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Nano Research 2021, 14(7): 2207-2214 https://doi.org/10.1007/s12274-020-3185-y
Research Article | Issue | Published: 05 July 2021

Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS2 field-effect transistor

Show Author's Information Jae Young Park2,§,  SangHyuk Yoo1,§,  Byeongho Park3,  Taekyeong Kim4,  Young Tea Chun5,  Jong Min Kim6,  Keonwook Kang1( ),  Soo Hyun Lee2( ),  Seong Chan Jun1( )
Department of Mechanical Engineering, Yonsei University, Seoul 03722, Republic of Korea
Center for Biomicrosystem, Brain Science Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Sensor System Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Department of Physics, Hankuk University of Foreign Studies, Yongin 17035, Republic of Korea
Division of Electronics and Electrical Information Engineering, Korea Maritime and Ocean University, Busan 49112, Republic of Korea
Electrical Engineering Division Engineering Department, University of Cambridge, Cambridge, CB3 OFA, UK

§ Jae Young Park and SangHyuk Yoo contributed equally to this work.

Keywords:
field-effect transistor, ReS2, Two-dimensional material, TFSI, superacid, dipole
Topics:
Nanoelectronics
Cite this article:
Park JY, Yoo S, Park B, et al. Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS2 field-effect transistor. Nano Research, 2021, 14(7): 2207-2214. https://doi.org/10.1007/s12274-020-3185-y
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Abstract Full text Electronic supplementary material About this article

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules. Prior to the experiment, density functional theory (DFT) calculation was performed, and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2. After TFSI treatment, the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of -0.32-0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS2 FET. Moreover, in the treated O-ReS2 device, the dipole direction was highly influenced by the voltage sweep direction, generating a significant area of hysteresis in I-V and transfer characteristics, which was further verified by the surface potential result. Furthermore, the dipole state was enhanced according to the wavelength of the light source and photocurrent. These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor, memory, and photodetector.


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Electronic supplementary material
About this article

Dipole-assisted carrier transport in bis(trifluoromethane) sulfonamide-treated O-ReS2 field-effect transistor

Show Author's information Jae Young Park2,§, SangHyuk Yoo1,§, Byeongho Park3, Taekyeong Kim4, Young Tea Chun5, Jong Min Kim6, Keonwook Kang1( ), Soo Hyun Lee2( ), Seong Chan Jun1( )
Department of Mechanical Engineering, Yonsei University, Seoul 03722, Republic of Korea
Center for Biomicrosystem, Brain Science Institute, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Sensor System Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
Department of Physics, Hankuk University of Foreign Studies, Yongin 17035, Republic of Korea
Division of Electronics and Electrical Information Engineering, Korea Maritime and Ocean University, Busan 49112, Republic of Korea
Electrical Engineering Division Engineering Department, University of Cambridge, Cambridge, CB3 OFA, UK

§ Jae Young Park and SangHyuk Yoo contributed equally to this work.

Abstract

We demonstrate the dipole-assisted carrier transport properties of bis(trifluoromethane)sulfonamide (TFSI)-treated O-ReS2 field-effect transistors. Pristine ReS2 was compared with defect-mediated ReS2 to confirm whether the presence of defects on the interface enhances the interaction between O-ReS2 and TFSI molecules. Prior to the experiment, density functional theory (DFT) calculation was performed, and the result indicated that the charge transfer between TFSI and O-ReS2 is more sensitive to external electric fields than that between TFSI and pristine ReS2. After TFSI treatment, the drain current of O-ReS2 FET was significantly increased up to 1,113.4 times except in the range of -0.32-0.76 V owing to Schottky barrier modulation from dipole polarization of TFSI molecules, contrary to a significant degradation in device performance in pristine ReS2 FET. Moreover, in the treated O-ReS2 device, the dipole direction was highly influenced by the voltage sweep direction, generating a significant area of hysteresis in I-V and transfer characteristics, which was further verified by the surface potential result. Furthermore, the dipole state was enhanced according to the wavelength of the light source and photocurrent. These results indicate that TFSI-treated ReS2 FET has large potential for use as next-generation memristor, memory, and photodetector.

