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Research Article

Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint

Chaoqi Dai1,2,§, Peiqin Chen2,§, Shaocheng Qi2,§, Yongbin Hu2,§, Zhitang Song3,4( ), Mingzhi Dai2,3( )
College of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Shanghai Microsystem and Information Technology Institute, Chinese Academy of Sciences, Shanghai 200433, China

§ Chaoqi Dai, Peiqin Chen, Shaocheng Qi, and Yongbin Hu contributed equally to this work.

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An erratum to this article is available online at:
https://doi.org/10.1007/s12274-021-3377-0

Graphical Abstract

Abstract

There is a continuous demand to reduce the size of the devices that form a unit circuit, such as logic gates and memory, to reduce their footprint and increase device integration. In order to achieve a highly efficient circuit architecture, optimizations need to be made in terms of device processing. However, the time involved in the current reduction of device sizes according to Moore's Law has slowed down. Here, we propose a flexible transistor with ultra-thin IGZO (InGaZnO, indium-gallium-zinc-oxide) as the channel material, which not only scales down the footprints of multi-transistor logic gates but also combines the functions of the logic gates, memory, and sensors into a single cell. The transistor proposed here has an ultrathin semiconductor layer and can implement the typical functions of logic gates that conventionally have 2-6 transistors. Furthermore, it demonstrates the memory effect with a programming time as low as 5 ns. This design can also display various artificial synaptic behaviors. This new device design and structure can be adopted for the development of next-generation flexible electronics that require higher integration.

Keywords

memorysensorsflexible electronicssmall footprintneuromorphic circuitlogic gates

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Nano Research
Volume 14 Issue 1,
January 2021
Pages 232-238
DOI: 10.1007/s12274-020-3074-4
Cite this article:
Dai C, Chen P, Qi S, et al. Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint. Nano Research, 2021, 14(1): 232-238. https://doi.org/10.1007/s12274-020-3074-4
Topics:
Computer circuits Gallium compoundsIISemiconducting indium compounds VI semiconductors

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Received: 29 June 2020
Revised: 23 August 2020
Accepted: 24 August 2020
Published: 05 January 2021
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature
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