References(76)
[1]
S. Bertolazzi,; J. Brivio,; A. Kis, Stretching and breaking of ultrathin MoS2. ACS Nano 2011, 5, 9703-9709.
[2]
B. Radisavljevic,; A. Radenovic,; J. Brivio,; V. Giacometti,; A. Kis, Single-layer MoS2 transistors. Nat. Nanotechnol. 2011, 6, 147-150.
[3]
K. Kang,; S. E. Xie,; L. J. Huang,; Y. M. Han,; P. Y. Huang,; K. F. Mak,; C. J. Kim,; D. Muller,; J. Park, High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity. Nature 2015, 520, 656-660.
[4]
Y. R. Lim,; W. Song,; J. K. Han,; Y. B. Lee,; S. J. Kim,; S. Myung,; S. S. Lee,; K. S. An,; C. J. Choi,; J. Lim, Wafer-scale, homogeneous MoS2 layers on plastic substrates for flexible visible-light photodetectors. Adv. Mater. 2016, 28, 5025-5030.
[5]
K. F. Mak,; C. Lee,; J. Hone,; J. Shan,; T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
[6]
J. Zhao,; W. Chen,; J. L. Meng,; H. Yu,; M. Z. Liao,; J. Q. Zhu,; R. Yang,; D. X. Shi,; G. Y. Zhang, Integrated flexible and high-quality thin film transistors based on monolayer MoS2. Adv. Electron. Mater. 2016, 2, 1500379.
[7]
J. X. Liu,; X. H. Chen,; Q. Q. Wang,; M. M. Xiao,; D. L. Zhong,; W. Sun,; G. Y. Zhang,; Z. Y. Zhang, Ultrasensitive monolayer MoS2 field-effect transistor based DNA sensors for screening of down syndrome. Nano Lett. 2019, 19, 1437-1444.
[8]
J. Zhao,; N. Li,; H. Yu,; Z. Wei,; M. Z. Liao,; P. Chen,; S. P. Wang,; D. X. Shi,; Q. J. Sun,; G. Y. Zhang, Highly sensitive MoS2 humidity sensors array for noncontact sensation. Adv. Mater. 2017, 29, 1702076.
[9]
J. Zhao,; Z. Wei,; Q. Zhang,; H. Yu,; S. P. Wang,; X. X. Yang,; G. Y. Gao,; S. S. Qin,; G. Y. Zhang,; Q. J. Sun, et al. Static and dynamic piezopotential modulation in piezo-electret gated MoS2 field-effect transistor. ACS Nano 2019, 13, 582-590.
[10]
J. P. Shi,; D. L. Ma,; G. F. Han,; Y. Zhang,; Q. Q. Ji,; T. Gao,; J. Y. Sun,; X. J. Song,; C. Li,; Y. S. Zhang, et al. Controllable growth and transfer of monolayer MoS2 on Au foils and its potential application in hydrogen evolution reaction. ACS Nano 2014, 8, 10196-10204.
[11]
J. Q. Zhu,; Z. C. Wang,; H. J. Dai,; Q. Q. Wang,; R. Yang,; H. Yu,; M. Z. Liao,; J. Zhang,; W. Chen,; Z. Wei, et al. Boundary activated hydrogen evolution reaction on monolayer MoS2. Nat. Commun. 2019, 10, 1348.
[12]
H. Li,; C. Tsai,; A. L. Koh,; L. L. Cai,; A. W. Contryman,; A. H. Fragapane,; J. H. Zhao,; H. S. Han,; H. C. Manoharan,; F. Abild-Pedersen, et al. Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies. Nat. Mater. 2016, 15, 48-53.
[13]
J. N. Coleman,; M. Lotya,; A. O'Neill,; S. D. Bergin,; P. J. King,; U. Khan,; K. Young,; A. Gaucher,; S. De,; R. J. Smith, et al. Two- dimensional nanosheets produced by liquid exfoliation of layered materials. Science 2011, 331, 568-571.
[14]
A. O’Neill,; U. Khan,; J. N. Coleman, Preparation of high concentration dispersions of exfoliated MoS2 with increased flake size. Chem. Mater. 2012, 24, 2414-2421.