Keywords: field-effect transistor, ReS2, Two-dimensional material, TFSI, superacid, dipole

References(57)

[1]
Zhang, Y. J.; Oka, T.; Suzuki, R.; Ye, J. T.; Iwasa, Y. Electrically switchable chiral light-emitting transistor. Science 2014, 344, 725-728.
Google Scholar
[2]
Roy, K.; Padmanabhan, M.; Goswami, S.; Sai, T. P.; Ramalingam, G.; Raghavan, S.; Ghosh, A. Graphene-MoS2 hybrid structures for multifunctional photoresponsive memory devices. Nat. Nanotechnol. 2013, 8, 826-830.
Google Scholar
[3]
Chamlagain, B.; Li, Q.; Ghimire, N. J.; Chuang, H. J.; Perera, M. M.; Tu, H. G.; Xu, Y.; Pan, M. H.; Xaio, D.; Yan, J. Q. et al. Mobility improvement and temperature dependence in MoSe2 field-effect transistors on parylene-C substrate. ACS Nano 2014, 8, 5079-5088.
Google Scholar
[4]
Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim, P.; Shepard, K. L. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722-726.
Google Scholar
[5]
Wang, S.; Ang, P. K.; Wang, Z. Q.; Tang, A. L. L.; Thong, J. T. L.; Loh, K. P. High mobility, printable, and solution-processed graphene electronics. Nano Lett. 2010, 10, 92-98.
Google Scholar
[6]
Xia, F. N.; Mueller, T.; Lin, Y. M.; Valdes-Garcia, A.; Avouris, P. Ultrafast graphene photodetector. Nat. Nanotechnol. 2009, 4, 839-843.
Google Scholar
[7]
Radisavljevic, B.; Radenovic, A.; Brivio, J.; Giacometti, V.; Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
Google Scholar
[8]
Larentis, S.; Fallahazad, B.; Tutuc, E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers. Appl. Phys. Lett. 2012, 101, 223104.
Google Scholar
[9]
Das, S.; Appenzeller, J. WSe2 field effect transistors with enhanced ambipolar characteristics. Appl. Phys. Lett. 2013, 103, 103501.
Google Scholar
[10]
Jo, S.; Ubrig, N.; Berger, H.; Kuzmenko, A. B.; Morpurgo, A. F. Mono-and bilayer WS2 light-emitting transistors. Nano Lett. 2014, 14, 2019-2025.
Google Scholar
[11]
Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271-1275.
Google Scholar
[12]
Tongay, S.; Zhou, J.; Ataca, C.; Lo, K.; Matthews, T. S.; Li, J. B.; Grossman, J. C.; Wu, J. Q.Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe2 versus MoS2. Nano Lett. 2012, 12, 5576-5580.
Google Scholar
[13]
Zhao, W. J.; Ribeiro, R. M.; Toh, M.; Carvalho, A.; Kloc, C.; Castro Neto, A. H.; Eda, G. Origin of indirect optical transitions in few-layer MoS2, WS2, and WSe2. Nano Lett. 2013, 13, 5627-5634.
Google Scholar
[14]
Salehzadeh, O.; Tran, N. H.; Liu, X.; Shih, I.; Mi, Z. Exciton kinetics, quantum efficiency, and efficiency droop of monolayer MoS2 light-emitting devices. Nano Lett. 2014, 14, 4125-4130.
Google Scholar
[15]
Eda, G.; Yamaguchi, H.; Voiry, D.; Fujita, T.; Chen, M. W.; Chhowalla, M. Photoluminescence from chemically exfoliated MoS2. Nano Lett. 2011, 11, 5111-5116.
Google Scholar
[16]
Yim, C.; O’Brien, M.; McEvoy, N.; Riazimehr, S.; Schäfer-Eberwein, H.; Bablich, A.; Pawar, R.; Iannaccone, G.; Downing, C.; Fiori, G. et al. Heterojunction hybrid devices from vapor phase grown MoS2. Sci. Rep. 2014, 4, 5458.
Google Scholar
[17]
Tongay, S.; Sahin, H.; Ko, C.; Luce, A.; Fan, W.; Liu, K.; Zhou, J.; Huang, Y. S.; Ho, C. H.; Yan, J. Y. et al. Monolayer behaviour in bulk ReS2 due to electronic and vibrational decoupling. Nat. Commun. 2014, 5, 3252.
Google Scholar
[18]
Kim, S.; Konar, A.; Hwang, W. S.; Lee, J. H.; Lee, J.; Yang, J.; Jung, C.; Kim, H.; Yoo, J. B.; Choi, J. Y. et al. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.
Google Scholar
[19]
Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
Google Scholar
[20]
Qiu, H.; Pan, L. J.; Yao, Z. N.; Li, J. J.; Shi, Y.; Wang, X. R. Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances. Appl. Phys. Lett. 2012, 100, 123104.
Google Scholar
[21]
Komsa, H. P.; Kotakoski, J.; Kurasch, S.; Lehtinen, O.; Kaiser, U.; Krasheninnikov, A. V. Two-dimensional transition metal dichalcogenides under electron irradiation: Defect production and doping. Phys. Rev. Lett. 2012, 109, 035503.
