References(93)
[1]
J. C. Meyer,; A. K. Geim,; M. I. Katsnelson,; K. S. Novoselov,; T. J. Booth,; S. Roth, The structure of suspended graphene sheets. Nature 2007, 446, 60-63.
[2]
Y. Kubota,; K. Watanabe,; O. Tsuda,; T. Taniguchi, Deep ultraviolet light-emitting hexagonal boron nitride synthesized at atmospheric pressure. Science 2007, 317, 932-934.
[3]
L. Viti,; J. Hu,; D. Coquillat,; A. Politano,; C. Consejo,; W. Knap,; M. S. Vitiello, Heterostructured hBN-BP-hBN nanodetectors at Terahertz frequencies. Adv. Mater. 2016, 28, 7390-7396.
[4]
L. K. Li,; Y. J. Yu,; G. J. Ye,; Q. Q. Ge,; X. D. Ou,; H. Wu,; D. L. Feng,; X. H. Chen,; Y. B. Zhang, Black phosphorus field-effect transistors. Nat. Nanotechnol. 2014, 9, 372-377.
[5]
L. Shulenburger,; A. D. Baczewski,; Z. Zhu,; J. Guan,; D. Tománek, The nature of the interlayer interaction in bulk and few-layer phosphorus. Nano Lett. 2015, 15, 8170-8175.
[6]
M. Chhowalla,; H. S. Shin,; G. Eda,; L. J. Li,; K. P. Loh,; H. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets. Nat. Chem. 2013, 5, 263-275.
[7]
G. R. Bhimanapati,; Z. Lin,; V. Meunier,; Y. Jung,; J. Cha,; S. Das,; D. Xiao,; Y. Son,; M. S. Strano,; V. Cooper, et al. Recent advances in two-dimensional materials beyond graphene. ACS Nano 2015, 9, 11509-11539.
[8]
W. Jiang,; X. D. Wang,; Y. Chen,; G. J. Wu,; K. Ba,; N. N. Xuan,; Y. Y. Sun,; P. Gong,; J. X. Bao,; H. Shen, et al. Larg-area high quality PtSe2 thin film with versatile polarity. InfoMat 2019, 1, 260-267.
[9]
S. Chen,; J. F. Gao,; B. M. Srinivasan,; Y. W. Zhang, A kinetic Monte Carlo study for mono- and bi-layer growth of MoS2 during chemical vapor deposition. Acta Phys. -Chim. Sinica 2019, 35, 1119-1127.
[10]
C. X. Cong,; J. Z. Shang,; L. Niu,; L. S. Wu,; Y. Chen,; C. J. Zou,; S. Feng,; Z. J. Qiu,; L. G. Hu,; P. F. Tian, et al. Anti-Stokes photoluminescence of van der Waals layered semiconductor PbI2. Adv. Opt. Mater. 2017, 5, 1700609.
[11]
Y. G. Guo,; W. A. Saidi,; W. Qian, 2D halide Perovskite-based van der Waals heterostructures: Contact evaluation and performance modulation. 2D Mater. 2017, 4, 035009.
[12]
E. Londero,; E. Schröder, Role of van der Waals bonding in the layered oxide V2O5: First-principles density-functional calculations. Phys. Rev. B 2010, 82, 054116.
[13]
Z. B. Zheng,; J. N. Chen,; Y. Wang,; X. M. Wang,; X. B. Chen,; P. Y. Liu,; J. B. Xu,; W. G. Xie,; H. J. Chen,; S. Z. Deng, et al. Highly confined and tunable hyperbolic phonon polaritons in van der Waals semiconducting transition metal oxides. Adv. Mater. 2018, 30, 1705318.
[14]
Z. K. Tang,; C. J. Tong,; W. Geng,; D. Y. Zhang,; L. M. Liu, Two-dimensional Ni(OH)2-XS2 (X = Mo and W) heterostructures. 2D Mater. 2015, 2, 034014.