[15]
H. Yu,; M. Z. Liao,; W. J. Zhao,; G. D. Liu,; X. J. Zhou,; Z. Wei,; X. Z. Xu,; K. H. Liu,; Z. H. Hu,; K. Deng, et al. Wafer-scale growth and transfer of highly-oriented monolayer MoS2 continuous films. ACS Nano 2017, 11, 12001-12007.
[16]
N. Choudhary,; J. Park,; J. Y. Hwang,; W. Choi, Growth of large-scale and thickness-modulated MoS2 nanosheets. ACS Appl. Mater. Interfaces 2014, 6, 21215-21222.
[17]
P. F. Yang,; X. L. Zou,; Z. P. Zhang,; M. Hong,; J. P. Shi,; S. L. Chen,; J. P. Shu,; L. Y. Zhao,; S. L. Jiang,; X. B. Zhou, et al. Batch production of 6-inch uniform monolayer molybdenum disulfide catalyzed by sodium in glass. Nat. Commun. 2018, 9, 979.
[18]
Y. H. Lee,; X. Q. Zhang,; W. J. Zhang,; M. T. Chang,; C. T. Lin,; K. D. Chang,; Y. C. Yu,; J. T. W. Wang,; C. S. Chang,; L. J. Li, et al. Synthesis of large-area MoS2 atomic layers with chemical vapor deposition. Adv. Mater. 2012, 24, 2320-2325.
[19]
J. Zhang,; H. Yu,; W. Chen,; X. Z. Tian,; D. H. Liu,; M. Cheng,; G. B. Xie,; W. Yang,; R. Yang,; X. D. Bai, et al. Scalable growth of high-quality polycrystalline MoS2 monolayers on SiO2 with tunable grain sizes. ACS Nano 2014, 8, 6024-6030.
[20]
Y. J. Zhan,; Z. Liu,; S. Najmaei,; P. M. Ajayan,; J. Lou, Large-area vapor-phase growth and characterization of MoS2 atomic layers on a SiO2 substrate. Small 2012, 8, 966-971.
[21]
X. S. Wang,; H. B. Feng,; Y. M. Wu,; L. Y. Jiao, Controlled synthesis of highly crystalline MoS2 flakes by chemical vapor deposition. J. Am. Chem. Soc. 2013, 135, 5304-5307.
[22]
J. G. Tao,; J. W. Chai,; X. Lu,; L. M. Wong,; T. I. Wong,; J. S. Pan,; Q. H. Xiong,; D. Z. Chi,; S. J. Wang, Growth of wafer-scale MoS2 monolayer by magnetron sputtering. Nanoscale 2015, 7, 2497-2503.
[23]
L. K. Tan,; B. Liu,; J. H. Teng,; S. F. Guo,; H. Y. Low,; K. P. Loh, Atomic layer deposition of a MoS2 film. Nanoscale 2014, 6, 10584-10588.
[24]
K. K. Liu,; W. J. Zhang,; Y. H. Lee,; Y. C. Lin,; M. T. Chang,; C. Y. Su,; C. S. Chang,; H. Li,; Y. M. Shi,; H. Zhang, et al. Growth of large-area and highly crystalline MoS2 thin layers on insulating substrates. Nano Lett. 2012, 12, 1538-1544.
[25]
S. F. Wu,; C. M. Huang,; G. Aivazian,; J. S. Ross,; D. H. Cobden,; X. D. Xu, Vapor-solid growth of high optical quality MoS2 monolayers with near-unity valley polarization. ACS Nano 2013, 7, 2768-2772.
[26]
Y. F. Yu,; C. Li,; Y. Liu,; L. Q. Su,; Y. Zhang,; L. Y. Cao, Controlled scalable synthesis of uniform, high-quality monolayer and few-layer MoS2 films. Sci. Rep. 2013, 3, 1866.
[27]
S. H. Baek,; Y. Choi,; W. Choi, Large-area growth of uniform single-layer MoS2 thin films by chemical vapor deposition. Nanoscale Res. Lett. 2015, 10, 388.