Google Scholar
[22]
Komsa, H. P.; Kurasch, S.; Lehtinen, O.; Kaiser, U.; Krasheninnikov, A. V. From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation. Phys. Rev. B 2013, 88, 035301.
Google Scholar
[23]
Gong, C.; Colombo, L.; Wallace, R. M.; Cho, K. The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfaces. Nano Lett. 2014, 14, 1714-1720.
Google Scholar
[24]
Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831-2836.
Google Scholar
[25]
Mouri, S.; Miyauchi, Y.; Matsuda, K. Tunable photoluminescence of monolayer MoS2 via chemical doping. Nano Lett. 2013, 13, 5944-5948.
Google Scholar
[26]
Peimyoo, N.; Yang, W. H.; Shang, J. Z.; Shen, X. N.; Wang, Y. L.; Yu, T. Chemically driven tunable light emission of charged and neutral excitons in monolayer WS2. ACS Nano 2014, 8, 11320-11329.
Google Scholar
[27]
Amani, M.; Lien, D. H.; Kiriya, D.; Xiao, J.; Azcatl, A.; Noh, J.; Madhvapathy, S. R.; Addou, R.; Santosh, K. C.; Dubey, M. et al. Near-unity photoluminescence quantum yield in MoS2. Science 2015, 350, 1065-1068.
Google Scholar
[28]
Amani, M.; Taheri, P.; Addou, R.; Ahn, G. H.; Kiriya, D.; Lien, D. H.; Ager III, J. W.; Wallace, R. M.; Javey, A. Recombination kinetics and effects of superacid treatment in sulfur-and selenium-based transition metal dichalcogenides. Nano Lett. 2016, 16, 2786-2791.
Google Scholar
[29]
Kim, H.; Lien, D. H.; Amani, M.; Ager, J. W.; Javey, A. Highly stable near-unity photoluminescence yield in monolayer MoS2 by fluoropolymer encapsulation and superacid treatment. ACS Nano 2017, 11, 5179-5185.
Google Scholar
[30]
Hofmann, A. I.; Kroon, R.; Yu, L. Y.; Müller, C. Highly stable doping of a polar polythiophene through co-processing with sulfonic acids and bistriflimide. J. Mater. Chem. C 2018, 6, 6905-6910.
Google Scholar
[31]
Çakır, D.; Sahin, H.; Peeters, F. M. Doping of rhenium disulfide monolayers: A systematic first principles study. Phys. Chem. Chem. Phys. 2014, 16, 16771-16779.
Google Scholar
[32]
Mun, J.; Yim, T.; Park, J. H.; Ryu, J. H.; Lee, S. Y.; Kim, Y. G.; Oh, S. M. Allylic ionic liquid electrolyte-assisted electrochemical surface passivation of LiCoO2 for advanced, safe lithium-ion batteries. Sci. Rep. 2014, 4, 5802.
Google Scholar
[33]
Steiner, T. The hydrogen bond in the solid state. Angew. Chem., Int. Ed. 2002, 41, 48-76.
Google Scholar
[34]
Liang, S. Z.; Chen, G. G.; Harutyunyan, A. R.; Sofo, J. O. Screening of charged impurities as a possible mechanism for conductance change in graphene gas sensing. Phys. Rev. B 2014, 90, 115410.
Google Scholar
[35]
Park, J. Y.; Joe, H. E.; Yoon, H. S.; Yoo, S.; Kim, T.; Kang, K.; Min, B. K.; Jun, S. C. Contact effect of ReS2/metal interface. ACS Appl. Mater. Interfaces 2017, 9, 26325-26332.
Google Scholar
[36]
Mastomäki, J.; Roddaro, S.; Rocci, M.; Zannier, V.; Ercolani, D.; Sorba, L.; Maasilta, I. J.; Ligato, N.; Fornieri, A.; Strambini, E. et al. InAs nanowire superconducting tunnel junctions: Quasiparticle spectroscopy, thermometry, and nanorefrigeration. Nano Res. 2017, 10, 3468-3475.
Google Scholar
[37]
Tian, B. B.; Wang, J. L.; Fusil, S.; Liu, Y.; Zhao, X. L.; Sun, S.; Shen, H.; Lin, T.; Sun, J. L.; Duan, C. G. et al. Tunnel electroresistance through organic ferroelectrics. Nat. Commun. 2016, 7, 11502.
Google Scholar
[38]
Si, M. W.; Su, C. J.; Jiang, C. S.; Conrad, N. J.; Zhou, H.; Maize, K. D.; Qiu, G.; Wu, C. T.; Shakouri, A.; Alam, M. A. Steep-slope hysteresis-free negative capacitance MoS2 transistors. Nat. Nanotechnol. 2018, 13, 24-28.
Google Scholar
[39]
Suda, Y.; Koyama, H. Electron resonant tunneling with a high peak-to-valley ratio at room temperature in Si1-x Gex/Si triple barrier diodes. Appl. Phys. Lett. 2001, 79, 2273-2275.
Google Scholar
[40]
