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05 July 2021
Carrier mobility tuning of MoS2 by strain engineering in CVD growth process
Xiaoqing Chen1(
),
Yongzhe Zhang1(
)
),
Yongzhe Zhang1(
)
Topics:
Chemical vapor depositionDensity functional theoryEnergy gapLayered semiconductorsMolybdenum compoundsMonolayersTransition metals
Cite this article:
Chen Y, Deng W, Chen X, et al.
Carrier mobility tuning of MoS2 by strain engineering in CVD growth process.
Nano Research,
2021, 14(7): 2314-2320.
https://doi.org/10.1007/s12274-020-3228-4
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Strain engineering is proposed to be an effective technology to tune the properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Conventional strain engineering techniques (e.g., mechanical bending, heating) cannot conserve strain due to their dependence on external action, which thereby limits the application in electronics. In addition, the theoretically predicted strain-induced tuning of electrical performance of TMDCs has not been experimentally proved yet. Here, a facile but effective approach is proposed to retain and tune the biaxial tensile strain in monolayer MoS2 by adjusting the process of the chemical vapor deposition (CVD). To prove the feasibility of this method, the strain formation model of CVD grown MoS2 is proposed which is supported by the calculated strain dependence of band gap via the density functional theory (DFT). Next, the electrical properties tuning of strained monolayer MoS2 is demonstrated in experiment, where the carrier mobility of MoS2 was increased by two orders (~ 0.15 to ~ 23 cm2·V-1·s-1). The proposed pathway of strain preservation and regulation will open up the optics application of strain engineering and the fabrication of high performance electronic devices in 2D materials.
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Carrier mobility tuning of MoS2 by strain engineering in CVD growth process
Xiaoqing Chen1(
), Yongzhe Zhang1(
)
), Yongzhe Zhang1(
)
Abstract
Strain engineering is proposed to be an effective technology to tune the properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Conventional strain engineering techniques (e.g., mechanical bending, heating) cannot conserve strain due to their dependence on external action, which thereby limits the application in electronics. In addition, the theoretically predicted strain-induced tuning of electrical performance of TMDCs has not been experimentally proved yet. Here, a facile but effective approach is proposed to retain and tune the biaxial tensile strain in monolayer MoS2 by adjusting the process of the chemical vapor deposition (CVD). To prove the feasibility of this method, the strain formation model of CVD grown MoS2 is proposed which is supported by the calculated strain dependence of band gap via the density functional theory (DFT). Next, the electrical properties tuning of strained monolayer MoS2 is demonstrated in experiment, where the carrier mobility of MoS2 was increased by two orders (~ 0.15 to ~ 23 cm2·V-1·s-1). The proposed pathway of strain preservation and regulation will open up the optics application of strain engineering and the fabrication of high performance electronic devices in 2D materials.
Keywords:
MoS2, 2D materials, strain engineering, CVD, carrier mobility
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Publication history
Copyright
Acknowledgements
Publication history
Received: 07 January 2020
Revised: 30 October 2020
Accepted: 09 November 2020
Published:
05 July 2021
Issue date: July 2021
Copyright
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020
Acknowledgements
This work was financially supported by the National Science Foundation of China (Nos. 61922005, U1930105, 21673054 and 11874130), Beijing Natural Science Foundation (No. JQ20027), the Beijing Excellent Talent Program, the Equipment Pre-research Project of China Electronics Technology Group Corporation (CETC) (No. 6141B08110104), and the General Program of Science and Technology Development Project of Beijing Municipal Education Commission (No. KM202010005005). All authors thank Prof. Danmin Liu, Prof. Hui Yan, Yang Ma and Peng Wang for disscussion.
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