[28]
L. N. Liu,; H. L. Qiu,; J. Y. Wang,; G. C. Xu,; L. Y. Jiao, Atomic MoS2 monolayers synthesized from a metal-organic complex by chemical vapor deposition. Nanoscale 2016, 8, 4486-4490.
[29]
X. Ling,; Y. H. Lee,; Y. X. Lin,; W. J. Fang,; L. L. Yu,; M. S. Dresselhaus,; J. Kong, Role of the seeding promoter in MoS2 growth by chemical vapor deposition. Nano Lett. 2014, 14, 464-472.
[30]
L. N. Liu,; J. X. Wu,; L. Y. Wu,; M. Ye,; X. Z. Liu,; Q. Wang,; S. Y. Hou,; P. F. Lu,; L. .F Sun,; J. Y. Zheng, et al. Phase-selective synthesis of 1T' MoS2 monolayers and heterophase bilayers. Nat. Mater. 2018, 17, 1108-1114.
[31]
G. H. Han,; N. J. Kybert,; C. H. Naylor,; B. S. Lee,; J. L. Ping,; J. H. Park,; J. Kang,; S. Y. Lee,; Y. H. Lee,; R. Agarwal, et al. Seeded growth of highly crystalline molybdenum disulphide monolayers at controlled locations. Nat. Commun. 2015, 6, 6128.
[32]
Y. J. Gong,; Z. Lin,; G. L. Ye,; G. Shi,; S. M. Feng,; Y. Lei,; A. L. Elias,; N. Perea-Lopez,; R. Vajtai,; H. Terrones, et al. Tellurium-assisted low-temperature synthesis of MoS2 and WS2 monolayers. ACS Nano 2015, 9, 11658-11666.
[33]
S. S. Li,; Y. C. Lin,; W. Zhao,; J. Wu,; Z. Wang,; Z. H. Hu,; Y. D. Shen,; D. M. Tang,; J. Y. Wang,; Q. Zhang, et al. Vapour-liquid-solid growth of monolayer MoS2 nanoribbons. Nat. Mater. 2018, 17, 535-542.
[34]
H. Kim,; D. Ovchinnikov,; D. Deiana,; D. Unuchek,; A. Kis, Suppressing nucleation in metal-organic chemical vapor deposition of MoS2 monolayers by alkali metal halides. Nano Lett. 2017, 17, 5056-5063.
[35]
Y. P. Shi,; P. F. Yang,; S. L. Jiang,; Z. P. Zhang,; Y. H. Huan,; C. Y. Xie,; M. Hong,; J. P. Shi,; Y. F. Zhang, Na-assisted fast growth of large single-crystal MoS2 on sapphire. Nanotechnology 2019, 30, 034002.
[36]
K. H. Zhang,; B. M. Bersch,; F. Zhang,; N. C. Briggs,; S. Subramanian,; K. Xu,; M. Chubarov,; K. Wang,; J. O. Lerach,; J. M. Redwing, et al. Considerations for utilizing sodium chloride in epitaxial molybdenum disulfide. ACS Appl. Mater. Interfaces 2018, 10, 40831-40837.
[37]
P. Wang,; J. Y. Lei,; J. F. Qu,; S. Y. Cao,; H. Jiang,; M. C. He,; H. Y. Shi,; X. D. Sun,; B. Gao,; W. J. Liu, Mechanism of alkali metal compound-promoted growth of monolayer MoS2: Eutectic intermediates. Chem. Mater. 2019, 31, 873-880.
[38]
L. A. Walsh,; C. L. Hinkle, van der Waals epitaxy: 2D materials and topological insulators. Appl. Mater. Today 2017, 9, 504-515.
[39]
W. Chen,; J. Zhao,; J. Zhang,; L. Gu,; Z. Z. Yang,; X. M. Li,; H. Yu,; X. T. Zhu,; R. Yang,; D. X. Shi, et al. Oxygen-assisted chemical vapor deposition growth of Large single-crystal and high-quality monolayer MoS2. J. Am. Chem. Soc. 2015, 137, 15632-15635.
[40]
H. Yu,; Z. Z. Yang,; L. J. Du,; J. Zhang,; J. N. Shi,; W. Chen,; P. Chen,; M. Z. Liao,; J. Zhao,; J. L. Meng, et al. Precisely aligned monolayer MoS2 epitaxially grown on h-BN basal plane. Small 2017, 13, 1603005.
