Enhancing stability by tuning element ratio in 2D transition metal chalcogenides

Zhenjia Zhou; Tao Xu; Chenxi Zhang; Shisheng Li; Jie Xu; Litao Sun; Libo Gao

doi:10.1007/s12274-020-3035-y

Nano Research 2021, 14(6): 1704-1710 https://doi.org/10.1007/s12274-020-3035-y

Research Article | Issue | Published: 03 September 2020

Enhancing stability by tuning element ratio in 2D transition metal chalcogenides

Show Author's Information Hide Author's Information Zhenjia Zhou^{¹^,^§}, Tao Xu^{²^,^§}, Chenxi Zhang^¹, Shisheng Li^³, Jie Xu^¹, Litao Sun^²(

), Libo Gao^¹(

)

1 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2 SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

3 International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 3050044, Japan

^§ Zhenjia Zhou and Tao Xu contributed equally to this work.

Keywords:

stability, transition metal chalcogenides, point defects, stoichiometric ratio, two-step vapor deposition

Topics:

Chalcogenides Transition metals

Cite this article:

Zhou Z, Xu T, Zhang C, et al. Enhancing stability by tuning element ratio in 2D transition metal chalcogenides. Nano Research, 2021, 14(6): 1704-1710. https://doi.org/10.1007/s12274-020-3035-y

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Abstract

Two-dimensional (2D) transition metal chalcogenides (TMCs) are known to be susceptible to the atmosphere, which greatly obscures the intrinsic physical and chemical properties. The quantitative origin of the instability on the atomic scale has not been well investigated due to the lack of environmentally stable TMCs sample. Here, we find the stability of the grown TMCs is strongly relevant to their initial element ratios, and thus the stoichiometric bonded TMCs have favorable stability, benefitted from the TMCs with controllable chalcogenisation. In this study, the degree of structural degradation has been quantitatively defined by the reduced element ratio of chalcogen to metal through the time-dependent characterizations, and the non-stoichiometric ratios in TMCs reveal the atomic lattices with point defects like additive bonds or vacancies inside. This study not only provides a potential view to fabricate environmentally stable TMCs based devices, but also will bring an effective feasibility of stacking stable vertical heterostructures.

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About this article

Enhancing stability by tuning element ratio in 2D transition metal chalcogenides

Show Author's information Hide Author's Information Zhenjia Zhou^{¹^,^§}, Tao Xu^{²^,^§}, Chenxi Zhang^¹, Shisheng Li^³, Jie Xu^¹, Litao Sun^²(

), Libo Gao^¹(

)

1 National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

2 SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

3 International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 3050044, Japan

^§ Zhenjia Zhou and Tao Xu contributed equally to this work.

Abstract

Keywords: stability, transition metal chalcogenides, point defects, stoichiometric ratio, two-step vapor deposition

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Acknowledgements

Publication history

Received: 07 June 2020

Revised: 30 July 2020

Accepted: 04 August 2020

Published: 03 September 2020

Issue date: June 2021

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Acknowledgements

We thank Yi Zhang for the MoSe₂ samples by MBE. This work was supported by the National Key R&D Program of China (No. 2018YFA0305800), the Fundamental Research Funds for the Central Universities (Nos. 020414380145 and 020414380153), the National Natural Science Foundation of China (Nos. 11674154, 11761131010, 51972163, and 11904163), the Natural Science Foundation of Jiangsu Province (No. BK20190010) and the Fok Ying-Tong Education Foundation of China (No. 171038). T. X. and L. T. S. acknowledge support from the National Natural Science Foundation of China (Nos. 61974021 and 11525415).

L. B. G. conceived and supervised the project, and designed the experiments. Z. J. Z. carried out growth experiments and XPS, Raman and PL measurements. C. X. Z. and J. X. assisted in the growth experiments. T. X. and L. T. S. performed AC-TEM. S. S. L. provided some 1-CVD grown samples. L. B. G. and Z. J. Z. wrote the manuscript, T. X. and L. T. S. revised it, and all authors commented on it.