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Nano Research 2021, 14(6): 1734-1751 https://doi.org/10.1007/s12274-020-3253-3
Review Article | Issue | Published: 08 December 2020

The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides

Show Author's Information Baishan Liu1,2,§,  Junli Du1,2,§,  Huihui Yu1,2,  Mengyu Hong1,2,  Zhuo Kang1,2,  Zheng Zhang1,2( ),  Yue Zhang1,2( )
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

§ Baishan Liu and Junli Du contributed equally to this work.

Keywords:
van der Waals heterostructures, transition metal dichalcogenide materials, structure-property characterization, interfacial behaviors, microscopy techniques, optical spectroscopy techniques.
Topics:
HeterojunctionsTransition metals
Cite this article:
Liu B, Du J, Yu H, et al. The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides. Nano Research, 2021, 14(6): 1734-1751. https://doi.org/10.1007/s12274-020-3253-3
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Abstract Full text About this article

van der Waals (vdW) heterostructures based on two-dimensional (2D) materials holding design-by-demand features offer astonishing opportunities to construct novel electronics and optoelectronics devices due to the vdW force interaction between their stacked components. At the atomically thin confinement, vdW heterostructure not only exhibits unprecedented properties as an entire counterpart, but also provides unique platforms to manipulate the vdW interfacial behaviors. Therefore, developing characterization techniques to comprehensively understand the coupling effect on structure-property-performance relationship of vdW heterostructures is crucial for fundamental science and practical applications. Here, we focus on the most widely studied 2D semiconductor transition metal dichalcogenides (TMDCs) and systematically review significant advances in characterizing the material and interfacial coupling effect of the related vdW heterostructures. Specially, we will discuss microscopy techniques for unveiling the structure-property relationship of vdW heterostructures and optical spectroscopy measurements for analyzing vdW interfacial coupling effect. Finally, we address some promising strategies to optimize characterization technologies for resolving vdW heterostructures, including coupling multiple characterization technologies, improving temporal and spatial resolution, developing fast, efficient, and non-destructive techniques and introducing artificial intelligence.


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About this article

The coupling effect characterization for van der Waals structures based on transition metal dichalcogenides

Show Author's information Baishan Liu1,2,§, Junli Du1,2,§, Huihui Yu1,2, Mengyu Hong1,2, Zhuo Kang1,2, Zheng Zhang1,2( ), Yue Zhang1,2( )
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

§ Baishan Liu and Junli Du contributed equally to this work.

Abstract

van der Waals (vdW) heterostructures based on two-dimensional (2D) materials holding design-by-demand features offer astonishing opportunities to construct novel electronics and optoelectronics devices due to the vdW force interaction between their stacked components. At the atomically thin confinement, vdW heterostructure not only exhibits unprecedented properties as an entire counterpart, but also provides unique platforms to manipulate the vdW interfacial behaviors. Therefore, developing characterization techniques to comprehensively understand the coupling effect on structure-property-performance relationship of vdW heterostructures is crucial for fundamental science and practical applications. Here, we focus on the most widely studied 2D semiconductor transition metal dichalcogenides (TMDCs) and systematically review significant advances in characterizing the material and interfacial coupling effect of the related vdW heterostructures. Specially, we will discuss microscopy techniques for unveiling the structure-property relationship of vdW heterostructures and optical spectroscopy measurements for analyzing vdW interfacial coupling effect. Finally, we address some promising strategies to optimize characterization technologies for resolving vdW heterostructures, including coupling multiple characterization technologies, improving temporal and spatial resolution, developing fast, efficient, and non-destructive techniques and introducing artificial intelligence.

Keywords: van der Waals heterostructures, transition metal dichalcogenide materials, structure-property characterization, interfacial behaviors, microscopy techniques, optical spectroscopy techniques.

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Publication history
Copyright
Acknowledgements

Publication history

Received: 28 September 2020
Revised: 16 November 2020
Accepted: 19 November 2020
Published: 08 December 2020
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Nos. 51991340, 51991342, 51527802, 51972022, 51722203, and 51672026), the Overseas Expertise Introduction Projects for Discipline Innovation (No. B14003), the National Key Research and Development Program of China (No. 2016YFA0202701 and 2018YFA0703503), the Natural Science Foundation of Beijing Municipality (No. Z180011), and the Fundamental Research Funds for the Central Universities (Nos. FRF-TP-18-004A2 and FRF-TP-18-001C1).

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