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Nano Research 2020, 13(12): 3439-3444 https://doi.org/10.1007/s12274-020-3038-8
Research Article | Issue | Published: 08 September 2020

Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides

Show Author's Information Qijie Liang1,2,  Jian Gou2,  Arramel2,  Qian Zhang3( ),  Wenjing Zhang1( ),  Andrew Thye Shen Wee2,4( )
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore
Keywords:
charge transfer, two-dimensional, transition metal dichalcogenides, oxygen induced doping, oxygen substitution
Topics:
Charge transferMolybdenum compoundsPalladium compoundsPlatinum compoundsScanning tunneling microscopySelenium compoundsSemiconductor dopingTellurium compoundsTransition metalsTungsten compoundsX-ray photoelectron spectroscopy
Cite this article:
Liang Q, Gou J, Arramel, et al. Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides. Nano Research, 2020, 13(12): 3439-3444. https://doi.org/10.1007/s12274-020-3038-8
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Abstract Full text Electronic supplementary material About this article

Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable towards their device function. Herein, controllable oxygen-induced p-type doping in a range of hexagonal (MoTe2, WSe2, MoSe2 and PtSe2) and pentagonal (PdSe2) 2D TMDs are demonstrated. Scanning tunneling microscopy, electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole doping. Three mechanisms are postulated that contribute to the hole doping in 2D TMDs, namely charge transfer from absorbed oxygen molecules, surface oxides, and chalcogen atom substitution. This work provides insights into the doping effects of oxygen, enabling the engineering of 2D TMDs properties for nanoelectronic applications.


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About this article

Oxygen-induced controllable p-type doping in 2D semiconductor transition metal dichalcogenides

Show Author's information Qijie Liang1,2, Jian Gou2,  Arramel2, Qian Zhang3( ), Wenjing Zhang1( ), Andrew Thye Shen Wee2,4( )
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117551, Singapore
Department of Materials Science and Engineering, National University of Singapore, Singapore 117574, Singapore
Centre for Advanced 2D Materials, National University of Singapore, Block S14, 6 Science Drive 2, Singapore 117546, Singapore

Abstract

Exposure to oxygen alters the physical and chemical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). In particular, oxygen in the ambient may influence the device stability of 2D TMDs over time. Engineering the doping of 2D TMDs, especially hole doping is highly desirable towards their device function. Herein, controllable oxygen-induced p-type doping in a range of hexagonal (MoTe2, WSe2, MoSe2 and PtSe2) and pentagonal (PdSe2) 2D TMDs are demonstrated. Scanning tunneling microscopy, electrical transport and X-ray photoelectron spectroscopy are used to probe the origin of oxygen-derived hole doping. Three mechanisms are postulated that contribute to the hole doping in 2D TMDs, namely charge transfer from absorbed oxygen molecules, surface oxides, and chalcogen atom substitution. This work provides insights into the doping effects of oxygen, enabling the engineering of 2D TMDs properties for nanoelectronic applications.

Keywords: charge transfer, two-dimensional, transition metal dichalcogenides, oxygen induced doping, oxygen substitution

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Publication history
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Acknowledgements

Publication history

Received: 15 July 2020
Revised: 04 August 2020
Accepted: 04 August 2020
Published: 08 September 2020
Issue date: December 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work was financially supported by the National Natural Science Foundation of China (No. 51472164), Shenzhen Peacock Plan (No. KQTD2016053112042971), the Educational Commission of Guangdong Province (Nos. 2015KGJHZ006 and 2016KCXTD006), and the Science and Technology Planning Project of Guangdong Province (No. 2016B050501005). A. T. S. W. acknowledges funding support from MOE Tier 2 grant R 144-000-382-112, A*STAR Pharos Program (No. 1527300025), and facility support from the NUS Centre for Advanced 2D Materials (CA2DM).

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