[15]
S. Kim,; A. Konar,; W. S. Hwang,; J. H. Lee,; J. Lee,; J. Yang,; C. Jung,; H. Kim,; J. B. Yoo,; J. Y. Choi, et al. High-mobility and low- power thin-film transistors based on multilayer MoS2 crystals. Nat. Commun. 2012, 3, 1011.
[16]
H. L. Zeng,; X. D. Cui, An optical spectroscopic study on two- dimensional group-VI transition metal dichalcogenides. Chem. Soc. Rev. 2015, 44, 2629-2642.
[17]
S. M. Li,; M. C. Tian,; Q. G. Gao,; M. F. Wang,; T. Y. Li,; Q. L. Hu,; X. F. Li,; Y. Q. Wu, Nanometre-thin indium tin oxide for advanced high-performance electronics. Nat. Mater. 2019, 18, 1091-1097.
[18]
K. S. Burch,; D. Mandrus,; J. G. Park, Magnetism in two-dimensional van der Waals materials. Nature 2018, 563, 47-52.
[19]
C. Gong,; X. Zhang, Two-dimensional magnetic crystals and emergent heterostructure devices. Science 2019, 363, eaav4450.
[20]
M. Gibertini,; M. Koperski,; A. F. Morpurgo,; K. S. Novoselov, Magnetic 2D materials and heterostructures. Nat. Nanotechnol. 2019, 14, 408-419.
[21]
Z. Y. Lin,; Y. Liu,; U. Halim,; M. N. Ding,; Y. Y. Liu,; Y. L. Wang,; C. C. Jia,; P. Chen,; X. D. Duan,; C. Wang, et al. Solution- processable 2D semiconductors for high-performance large-area electronics. Nature 2018, 562, 254-258.
[22]
Z. Wang,; P. Wang,; F. Wang,; J. F. Ye,; T. He,; F. Wu,; M. Peng,; P. S. Wu,; Y. F. Chen,; F. Zhong, et al. A noble metal dichalcogenide for high-performance field-effect transistors and broadband photodetectors. Adv. Funct. Mater. 2020, 30, 1907945.
[23]
Q. H. Wang,; K. Kalantar-Zadeh,; A. Kis,; J. N. Coleman,; M. S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 2012, 7, 699-712.
[24]
B. W. H. Baugher,; H. O. H. Churchill,; Y. F. Yang,; P. Jarillo-Herrero, Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide. Nat. Nanotechnol. 2014, 9, 262-267.
[25]
S. W. Jiang,; L. Z. Li,; Z. F. Wang,; J. Shan,; K. F. Mak, Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures. Nat. Electronics 2019, 2, 159-163.
[26]
X. Y. Lin,; W. Yang,; K. L. Wang,; W. S. Zhao, Two-dimensional spintronics for low-power electronics. Nat. Electronics 2019, 2, 274-283.
[27]
W. Zhang,; P. K. J. Wong,; R. Zhu,; A. T. S. Wee, Van der Waals magnets: Wonder building blocks for two-dimensional spintronics? InfoMat 2019, 1, 479-495.
[28]
H. González-Herrero,; J. M. Gómez-Rodríguez,; P. Mallet,; M. Moaied,; J. J. Palacios,; C. Salgado,; M. M. Ugeda,; J. Y. Veuillen,; F. Yndurain,; I. Brihuega, Atomic-scale control of graphene magnetism by using hydrogen atoms. Science 2016, 352, 437-441.
[29]
J. Červenka,; M. I. Katsnelson,; C. F. J. Flipse, Room-temperature ferromagnetism in graphite driven by two-dimensional networks of point defects. Nat. Phys. 2009, 5, 840-844.
[30]
A. Avsar,; A. Ciarrocchi,; M. Pizzochero,; D. Unuchek,; O. V. Yazyev,; A. Kis, Defect induced, layer-modulated magnetism in ultrathin metallic PtSe2. Nat. Nanotechnol. 2019, 14, 674-678.
[31]
S. V. Eremeev,; M. M. Otrokov,; E. V. Chulkov, New universal type of interface in the magnetic insulator/topological insulator heterostructures. Nano Lett. 2018, 18, 6521-6529.
