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Nano Research 2021, 14(5): 1280-1286 https://doi.org/10.1007/s12274-020-3106-0
Research Article | Issue | Published: 29 December 2020

Ion implantation assisted synthesis of graphene on various dielectric substrates

Show Author's Information Yunbiao Zhao,  Yue li,  Yi Chen,  Yuhan Chen,  Danqing Zhou,  Ziqiang Zhao( )
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China
Keywords:
graphene, chemical vapor deposition (CVD), ion implantation, dielectric substrates
Topics:
Film growthGrapheneSilicaSilicon
Cite this article:
Zhao Y, li Y, Chen Y, et al. Ion implantation assisted synthesis of graphene on various dielectric substrates. Nano Research, 2021, 14(5): 1280-1286. https://doi.org/10.1007/s12274-020-3106-0
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Abstract Full text Electronic supplementary material About this article

Direct synthesis of high-quality graphene on dielectric substrates is of great importance for the application of graphene-based electronics and optoelectronics. However, high-quality and uniform graphene film growth on dielectric substrates has proven challenging due to limited catalytic ability of dielectric substrates. Here, by employing a Cu ion implantation assisted method, high-quality and uniform graphene can be directly formed on various dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. The growth rate of graphene on the dielectric substrates was significantly improved due to the catalysis of Cu. Moreover, during the graphene growth process, the Cu atoms gradually evaporated away without involving any metal contamination. Furthermore, an interesting growth behavior of graphene on sapphire substrate was observed, and the results show the graphene domains growth tends to grow along the sapphire flat terraces. The ion implantation assisted approach could open up a new pathway for the direct synthesis of graphene and promote the potential application of graphene in electronics.


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Abstract
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Electronic supplementary material
About this article

Ion implantation assisted synthesis of graphene on various dielectric substrates

Show Author's information Yunbiao Zhao, Yue li, Yi Chen, Yuhan Chen, Danqing Zhou, Ziqiang Zhao( )
State Key Laboratory of Nuclear Physics and Technology, School of Physics, Peking University, Beijing 100871, China

Abstract

Direct synthesis of high-quality graphene on dielectric substrates is of great importance for the application of graphene-based electronics and optoelectronics. However, high-quality and uniform graphene film growth on dielectric substrates has proven challenging due to limited catalytic ability of dielectric substrates. Here, by employing a Cu ion implantation assisted method, high-quality and uniform graphene can be directly formed on various dielectric substrates including SiO2/Si, quartz glass, and sapphire substrates. The growth rate of graphene on the dielectric substrates was significantly improved due to the catalysis of Cu. Moreover, during the graphene growth process, the Cu atoms gradually evaporated away without involving any metal contamination. Furthermore, an interesting growth behavior of graphene on sapphire substrate was observed, and the results show the graphene domains growth tends to grow along the sapphire flat terraces. The ion implantation assisted approach could open up a new pathway for the direct synthesis of graphene and promote the potential application of graphene in electronics.

Keywords: graphene, chemical vapor deposition (CVD), ion implantation, dielectric substrates

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Publication history
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Acknowledgements

Publication history

Received: 29 October 2019
Revised: 01 September 2020
Accepted: 09 September 2020
Published: 29 December 2020
Issue date: May 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was supported by the National Natural Science Foundation of China (NSFC) (No. 11875077). The authors acknowledge the support by the State Key Laboratory and Beijing Radiation Center.

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