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Research Article | Open Access

Multiple radial phosphorus segregations in GaAsP core-shell nanowires

H. Aruni Fonseka1( ), Yunyan Zhang2, James A. Gott1, Richard Beanland1, Huiyun Liu2, Ana M. Sanchez1
Department of Physics, University of Warwick, Coventry CV4 7AL, UK
Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE, UK
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Graphical Abstract

Abstract

Highly faceted geometries such as nanowires are prone to form self-formed features, especially those that are driven by segregation. Understanding these features is important in preventing their formation, understanding their effects on nanowire properties, or engineering them for applications. Single elemental segregation lines that run along the radii of the hexagonal cross-section have been a common observation in alloy semiconductor nanowires. Here, in GaAsP nanowires, two additional P rich bands are formed on either side of the primary band, resulting in a total of three segregation bands in the vicinity of three of the alternating radii. These bands are less intense than the primary band and their formation can be attributed to the inclined nanofacets that form in the vicinity of the vertices. The formation of the secondary bands requires a higher composition of P in the shell, and to be grown under conditions that increase the diffusivity difference between As and P. Furthermore, it is observed that the primary band can split into two narrow and parallel bands. This can take place in all six radii, making the cross sections to have up to a maximum of 18 radial segregation bands. With controlled growth, these features could be exploited to assemble multiple different quantum structures in a new dimension (circumferential direction) within nanowires.

Keywords

compound semiconductor alloysradial segregationsthree-fold symmetrysurface chemical potential