[32]
T. Hu,; G. D. Zhao,; H. Gao,; Y. B. Wu,; J. S. Hong,; A. Stroppa,; W. Ren, Manipulation of valley pseudospin in WSe2/CrI3 heterostructures by the magnetic proximity effect. Phys. Rev. B 2020, 101, 125401.
[33]
N. D. Mermin,; H. Wagner, Absence of ferromagnetism or antiferromagnetism in one-or two-dimensional isotropic Heisenberg models. Phys. Rev. Lett. 1966, 17, 1133-1136.
[34]
C. Gong,; L. Li,; Z. L. Li,; H. W. Ji,; A. Stern,; Y. Xia,; T. Cao,; W. Bao,; C. Z. Wang,; Y. Wang, et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 2017, 546, 265-269.
[35]
Z. Y. Fei,; B. Huang,; P. Malinowski,; W. B. Wang,; T. C. Song,; J. Sanchez,; W. Yao,; D. Xiao,; X. Y. Zhu,; A. F. May, et al. Two- dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat. Mater. 2018, 17, 778-782.
[36]
D. J. O’Hara,; T. C. Zhu,; A. H. Trout,; A. S. Ahmed,; Y. K. Luo,; C. H. Lee,; M. R. Brenner,; S. Rajan,; J. A. Gupta,; D. W. McComb, et al. Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit. Nano Lett. 2018, 18, 3125-3131.
[37]
L. X. Kang,; C. Ye,; X. X. Zhao,; X. Y. Zhou,; J. X. Hu,; Q. Li,; D. Liu,; C. Das,; J. F. Yang,; D. Y. Hu, et al. Phase-controllable growth of ultrathin 2D magnetic FeTe crystals. Nat. Commun. 2020, 11, 3729.
[38]
B. Huang,; G. Clark,; E. Navarro-Moratalla,; D. R. Klein,; R. Cheng,; K. L. Seyler,; D. Zhong,; E. Schmidgall,; M. A. McGuire,; D. H. Cobden, et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 2017, 546, 270-273.
[39]
C. F. Van Bruggen,; C. Haas, Magnetic susceptibility and electrical properties of VSe2 single crystals. Solid State Commun. 1976, 20, 251-254.
[40]
M. Bonilla,; S. Kolekar,; Y. J. Ma,; H. C. Diaz,; V. Kalappattil,; R. Das,; T. Eggers,; H. R. Gutierrez,; M. H. Phan,; M. Batzill, Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat. Nanotechnol. 2018, 13, 289-293.
[41]
Y. J. Deng,; Y. J. Yu,; Y. C. Song,; J. Z. Zhang,; N. Z. Wang,; Z. Y. Sun,; Y. F. Yi,; Y. Z. Wu,; S. W. Wu,; J. Y. Zhu, et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 2018, 563, 94-99.
[42]
B., Clark, G. Huang,; D. R. Klein,; D. MacNeill,; E. Navarro-Moratalla,; K. L. Seyler,; N. Wilson,; M. A. McGuire,; D. H. Cobden,; D. Xiao, et al. Electrical control of 2D magnetism in bilayer CrI3. Nat. Nanotechnol. 2018, 13, 544-548.
[43]
W. Chen,; Z. Y. Sun,; Z. J. Wang,; L. H. Gu,; X. D. Xu,; S. W. Wu,; C. L. Gao, Direct observation of van der Waals stacking-dependent interlayer magnetism. Science 2019, 366, 983-987.
[44]
W. Yu,; J. Li,; T. S. Herng,; Z. S. Wang,; X. X. Zhao,; X. Chi,; W. Fu,; I. Abdelwahab,; J. Zhou,; J. D. Dan, et al. Chemically exfoliated VSe2 monolayers with room-temperature ferromagnetism. Adv. Mater. 2019, 31, 1903779.