Zhou, J. T.; Kim, K. H.; Lu, W. Crossbar RRAM arrays: Selector device requirements during read operation. IEEE Trans. Electron Dev. 2014, 61, 1369-1376.
Google Scholar
[41]
Zhang, F.; Zhu, Y. Q.; Appenzeller, J. Novel two-terminal vertical transition metal dichalcogenide based memory selectors. In Proceedings of the 75th Annual Device Research Conference (DRC), South Bend, IN, USA, 2017, pp 1-2.
[42]
Wang, H. M.; Wu, Y. H.; Cong, C. X.; Shang, J. Z.; Yu, T. Hysteresis of electronic transport in graphene transistors. ACS Nano 2010, 4, 7221-7228.
Google Scholar
[43]
Wang, M.; Zhou, J. T.; Yang, Y. C.; Gaba, S.; Liu, M.; Lu, W. D. Conduction mechanism of a TaOx-based selector and its application in crossbar memory arrays. Nanoscale 2015, 7, 4964-4970.
Google Scholar
[44]
Horiuchi, S.; Yamaguchi, J.; Naito, K. Electric conduction through thin insulating Langmuir film. J. Electrochem. Soc. 1968, 115, 634-637.
Google Scholar
[45]
Zaumseil, J.; Sirringhaus, H. Electron and ambipolar transport in organic field-effect transistors. Chem. Rev. 2007, 107, 1296-1323.
Google Scholar
[46]
Wang, X. D.; Wang, P.; Wang, J. L.; Hu, W. D.; Zhou, X. H.; Guo, N.; Huang, H.; Sun, S.; Shen, H.; Lin, T. et al. Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics. Adv. Mater. 2015, 27, 6575-6581.
Google Scholar
[47]
Zhang, E. Z.; Wang, P.; Li, Z.; Wang, H. F.; Song, C. Y.; Huang, C.; Chen, Z. G.; Yang, L.; Zhang, K. T.; Lu, S. H. et al. Tunable ambipolar polarization-sensitive photodetectors based on high-anisotropy ReSe2 nanosheets. ACS Nano 2016, 10, 8067-8077.
Google Scholar
[48]
Strelcov, E.; Ievlev, A. V.; Jesse, S.; Kravchenko, I. I.; Shur, V. Y.; Kalinin, S. V. Direct probing of charge injection and polarization- controlled ionic mobility on ferroelectric LiNbO3 surfaces. Adv. Mater. 2014, 26, 958-963.
Google Scholar
[49]
Kresse, G.; Furthmüller, J. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set. Phys. Rev. B 1996, 54, 11169-11186.
Google Scholar
[50]
Kresse, G.; Furthmüller, J. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set. Comput. Mater. Sci. 1996, 6, 15-50.
Google Scholar
[51]
Kresse, G.; Hafner, J. Ab initio molecular-dynamics simulation of the liquid-metal-amorphous-semiconductor transition in germanium. Phys. Rev. B 1994, 49, 14251-14269.
Google Scholar
[52]
Kresse, G.; Hafner, J. Ab initio molecular dynamics for liquid metals. Phys. Rev. B 1993, 47, 558-561.
Google Scholar
[53]
Kresse, G.; Joubert, D. From ultrasoft pseudopotentials to the projector augmented-wave method. Phys. Rev. B 1999, 59, 1758-1775.
Google Scholar
[54]
Perdew, J. P.; Burke, K.; Ernzerhof, M. Generalized gradient approximation made simple. Phys. Rev. Lett. 1996, 77, 3865-3868.
Google Scholar
[55]
Grimme, S.; Antony, J.; Ehrlich, S.; Krieg, H. A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu. J. Chem. Phys. 2010, 132, 154104.
Google Scholar
[56]
Momma, K.; Izumi, F. VESTA 3 for three-dimensional visualization of crystal, volumetric and morphology data. J. Appl. Cryst. 2011, 44, 1272-1276.
Google Scholar
[57]
Henkelman, G.; Arnaldsson, A.; Jónsson, H. A fast and robust algorithm for Bader decomposition of charge density. Comput. Mater. Sci. 2006, 36, 354-360.
Google Scholar
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Publication history
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Acknowledgements

Publication history

Received: 29 July 2020
Revised: 10 October 2020
Accepted: 15 October 2020
Published: 05 July 2021
Issue date: July 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

This work was supported by the national research foundation of Korea (NRF) grant funded by the Korea government (MIST) (Nos. NRF-2019R1A2C2090443, NRF-2017M3A7B4041987, NRF-2020M3F6A1081009, and NRF-2017M1A3A3A02015033) and Korea Electric Power Corporation. (Grant No. R19XO01-23).

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