[41]
L. Fu,; Y. Y. Sun,; N. Wu,; R. G. Mendes,; L. F. Chen,; Z. Xu,; T. Zhang,; M. H. Rummeli,; B. Rellinghaus,; D. Pohl, et al. Direct growth of MoS2/h-BN heterostructures via a sulfide-resistant alloy. ACS Nano 2016, 10, 2063-2070.
[42]
C. Ahn,; J. Lee,; H. U. Kim,; H. Bark,; M. Jeon,; G. H. Ryu,; Z. Lee,; G. Y. Yeom,; K. Kim,; J. Jung, et al. Low-temperature synthesis of large-scale molybdenum disulfide thin films directly on a plastic substrate using plasma-enhanced chemical vapor deposition. Adv. Mater. 2015, 27, 5223-5229.
[43]
Z. F. Zhang,; X. L. Xu,; J. Song,; Q. G. Gao,; S. C. Li,; Q. L. Hu,; X. F. Li,; Y. Q. Wu, High-performance transistors based on monolayer CVD MoS2 grown on molten glass. Appl. Phys. Lett. 2018, 113, 202103.
[44]
D. Dumcenco,; D. Ovchinnikov,; K. Marinov,; P. Lazić,; M. Gibertini,; N. Marzari,; O. L. Sanchez,; Y. C. Kung,; D. Krasnozhon,; M. W. Chen, et al. Large-area epitaxial monolayer MoS2. ACS Nano 2015, 9, 4611-4620.
[45]
A. Aljarb,; Z. Cao,; H. L. Tang,; J. K. Huang,; M. L. Li,; W. J. Hu,; L. Cavallo,; L. J. Li, Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides. ACS Nano 2017, 11, 9215-9222.
[46]
K. Suenaga,; H. G. Ji,; Y. C. Lin,; T. Vincent,; M. Maruyama,; A. S. Aji,; Y. Shiratsuchi,; D. Ding,; K. Kawahara,; S. Okada, et al. Surface-mediated aligned growth of monolayer MoS2 and in-plane heterostructures with graphene on sapphire. ACS Nano 2018, 12, 10032-10044.
[47]
Y. Zhang,; Q. Q. Ji,; G. F. Han,; J. Ju,; J. P. Shi,; D. L. Ma,; J. Y. Sun,; Y. S. Zhang,; M. J. Li,; X. Y. Lang, et al. Dendritic, transferable, strictly monolayer MoS2 flakes synthesized on SrTiO3 single crystals for efficient electrocatalytic applications. ACS Nano 2014, 8, 8617-8624.
[48]
Q. Q. Ji,; Y. F. Zhang,; T. Gao,; Y. Zhang,; D. L. Ma,; M. X. Liu,; Y. B. Chen,; X. F. Qiao,; P. H. Tan,; M. Kan, et al. Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett. 2013, 13, 3870-3877.
[49]
Y. M. Shi,; W. Zhou,; A. Y. Lu,; W. J. Fang,; Y. H. Lee,; A. L. Hsu,; S. M. Kim,; K. K. Kim,; H. Y. Yang,; L. J. Li, et al. van der Waals epitaxy of MoS2 layers using graphene as growth templates. Nano Lett. 2012, 12, 2784-2791.
[50]
S. S. Wang,; X. C. Wang,; J. H. Warner, All chemical vapor deposition growth of MoS2: h-BN vertical van der Waals heterostructures. ACS Nano 2015, 9, 5246-5254.
[51]
W. F. Zhao,; H. Yu,; M. Z. Liao,; L. Zhang,; S. Z. Zou,; H. J. Yu,; C. J. He,; J. Y. Zhang,; G. Y. Zhang,; X. C. Lin, Large area growth of monolayer MoS2 film on quartz and its use as a saturable absorber in laser mode-locking. Semicond. Sci. Technol. 2017, 32, 025013.