[45]
T. C. Song,; X. H. Cai,; M. W. Y. Tu,; X. O. Zhang,; B. Huang,; N. P. Wilson,; K. L. Seyler,; L. Zhu,; T. Taniguchi,; K. Watanabe, et al. Giant tunneling magnetoresistance in spin-filter van der Waals heterostructures. Science 2018, 360, 1214-1218.
[46]
K. S. Kim,; Y. Zhao,; H. Jang,; S. Y. Lee,; J. M. Kim,; K. D. Kim,; J. H. Ahn,; P. Kim,; J. Y. Choi,; B. H. Hong, Large-scale pattern growth of graphene films for stretchable transparent electrodes. Nature 2009, 457, 706-710.
[47]
X. S. Li,; W. W. Cai,; J. An,; S. Kim,; J. Nah,; D. X. Yang,; R. Piner,; A. Velamakanni,; I. Jung,; E. Tutuc, et al. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science 2009, 324, 1312-1314.
[48]
L. Song,; L. J. Ci,; H. Lu,; P. B. Sorokin,; C. H. Jin,; J. Ni,; A. G. Kvashnin,; D. G. Kvashnin,; J. Lou,; B. I. Yakobson, et al. Large scale growth and characterization of atomic hexagonal boron nitride layers. Nano Lett. 2010, 10, 3209-3215.
[49]
K. K. Kim,; A. Hsu,; X. T. Jia,; S. M. Kim,; Y. M. Shi,; M. Hofmann,; D. Nezich,; J. F. Rodriguez-Nieva,; M. Dresselhaus,; T. Palacios, et al. Synthesis of monolayer hexagonal boron nitride on Cu foil using chemical vapor deposition. Nano Lett. 2012, 12, 161-166.
[50]
Y. J. Gong,; J. H. Lin,; X. L. Wang,; G. Shi,; S. D. Lei,; Z. Lin,; X. L. Zou,; G. L. Ye,; R. Vajtai,; B. I. Yakobson, et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135-1142.
[51]
X. D. Duan,; C. Wang,; J. C. Shaw,; R. Cheng,; Y. Chen,; H. L. Li,; X. P. Wu,; Y. Tang,; Q. L. Zhang,; A. L. Pan, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol. 2014, 9, 1024-1030.
[52]
F. Li,; Y. X. Feng,; Z. W. Li,; C. Ma,; J. Y. Qu,; X. P. Wu,; D. Li,; X. H. Zhang,; T. F. Yang,; Y. Q. He, et al. Rational kinetics control toward universal growth of 2D vertically stacked heterostructures. Adv. Mater. 2019, 31, 1901351.
[53]
Q. S. Wang,; K. Xu,; Z. X. Wang,; F. Wang,; Y. Huang,; M. Safdar,; X. Y. Zhan,; F. M. Wang,; Z. Z. Cheng,; J. He, van der Waals epitaxial ultrathin two-dimensional nonlayered semiconductor for highly efficient flexible optoelectronic devices. Nano Lett. 2015, 15, 1183-1189.
[54]
D. D. Zhu,; J. Xia,; L. Wang,; X. Z. Li,; L. F. Tian,; X. M. Meng, van der Waals epitaxy and photoresponse of two-dimensional CdSe plates. Nanoscale 2016, 8, 11375-11379.
[55]
H. F. Ma,; Z. Wan,; J. Li,; R. X. Wu,; Z. W. Zhang,; B. Li,; B. Zhao,; Q. Qian,; Y. Liu,; Q. L. Xia, et al. Phase-tunable synthesis of ultrathin layered tetragonal CoSe and nonlayered hexagonal CoSe nanoplates. Adv. Mater. 2019, 31, 1900901.
[56]
S. S. Zhou,; R. Y. Wang,; J. B. Han,; D. L. Wang,; H. Q. Li,; L. Gan,; T. Y. Zhai, Ultrathin non-van der Waals magnetic Rhombohedral Cr2S3: Space-confined chemical vapor deposition synthesis and Raman scattering investigation. Adv. Funct. Mater. 2019, 29, 1805880.
