key Laboratory of Super-microstructure and Ultrafast Process School of Physics and Electronics Central South UniversityChangsha 410083 China
Chongqing 2D Materials Institute Liangjiang New AreaChongqing 400714 China

§ Yuehua Wei and Chuyun Deng contributed equally to this work.

Abstract

Improving thermal transport between substrate and transistors has become a vital solution to the thermal challenge in nanoelectronics. Recently 2D WTe2 has sparked extensive interest because of heavy atomic mass and low Debye temperature. Here, the thermal transport of supported WTe2 was studied via Raman thermometry with electrical heating. The supported 30 nm WTe2 encased with 70 nm Al2O3 delivered 4.8 W·m-1·K-1 in-plane thermal conductivity along zigzag direction at room temperature, which was almost 1.6 times larger than that along armchair direction (3.0 W·m-1·K-1). Interestingly, the superior and inferior directions for thermal transport are just opposite of those for electrical transport. Hence, a heat manipulation model in WTe2 FET device was proposed. Within the designed configuration, waste heat in WTe2 would be mostly dissipated to metal contacts located along zigzag, relieving the local temperature discrepancy in the channel effectively and preventing degradation or breakdown. Our study provides new insight into thermal transport of anisotropic 2D materials, which might inspire energy-efficient nanodevices in the future.

Keywords: anisotropy, Raman spectrum, WTe2, in-plane thermal conductivity, Raman thermometry with electrical heating

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Publication history
Copyright
Acknowledgements

Publication history

Received: 05 January 2021
Revised: 28 February 2021
Accepted: 05 April 2021
Published: 01 June 2021
Issue date: January 2022

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2021

Acknowledgements

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 61801498, 11404399, 11874423, and 51701237), the National Defense Science and Technology Innovation Zone, the Scientific Researches Foundation of National University of Defense Technology (Nos. ZK18-01-03, ZK18-03-36, ZK20-16, and ZZKY-YX-08-06), the China Postdoctoral Science Foundation (CPSF) (No. 2019M663569), and the Youth Talent Lifting Project (No. 17-JCJQ-QT-004).

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