[52]
M. Z. Liao,; Z. Wei,; L. J. Du,; Q. Q. Wang,; J. Tang,; H. Yu,; F. F. Wu,; J. J. Zhao,; X. Z. Xu,; B. Han, et al. Precise control of the interlayer twist angle in large scale MoS2 homostructures. Nat. Commun. 2020, 11, 2153.
[53]
P. F. Yang,; S. Q. Zhang,; S. Y. Pan,; B. Tang,; Y. Liang,; X. X. Zhao,; Z. P. Zhang,; J. P. Shi,; Y. H. Huan,; Y. P. Shi, et al. Epitaxial growth of centimeter-scale single-crystal MoS2 monolayer on Au(111). ACS Nano 2020, 14, 5036-5045.
[54]
J. Zhang,; J. H. Wang,; P. Chen,; Y. Sun,; S. Wu,; Z. Y. Jia,; X. B. Lu,; H. Yu,; W. Chen,; J. Q. Zhu, et al. Observation of strong interlayer coupling in MoS2/WS2 heterostructures. Adv. Mater. 2016, 28, 1950-1956.
[55]
K. M. McCreary,; A. T. Hanbicki,; J. T. Robinson,; E. Cobas,; J. C. Culbertson,; A. L. Friedman,; G. G. Jernigan,; B. T. Jonker, Large-area synthesis of continuous and uniform MoS2 monolayer films on graphene. Adv. Funct. Mater. 2014, 24, 6449-6454.
[56]
W. Zhou,; X. L. Zou,; S. Najmaei,; Z. Liu,; Y. M. Shi,; J. Kong,; J. Lou,; P. M. Ajayan,; B. I. Yakobson,; J. C. Idrobo, Intrinsic structural defects in monolayer molybdenum disulfide. Nano Lett. 2013, 13, 2615-2622.
[57]
J. H. Hong,; Z. X. Hu,; M. Probert,; K. Li,; D. H. Lv,; X. A. Yang,; L. Gu,; N. N. Mao,; Q. L. Feng,; L. N. Xie, et al. Exploring atomic defects in molybdenum disulphide monolayers. Nat. Commun. 2015, 6, 6293.
[58]
A. M. van der Zande,; P. Y. Huang,; D. A. Chenet,; T. C. Berkelbach,; Y. M. You,; G. H. Lee,; T. F. Heinz,; D. R. Reichman,; D. A. Muller,; J. C. Hone, Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554-561.
[59]
S. Najmaei,; Z. Liu,; W. Zhou,; X. L. Zou,; G. Shi,; S. D. Lei,; B. I. Yakobson,; J. C. Idrobo,; P. M. Ajayan,; J. Lou, Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers. Nat. Mater. 2013, 12, 754-759.
[60]
D. F. Wang,; H. Yu,; L. Tao,; W. D. Xiao,; P. Fan,; T. T. Zhang,; M. Z. Liao,; W. Guo,; D. X. Shi,; S. X. Du, et al. Bandgap broadening at grain boundaries in single-layer MoS2. Nano Res. 2018, 11, 6102-6109.
[61]
S. Najmaei,; M. Amani,; M. L. Chin,; Z. Liu,; A. G. Birdwell,; T. P. O'Regan,; P. M. Ajayan,; M. Dubey,; J. Lou, Electrical transport properties of polycrystalline monolayer molybdenum disulfide. ACS Nano 2014, 8, 7930-7937.
[62]
Z. Y. Lin,; Y. D. Zhao,; C. J. Zhou,; R. Zhong,; X. S. Wang,; Y. H. Tsang,; Y. Chai, Controllable growth of large-size crystalline MoS2 and resist-free transfer assisted with a cu thin film. Sci. Rep. 2016, 5, 18596.
[63]
J. Q. Zhu,; Z. C. Wang,; H. Yu,; N. Li,; J. Zhang,; J. L. Meng,; M. Z. Liao,; J. Zhao,; X. B. Lu,; L. J. Du, et al. Argon plasma induced phase transition in monolayer MoS2. J. Am. Chem. Soc. 2017, 139, 10216-10219.
[64]
R. Kappera,; D. Voiry,; S. E. Yalcin,; B. Branch,; G. Gupta,; A. D. Mohite,; M. Chhowalla, Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nat. Mater. 2014, 13, 1128-1134.