[57]
J. Li,; B. Zhao,; P. Chen,; R. X. Wu,; B. Li,; Q. L. Xia,; G. H. Guo,; J. Luo,; K. T. Zang,; Z. W. Zhang, et al. Synthesis of ultrathin metallic MTe2 (M = V, Nb, Ta) single-crystalline nanoplates. Adv. Mater. 2018, 30, 1801043.
[58]
W. J. Hardy,; J. T. Yuan,; H. Guo,; P. P. Zhou,; J. Lou,; D. Natelson, Thickness-dependent and magnetic-field-driven suppression of antiferromagnetic order in thin V5S8 single crystals. ACS Nano 2016, 10, 5941-5946.
[59]
Y. Z. Xue,; Y. Zhang,; H. C. Wang,; S. H. Lin,; Y. Y. Li,; J. Y. Dai,; S. P. Lau, Thickness-dependent magnetotransport properties in 1T VSe2 single crystals prepared by chemical vapor deposition. Nanotechnology 2020, 31, 145712.
[60]
J. T. Yuan,; A. Balk,; H. Guo,; Q. Y. Fang,; S. Patel,; X. H. Zhao,; T. Terlier,; D. Natelson,; S. Crooker,; J. Lou, Room-temperature magnetic order in air-stable ultrathin iron oxide. Nano Lett. 2019, 19, 3777-3781.
[61]
J. D. Zhou,; J. H. Lin,; X. W. Huang,; Y. Zhou,; Y. Chen,; J. Xia,; H. Wang,; Y. Xie,; H. M. Yu,; J. C. Lei, et al. A library of atomically thin metal chalcogenides. Nature 2018, 556, 355-359.
[62]
H. T. Liu,; Y. Z. Xue,; J. A. Shi,; R. A. Guzman,; P. P. Zhang,; Z. Zhou,; Y. G. He,; C. Bian,; L. M. Wu,; R. S. Ma, et al. Observation of the kondo effect in multilayer single-crystalline VTe2 nanoplates. Nano Lett. 2019, 19, 8572-8580.
[63]
P. F. Yang,; X. L. Zou,; Z. P. Zhang,; M. Hong,; J. P. Shi,; S. L. Chen,; J. P. Shu,; L. Y. Zhao,; S. L. Jiang,; X. B. Zhou, et al. Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass. Nat. Commun. 2018, 9, 979.
[64]
F. F. Cui,; X. X. Zhao,; J. J. Xu,; B. Tang,; Q. Y. Shang,; J. P. Shi,; Y. H. Huan,; J. H. Liao,; Q. Chen,; Y. L. Hou, et al. Controlled growth and thickness-dependent conduction-type transition of 2D ferrimagnetic Cr2S3 semiconductors. Adv. Mater. 2020, 32, 1905896.
[65]
J. W. Chu,; Y. Zhang,; Y. Wen,; R. X. Qiao,; C. C. Wu,; P. He,; L. Yin,; R. Q. Cheng,; F. Wang,; Z. X. Wang, et al. Sub-millimeter-scale growth of one-unit-cell-thick ferrimagnetic Cr2S3 nanosheets. Nano Lett. 2019, 19, 2154-2161.
[66]
Y. Zhang,; J. W. Chu,; L. Yin,; T. A. Shifa,; Z. Z. Cheng,; R. Q. Cheng,; F. Wang,; Y. Wen,; X. Y. Zhan,; Z. X. Wang, et al. Ultrathin magnetic 2D single-crystal CrSe. Adv. Mater. 2019, 31, 1900056.
[67]
X. G. Wang,; Z. Zhou,; P. Zhang,; S. Q. Zhang,; Y. Ma,; W. W. Yang,; H. Wang,; B. X. Li,; L. J. Meng,; H. N. Jiang, et al. Thickness- controlled synthesis of CoX2 (X = S, Se, and Te) single crystalline 2D layers with linear magnetoresistance and high conductivity. Chem. Mater. 2020, 32, 2321-2329.