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References

[1]
G. Biasiol,; A. Gustafsson,; K. Leifer,; E. Kapon, Mechanisms of self-ordering in nonplanar epitaxy of semiconductor nanostructures. Phys. Rev. B 2002, 65, 205306.
Google Scholar
[2]
M. Ozdemir,; A. Zangwill, Theory of epitaxial growth onto nonplanar substrates. J. Vac. Sci. Technol. A 1992, 10, 684-690.
Google Scholar
[3]
C. Chen,; S. Shehata,; C. Fradin,; R. LaPierre,; C. Couteau,; G. Weihs, Self-directed growth of AlGaAs core-shell nanowires for visible light applications. Nano Lett. 2007, 7, 2584-2589.
Google Scholar
[4]
A. S. Ameruddin,; H. A. Fonseka,; P. Caroff,; J. Wong-Leung,; R. L. O. het Veld,; J. L. Boland,; M. B. Johnston,; H. H. Tan,; C. Jagadish, InxGa1-xAs nanowires with uniform composition, pure wurtzite crystal phase and taper-free morphology. Nanotechnology 2015, 26, 205604.
Google Scholar
[5]
N. Sköld,; J. B. Wagner,; G. Karlsson,; T. Hernán,; W. Seifert,; M. E. Pistol,; L. Samuelson, Phase segregation in AlInP shells on GaAs nanowires. Nano Lett. 2006, 6, 2743-2747.
Google Scholar
[6]
Y. Y. Zhang,; A. M. Sanchez,; J. Wu,; M. Aagesen,; J. V. Holm,; R. Beanland,; T. Ward,; H. Y. Liu, Polarity-driven quasi-3-fold composition symmetry of self-catalyzed III-V-V ternary core-shell nanowires. Nano Lett. 2015, 15, 3128-3133.
Google Scholar
[7]
C. L. Zheng,; J. Wong-Leung,; Q. Gao,; H. H. Tan,; C. Jagadish,; J. Etheridge, Polarity-driven 3-fold symmetry of GaAs/AlGaAs core multishell nanowires. Nano Lett. 2013, 13, 3742-3748.
Google Scholar
[8]
J. B. Wagner,; N. Sköld,; L. R. Wallenberg,; L. Samuelson, Growth and segregation of GaAs-AlxIn1-xP core-shell nanowires. J. Cryst. Growth 2010, 312, 1755-1760.
Google Scholar
[9]
K. W. Ng,; W. S. Ko,; R. Chen,; F. L. Lu,; T. T. D. Tran,; K. Li,; C. J. Chang-Hasnain, Composition homogeneity in InGaAs/GaAs core-shell nanopillars monolithically grown on silicon. ACS Appl. Mater. Interfaces 2014, 6, 16706-16711.
Google Scholar
[10]
X. M. Yuan,; P. Caroff,; J. Wong-Leung,; H. H. Tan,; C. Jagadish, Controlling the morphology, composition and crystal structure in gold-seeded GaAs1-xSbx nanowires. Nanoscale 2015, 7, 4995-5003.
Google Scholar
[11]
L. Francaviglia,; G. Tütüncüoglu,; S. Martí-Sánchez,; E. Di Russo,; S. E. Steinvall,; J. S. Ruiz,; H. Potts,; M. Friedl,; L. Rigutti,; J. Arbiol, et al. Segregation scheme of indium in AlGaInAs nanowire shells. Phys. Rev. Mater. 2019, 3, 023001.
Google Scholar
[12]
D. Rudolph,; S. Funk,; M. Döblinger,; S. Morkötter,; S. Hertenberger,; L. Schweickert,; J. Becker,; S. Matich,; M. Bichler,; D. Spirkoska, et al. Spontaneous alloy composition ordering in GaAs-AlGaAs core-shell nanowires. Nano Lett. 2013, 13, 1522-1527.
Google Scholar
[13]
N. Jeon,; B. Loitsch,; S. Morkoetter,; G. Abstreiter,; J. Finley,; H. J. Krenner,; G. Koblmueller,; L. J. Lauhon, Alloy fluctuations act as quantum dot-like emitters in GaAs-AlGaAs core-shell nanowires. ACS Nano 2015, 9, 8335-8343.
Google Scholar
[14]
B. Loitsch,; N. Jeon,; M. Döblinger,; J. Winnerl,; E. Parzinger,; S. Matich,; U. Wurstbauer,; H. Riedl,; G. Abstreiter,; J. J. Finley, et al. Suppression of alloy fluctuations in GaAs-AlGaAs core-shell nanowires. Appl. Phys. Lett. 2016, 109, 093105.
Google Scholar
[15]
H. A. Fonseka,; A. V. Velichko,; Y. Y. Zhang,; J. A. Gott,; G. D. Davis,; R. Beanland,; H. Y. Liu,; D. J. Mowbray,; A. M. Sanchez, Self-formed quantum wires and dots in GaAsP-GaAsP core-shell nanowires. Nano Lett. 2019, 19, 4158-4165.
