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Nano Research 2021, 14(4): 982-991 https://doi.org/10.1007/s12274-020-3137-6
Research Article | Issue | Published: 03 November 2020

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Show Author's Information Bingxu Liu1,  Yinghui Sun1( ),  Yonghuang Wu2,  Kai Liu2,  Huanyu Ye1,  Fangtao Li1,  Limeng Zhang1,  Yong Jiang3,  Rongming Wang1( )
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
Keywords:
MoS2, heterojunction, photodetector, charge injection, photocurrent
Topics:
Charge transferLayered semiconductorsMolybdenum compoundsOptoelectronic devicesOxide mineralsPhototransistorsTitanium Dioxide
Cite this article:
Liu B, Sun Y, Wu Y, et al. Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating. Nano Research, 2021, 14(4): 982-991. https://doi.org/10.1007/s12274-020-3137-6
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) MoS2 with appealing physical properties is a promising candidate for next-generation electronic and optoelectronic devices, where the ultrathin MoS2 is usually laid on or gated by a dielectric oxide layer. The oxide/MoS2 interfaces widely existing in these devices have significant impacts on the carrier transport of the MoS2 channel by diverse interface interactions. Artificial design of the oxide/MoS2 interfaces would provide an effective way to break through the performance limit of the 2D devices but has yet been well explored. Here, we report a high-performance MoS2-based phototransistor with an enhanced photoresponse by interfacing few-layer MoS2 with an ultrathin TiO2 layer. The TiO2 is deposited on MoS2 through the oxidation of an e-beam-evaporated ultrathin Ti layer. Upon a visible-light illumination, the fabricated TiO2/MoS2 phototransistor exhibits a responsivity of up to 2,199 A/W at a gate voltage of 60 V and a detectivity of up to 1.67 × 1013 Jones at a zero-gate voltage under a power density of 23.2 μW/mm2. These values are 4.0 and 4.2 times those of the pure MoS2 phototransistor. The significantly enhanced photoresponse of TiO2/MoS2 device can be attributed to both interface charge transfer and photogating effects. Our results not only provide valuable insights into the interactions at TiO2/MoS2 interface, but also may inspire new approach to develop other novel optoelectronic devices based on 2D layered materials.


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Electronic supplementary material
About this article

Enhanced photoresponse of TiO2/MoS2 heterostructure phototransistors by the coupling of interface charge transfer and photogating

Show Author's information Bingxu Liu1, Yinghui Sun1( ), Yonghuang Wu2, Kai Liu2, Huanyu Ye1, Fangtao Li1, Limeng Zhang1, Yong Jiang3, Rongming Wang1( )
Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, School of Mathematics and Physics, University of Science and Technology Beijing, Beijing 100083, China
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China

Abstract

Two-dimensional (2D) MoS2 with appealing physical properties is a promising candidate for next-generation electronic and optoelectronic devices, where the ultrathin MoS2 is usually laid on or gated by a dielectric oxide layer. The oxide/MoS2 interfaces widely existing in these devices have significant impacts on the carrier transport of the MoS2 channel by diverse interface interactions. Artificial design of the oxide/MoS2 interfaces would provide an effective way to break through the performance limit of the 2D devices but has yet been well explored. Here, we report a high-performance MoS2-based phototransistor with an enhanced photoresponse by interfacing few-layer MoS2 with an ultrathin TiO2 layer. The TiO2 is deposited on MoS2 through the oxidation of an e-beam-evaporated ultrathin Ti layer. Upon a visible-light illumination, the fabricated TiO2/MoS2 phototransistor exhibits a responsivity of up to 2,199 A/W at a gate voltage of 60 V and a detectivity of up to 1.67 × 1013 Jones at a zero-gate voltage under a power density of 23.2 μW/mm2. These values are 4.0 and 4.2 times those of the pure MoS2 phototransistor. The significantly enhanced photoresponse of TiO2/MoS2 device can be attributed to both interface charge transfer and photogating effects. Our results not only provide valuable insights into the interactions at TiO2/MoS2 interface, but also may inspire new approach to develop other novel optoelectronic devices based on 2D layered materials.

Keywords: MoS2, heterojunction, photodetector, charge injection, photocurrent

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Publication history
Copyright
Acknowledgements

Publication history

Received: 20 July 2020
Revised: 22 September 2020
Accepted: 22 September 2020
Published: 03 November 2020
Issue date: April 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was supported by the National Key Research and Development Program of China (No. 2018YFA0703700), the National Natural Science Foundation of China (Nos. 11974041 and 51971025), 111 Project (No. B170003), and the Fundamental Research Funds for the Central Universities (No. FRF-BD- 19-016A).

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