[68]
H. T. Liu,; L. H. Bao,; Z. Zhou,; B. Y. Che,; R. Z. Zhang,; C. Bian,; R. S. Ma,; L. M. Wu,; H. F. Yang,; J. J. Li, et al. Quasi-2D transport and weak antilocalization effect in few-layered VSe2. Nano Lett. 2019, 19, 4551-4559.
[69]
C. Y. Yan,; L. Gan,; X. Zhou,; J. Guo,; W. J. Huang,; J. W. Huang,; B. Jin,; J. Xiong,; T. Y. Zhai,; Y. R. Li, Space-confined chemical vapor deposition synthesis of ultrathin HfS2 flakes for optoelectronic application. Adv. Funct. Mater. 2017, 27, 1702918.
[70]
D. J. Lee,; Y. Lee,; Y. H. Kwon,; S. H. Choi,; W. Yang,; D. Y. Kim,; S. Lee, Room-temperature ferromagnetic ultrathin α-MoO3: Te nanoflakes. ACS Nano 2019, 13, 8717-8724.
[71]
H. J. Xu,; J. W. Wei,; H. A. Zhou,; J. F. Feng,; T. Xu,; H. F. Du,; C. L. He,; Y. Huang,; J. W. Zhang,; Y. Z. Liu, et al. High spin hall conductivity in large-area type-II dirac semimetal PtTe2. Adv. Mater. 2020, 32, 2000513.
[72]
S. J. Yun,; D. L. Duong,; D. M. Ha,; K. Singh,; T. L. Phan,; W. Choi,; Y. M. Kim,; Y. H. Lee, Ferromagnetic order at room temperature in monolayer WSe2 semiconductor via vanadium dopant. Adv. Sci. 2020, 7, 1903076.
[73]
L. B. Wang,; C. Xu,; Z. B. Liu,; L. Chen,; X. L. Ma,; H. M. Cheng,; W. C. Ren,; N. Kang, Magnetotransport properties in high-quality ultrathin two-dimensional superconducting Mo2C crystals. ACS Nano 2016, 10, 4504-4510.
[74]
J. S. Qi,; X. Li,; X. F. Chen,; K. G. Hu, Strain tuning of magnetism in Mn doped MoS2 monolayer. J. Phys.: Condens. Matter 2014, 26, 256003.
[75]
X. L. Fan,; Y. R. An,; W. J. Guo, Ferromagnetism in transitional metal-doped MoS2 monolayer. Nanoscale Res. Lett. 2016, 11, 154.
[76]
R. Mishra,; W. Zhou,; S. J. Pennycook,; S. T. Pantelides,; J. C. Idrobo, Long-range ferromagnetic ordering in manganese-doped two- dimensional dichalcogenides. Phys. Rev. B 2013, 88, 144409.
[77]
Q. Li,; X. X. Zhao,; L. J. Deng,; Z. T. Shi,; S. Liu,; Q. L. Wei,; L. B. Zhang,; Y. C. Cheng,; L. Zhang,; H. P. Lu, et al. Enhanced valley zeeman splitting in Fe-doped monolayer MoS2. ACS Nano 2020, 14, 4636-4645.
[78]
J. D. Zhou,; J. H. Lin,; H. Sims,; C. Y. Jiang,; C. X. Cong,; J. A. Brehm,; Z. W. Zhang,; L. Niu,; Y. Chen,; Y. Zhou, et l. Synthesis of Co-doped MoS2 monolayers with enhanced valley splitting. Adv. Mater. 2020, 32, 1906536.
[79]
K. H. Zhang,; S. M. Feng,; J. J. Wang,; A. Azcatl,; N. Lu,; R. Addou,; N. Wang,; C. J. Zhou,; J. Lerach,; V. Bojan, et al. Manganese doping of monolayer MoS2: The substrate is critical. Nano Lett. 2015, 15, 6586-6591.
[80]
V. Kochat,; A. Apte,; J. A. Hachtel,; H. Kumazoe,; A. Krishnamoorthy,; S. Susarla,; J. C. Idrobo,; F. Shimojo,; P. Vashishta,; R. Kalia, et al. Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv. Mater. 2017, 29, 1703754.