Google Scholar
[16]
J. Arbiol,; C. Magen,; P. Becker,; G. Jacopin,; A. Chernikov,; S. Schäfer,; F. Furtmayr,; M. Tchernycheva,; L. Rigutti,; J. Teubert, et al. Self-assembled GaN quantum wires on GaN/AlN nanowire templates. Nanoscale 2012, 4, 7517-7524.
Google Scholar
[17]
G. Schmidt,; M. Müller,; P. Veit,; S. Metzner,; F. Bertram,; J. Hartmann,; H. Zhou,; H. H. Wehmann,; A. Waag,; J. Christen, Direct imaging of Indium-rich triangular nanoprisms self-organized formed at the edges of InGaN/GaN core-shell nanorods. Sci. Rep. 2018, 8, 16026.
Google Scholar
[18]
M. Heiss,; Y. Fontana,; A. Gustafsson,; G. Wüst,; C. Magen,; D. D. O’Regan,; J. W. Luo,; B. Ketterer,; S. Conesa-Boj,; A. V. Kuhlmann, et al. Self-assembled quantum dots in a nanowire system for quantum photonics. Nat. Mater. 2013, 12, 439-444.
Google Scholar
[19]
Y. Yu,; X. M. Dou,; B. Wei,; G. W. Zha,; X. J. Shang,; L. Wang,; D. Su,; J. X. Xu,; H. Y. Wang,; H. Q. Ni, et al. Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics. Adv. Mater. 2014, 26, 2710-2717.
Google Scholar
[20]
J. Lähnemann,; M. O. Hill,; J. Herranz,; O. Marquardt,; G. H. Gao,; A. Al Hassan,; A. Davtyan,; S. O. Hruszkewycz,; M. V. Holt,; C. Y. Huang, et al. Correlated nanoscale analysis of the emission from wurtzite versus zincblende (In, Ga)As/GaAs nanowire core-shell quantum wells. Nano Lett. 2019, 19, 4448-4457.
Google Scholar
[21]
P. Corfdir,; R. B. Lewis,; O. Marquardt,; H. Küpers,; J. Grandal,; E. Dimakis,; A. Trampert,; L. Geelhaar,; O. Brandt,; R. T. Phillips, Exciton recombination at crystal-phase quantum rings in GaAs/ InxGa1-xAs core/multishell nanowires. Appl. Phys. Lett. 2016, 109, 082107.
Google Scholar
[22]
K. Ariga,; M. Nishikawa,; T. Mori,; J. Takeya,; L. K. Shrestha,; J. P. Hill, Self-assembly as a key player for materials nanoarchitectonics. Sci. Technol. Adv. Mater. 2019, 20, 51-95.
Google Scholar
[23]
H. Weman,; E. Martinet,; A. Rudra,; E. Kapon, Selective carrier injection into V-groove quantum wires. Appl. Phys. Lett. 1998, 73, 2959-2961.
Google Scholar
[24]
Q. Zhu,; E. Pelucchi,; S. Dalessi,; K. Leifer,; M. A. Dupertuis,; E. Kapon, Alloy segregation, quantum confinement, and carrier capture in self-ordered pyramidal quantum wires. Nano Lett. 2006, 6, 1036-1041.
Google Scholar
[25]
S. D. Wu,; L. W. Guo,; W. X. Wang,; Z. H. Li,; P. J. Niu,; Q. Huang,; J. M. Zhou, Incorporation behaviour of arsenic and phosphorus in GaAsP/GaAs grown by solid source molecular beam epitaxy with a GaP decomposition source. Chin. Phys. Lett. 2005, 22, 960-962.
Google Scholar
[26]
N. Jeon,; D. Ruhstorfer,; M. Döblinger,; S. Matich,; B. Loitsch,; G. Koblmüller,; L. Lauhon, Connecting composition-driven faceting with facet-driven composition modulation in GaAs-AlGaAs core-shell nanowires. Nano Lett. 2018, 18, 5179-5185.
Google Scholar
[27]
R. Bergamaschini,; F. Montalenti,; L. Miglio, Sunburst pattern by kinetic segregation in core-shell nanowires: A phase-field study. Appl. Surf. Sci. 2020, 517, 146056.
Google Scholar
[28]
T. Sato,; I. Tamai,; H. Hasegawa, Growth kinetics and modeling of selective molecular beam epitaxial growth of GaAs ridge quantum wires on pre-patterned nonplanar substrates. J. Vac. Sci. Technol. B 2004, 22, 2266-2274.
Google Scholar
[29]
K. Stiles,; A. Kahn, Low energy electron diffraction study of (221) and (311) GaAs surfaces. J. Vac. Sci. Technol. B 1985, 3, 1089-1092.
Google Scholar
[30]
