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Nano Research 2021, 14(6): 1973-1979 https://doi.org/10.1007/s12274-021-3346-7
Research Article | Issue | Published: 03 March 2021

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

Show Author's Information Di Wu1,  Zhihui Zhao1,  Wei Lu2,  Lukas Rogée2,  Longhui Zeng2( ),  Pei Lin1,  Zhifeng Shi1,  Yongtao Tian1,  Xinjian Li1,  Yuen Hong Tsang2( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
Keywords:
photodetectors, β-Ga2O3, platinum diselenide, solar-blind, deep ultraviolet imaging
Topics:
Photodetectors
Cite this article:
Wu D, Zhao Z, Lu W, et al. Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed. Nano Research, 2021, 14(6): 1973-1979. https://doi.org/10.1007/s12274-021-3346-7
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Abstract Full text Electronic supplementary material About this article

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV) photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga2O3 nanostructures have been developed, their practical applications are greatly limited by their slow response speed as well as low specific detectivity. Here, the successful fabrication of two-/three-dimensional (2D/3D) graphene (Gr)/PtSe2/β-Ga2O3 Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated. Benefitting from the high-quality 2D/3D Schottky junction, the vertically stacked structure, and the superior-quality transparent graphene electrode for effective carrier collection, the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W, a large on/off current ratio of ~ 105, along with an ultra-high ultraviolet (UV)/visible rejection ratio of 1.8 × 104. More importantly, it has an ultra-fast response time of 12 μs and a remarkable specific detectivity of ~ 1013 Jones. Finally, an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga2O3 Schottky junction photodetector, demonstrating its great potential application in DUV imaging systems.


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Electronic supplementary material
About this article

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

Show Author's information Di Wu1, Zhihui Zhao1, Wei Lu2, Lukas Rogée2, Longhui Zeng2( ), Pei Lin1, Zhifeng Shi1, Yongtao Tian1, Xinjian Li1, Yuen Hong Tsang2( )
School of Physics and Microelectronics, and Key Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China

Abstract

There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV) photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga2O3 nanostructures have been developed, their practical applications are greatly limited by their slow response speed as well as low specific detectivity. Here, the successful fabrication of two-/three-dimensional (2D/3D) graphene (Gr)/PtSe2/β-Ga2O3 Schottky junction devices for high-sensitivity solar-blind DUV photodetectors is demonstrated. Benefitting from the high-quality 2D/3D Schottky junction, the vertically stacked structure, and the superior-quality transparent graphene electrode for effective carrier collection, the photodetector is highly sensitive to DUV light illumination and achieves a high responsivity of 76.2 mA/W, a large on/off current ratio of ~ 105, along with an ultra-high ultraviolet (UV)/visible rejection ratio of 1.8 × 104. More importantly, it has an ultra-fast response time of 12 μs and a remarkable specific detectivity of ~ 1013 Jones. Finally, an excellent DUV imaging capability has been identified based on the Gr/PtSe2/β-Ga2O3 Schottky junction photodetector, demonstrating its great potential application in DUV imaging systems.

Keywords: photodetectors, β-Ga2O3, platinum diselenide, solar-blind, deep ultraviolet imaging

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Publication history
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Acknowledgements

Publication history

Received: 04 November 2020
Revised: 29 December 2020
Accepted: 19 January 2021
Published: 03 March 2021
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (Nos. U2004165, 51702017, and 11974016), the Natural Science Foundation of Henan Province, China (No. 202300410376) and Research Grants Council of Hong Kong, China (No. GRF 152093/18E PolyU B-Q65N).

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