[81]
H. L. Duan,; P. Guo,; C. Wang,; H. Tan,; W. Hu,; W. S. Yan,; C. Ma,; L. Cai,; L. Song,; W. H. Zhang, et al. Beating the exclusion rule against the coexistence of robust luminescence and ferromagnetism in chalcogenide monolayers. Nat. Commun. 2019, 10, 1584.
[82]
S. Cho,; S. Kim,; J. H. Kim,; J. Zhao,; J. Seok,; D. H. Keum,; J. Baik,; D. H. Choe,; K. J. Chang,; K. Suenaga, et al. Phase patterning for ohmic homojunction contact in MoTe2. Science 2015, 349, 625-628.
[83]
X. L. Xu,; B. Han,; S. Liu,; S. Q. Yang,; X. H. Jia,; W. J. Xu,; P. Gao,; Y. Ye,; L. Dai, Atomic-precision repair of a few-layer 2H-MoTe2 thin film by phase transition and recrystallization induced by a heterophase interface. Adv. Mater. 2020, 32, 2000236.
[84]
S. H. Zhao,; T. Hotta,; T. Koretsune,; K. Watanabe,; T. Taniguchi,; K. Sugawara,; T. Takahashi,; H. Shinohara,; R. Kitaura, Two- dimensional metallic NbS2: Growth, optical identification and transport properties. 2D Mater. 2016, 3, 025027.
[85]
I. Guillamón,; H. Suderow,; S. Vieira,; L. Cario,; P. Diener,; P. Rodière, Superconducting density of states and vortex cores of 2H-NbS2. Phys. Rev. Lett. 2008, 101, 166407.
[86]
X. L. Sun,; B. N. Shi,; H. Y. Wang,; N. Lin,; S. D. Liu,; K. J. Yang,; B. T. Zhang,; J. L. He, Optical properties of 2D 3R phase niobium disulfide and its applications as a saturable absorber. Adv. Opt. Mater. 2020, 8, 1901181.
[87]
L. Craco,; S. Leoni, Comparative study of tetragonal and hexagonal FeSe: An orbital-selective scenario. EPL 2010, 92, 67003.
[88]
Y. Mizuguchi,; F. Tomioka,; S. Tsuda,; T. Yamaguchi,; Y. Takano, Superconductivity at 27 K in tetragonal FeSe under high pressure. Appl. Phys. Lett. 2008, 93, 152505.
[89]
F. J. Ma,; W. Ji,; J. P. Hu,; Z. Y. Lu,; T. Xiang, First-principles calculations of the electronic structure of tetragonal α-FeTe and α-FeSe crystals: Evidence for a bicollinear antiferromagnetic order. Phys. Rev. Lett. 2009, 102, 177003.
[90]
D. S. Parker, Strong 3D and 1D magnetism in hexagonal Fe- chalcogenides FeS and FeSe vs. weak magnetism in hexagonal FeTe. Sci. Rep. 2017, 7, 3388.
[91]
C. S. Park,; Y. Shon,; J. Lee,; E. K. Kim, Ferromagnetic properties of MoS2 film doped by Fe using chemical vapour deposition. Solid State Commun. 2020, 306, 113776.
[92]
J. J. Niu,; B. M. Yan,; Q. Q. Ji,; Z. F. Liu,; M. Q. Li,; P. Gao,; Y. F. Zhang,; D. P. Yu,; X. S. Wu, Anomalous Hall effect and magnetic orderings in nanothick V5S8. Phys. Rev. B 2017, 96, 075402.
[93]
B. Huang,; G. Clark,; D. R. Klein,; D. MacNeill,; E. Navarro-Moratalla,; K. L. Seyler,; N. Wilson,; M. A. McGuire,; D. H. Cobden,; D. Xiao, et al. Electrical control of 2D magnetism in bilayer CrI3. Nat. Nanotechnol. 2018, 13, 544-548.