[65]
Y. C. Lin,; D. O. Dumcenco,; Y. S. Huang,; K. Suenaga, Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2. Nat. Nanotechnol. 2014, 9, 391-396.
[66]
X. D. Guo,; R. N. Liu,; D. B. Hu,; H. Hu,; Z. Wei,; R. Wang,; Y. Y. Dai,; Y. Cheng,; K. Chen,; K. H. Liu, et al. Efficient all-optical plasmonic modulators with atomically thin van der Waals heterostructures. Adv. Mater. 2020, 32, 1907105.
[67]
J. Zhang,; L. J. Du,; S. Feng,; R. W. Zhang,; B. C. Cao,; C. J. Zou,; Y. Chen,; M. Z. Liao,; B. L. Zhang,; S. A. Yang, et al. Enhancing and controlling valley magnetic response in MoS2/WS2 heterostructures by all-optical route. Nat. Commun. 2019, 10, 4226.
[68]
H. L. Chen,; X. W. Wen,; J. Zhang,; T. M. Wu,; Y. J. Gong,; X. Zhang,; J. T. Yuan,; C. Y. Yi,; J. Lou,; P. M. Ajayan, et al. Ultrafast formation of interlayer hot excitons in atomically thin MoS2/WS2 heterostructures. Nat. Commun. 2016, 7, 12512.
[69]
Y. Z. Xue,; Y. P. Zhang,; Y. Liu,; H. T. Liu,; J. C. Song,; J. Sophia,; J. Y. Liu,; Z. Q. Xu,; Q. Y. Xu,; Z. Y. Wang, et al. Scalable production of a few-layer MoS2/WS2 vertical heterojunction array and its application for photodetectors. ACS Nano 2016, 10, 573-580.
[70]
R. Ionescu,; I. Ruiz,; Z. Favors,; B. Campbell,; M. R. Neupane,; D. Wickramaratne,; K. Ahmed,; C. Liu,; N. Abrahamian,; R. K. Lake, et al. Two step growth phenomena of molybdenum disulfide- tungsten disulfide heterostructures. Chem. Commun. 2015, 51, 11213-11216.
[71]
N. Choudhary,; J. Park,; J. Y. Hwang,; H. S. Chung,; K. H. Dumas,; S. I. Khondaker,; W. Choi,; Y. Jung, Centimeter scale patterned growth of vertically stacked few layer only 2D MoS2/WS2 van der Waals heterostructure. Sci. Rep. 2016, 6, 25456.
[72]
M. Y. Li,; Y. M. Shi,; C. C. Cheng,; L. S. Lu,; Y. C. Lin,; H. L. Tang,; M. L. Tsai,; C. W. Chu,; K. H. Wei,; J. H. He, et al. Epitaxial growth of a monolayer WSe2-MoS2 lateral p-n junction with an atomically sharp interface. Science 2015, 349, 524-528.
[73]
Y. J. Gong,; J. H. Lin,; X. L. Wang,; G. Shi,; S. D. Lei,; Z. Lin,; X. L. Zou,; G. L. Ye,; R. Vajtai,; B. I. Yakobson, et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nat. Mater. 2014, 13, 1135-1142.
[74]
H. Heo,; J. H. Sung,; G. Jin,; J. H. Ahn,; K. Kim,; M. J. Lee,; S. Cha,; H. Choi,; M. H. Jo, Rotation-misfit-free heteroepitaxial stacking and stitching growth of hexagonal transition-metal dichalcogenide monolayers by nucleation kinetics controls. Adv. Mater. 2015, 27, 3803-3810.
[75]
Y. Yoo,; Z. P. Degregorio,; J. E. Johns, Seed crystal homogeneity controls lateral and vertical heteroepitaxy of monolayer MoS2 and WS2. J. Am. Chem. Soc. 2015, 137, 14281-14287.
[76]
F. Li,; Y. X. Feng,; Z. W. Li,; C. Ma,; J. Y. Qu,; X. P. Wu,; D. Li,; X. H. Zhang,; T. F. Yang,; Y. Q. He, et al. Rational kinetics control toward universal growth of 2D vertically stacked heterostructures. Adv. Mater. 2019, 31, 1901351.