K. Jacobi,; L. Geelhaar,; J. Márquez, Structure of high-index GaAs surfaces—The discovery of the stable GaAs (2511) surface. Appl. Phys. A 2002, 75, 113-127.
Google Scholar
[31]
D. J. Chadi, Atomic and electronic structures of (111), (211), and (311) surfaces of GaAs. J. Vac. Sci. Technol. B 1985, 3, 1167-1169.
Google Scholar
[32]
J. Márquez,; P. Kratzer,; L. Geelhaar,; K. Jacobi,; M. Scheffler, Atomic structure of the stoichiometric GaAs(114) surface. Phys. Rev. Lett. 2001, 86, 115-118.
Google Scholar
[33]
A. Palma,; E. Semprini,; A. Talamo,; N. Tomassini, Diffusion constant of Ga, In and As adatoms on GaAs (001) surface: Molecular dynamics calculations. Mater. Sci. Eng. B 1996, 37, 135-138.
Google Scholar
[34]
M. Tanaka,; T. Suzuki,; T. Nishinaga, Surface diffusion of Al and Ga atoms on GaAs (001) and (111) B vicinal surfaces in molecular beam epitaxy. J. Crystal Growth 1991, 111, 168-172.
Google Scholar
[35]
G. Biasiol,; F. Reinhardt,; A. Gustafsson,; E. Kapon, Self-limiting OMCVD growth of GaAs on V-grooved substrates with application to InGaAs/GaAs quantum wires. J. Electron. Mater. 1997, 26, 1194-1198.
Google Scholar
[36]
J. Platen,; A. Kley,; C. Setzer,; K. Jacobi,; P. Ruggerone,; M. Scheffler, The importance of high-index surfaces for the morphology of GaAs quantum dots. J. Appl. Phys. 1999, 85, 3597-3601.
Google Scholar
[37]
R. Nötzel,; L. Däweritz,; K. Ploog, Topography of high- and low-index GaAs surfaces. Phys. Rev. B 1992, 46, 4736-4743.
Google Scholar
[38]
N. V. Sibirev,; M. A. Timofeeva,; A. D. Bol’shakov,; M. V. Nazarenko,; V. G. Dubrovskiĭ, Surface energy and crystal structure of nanowhiskers of III-V semiconductor compounds. Phys. Solid State 2010, 52, 1531-1538.
Google Scholar
[39]
http://www.ioffe.rssi.ru/SVA/NSM/Semicond/ (accessed Jan 4, 2020).
[40]
Y. Matsushima,; S. I. Gonda, Molecular beam epitaxy of GaP and GaAs1-xPx. Jpn. J. Appl. Phys. 1976, 15, 2093.
Google Scholar
[41]
H. A. Fonseka,; A. S. Ameruddin,; P. Caroff,; D. Tedeschi,; M. De Luca,; F. Mura,; Y. Guo,; M. Lysevych,; F. Wang,; H. H. Tan, et al. InP-InxGa1-xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3-1.55 μm wavelength range. Nanoscale 2017, 9, 13554-13562.
Google Scholar
[42]
M. De la Mata,; X. Zhou,; F. Furtmayr,; J. Teubert,; S. Gradečak,; M. Eickhoff,; A. Fontcuberta i Morral,; J. Arbiol, A review of MBE grown 0D, 1D and 2D quantum structures in a nanowire. J. Mater. Chem. C 2013, 1, 4300-4312.
Google Scholar
[43]
F. Qian,; Y. Li,; S. Gradečak,; H. G. Park,; Y. J. Dong,; Y. Ding,; Z. L. Wang,; C. M. Lieber, Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. Nat. Mater. 2008, 7, 701-706.
Google Scholar
[44]
M. Karimi,; V. Jain,; M. Heurlin,; A. Nowzari,; L. Hussain,; D. Lindgren,; J. E. Stehr,; I. A. Buyanova,; A. Gustafsson,; L. Samuelson, et al. Room-temperature InP/InAsP quantum discs-in-nanowire infrared photodetectors. Nano Lett. 2017, 17, 3356-3362.
Google Scholar
Nano Research
Volume 14 Issue 1,
January 2021
Pages 157-164
DOI: 10.1007/s12274-020-3060-x
Cite this article:
Fonseka HA, Zhang Y, Gott JA, et al. Multiple radial phosphorus segregations in GaAsP core-shell nanowires. Nano Research, 2021, 14(1): 157-164. https://doi.org/10.1007/s12274-020-3060-x
Topics:
Nano unitIIINanowiresPhosphorusSemiconductor alloysVI semiconductors

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Received: 09 July 2020
Revised: 13 August 2020
Accepted: 14 August 2020
Published: 05 January 2021
© The Author(s) 2020

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