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Review Article

Monolayer MoS2 epitaxy

Zheng Wei1,2Qinqin Wang1,2Lu Li1,2Rong Yang1,2,3Guangyu Zhang1,2,3( )
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
Songshan Lake Materials Laboratory, Dongguan 523808, China
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Abstract

As an emerging two-dimensional (2D) semiconductor material, monolayer MoS2 has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS2 with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS2 monolayers. Here, we review the epitaxial growth of monolayer MoS2 on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.

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Nano Research
Pages 1598-1608

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Cite this article:
Wei Z, Wang Q, Li L, et al. Monolayer MoS2 epitaxy. Nano Research, 2021, 14(6): 1598-1608. https://doi.org/10.1007/s12274-020-3019-y
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Received: 15 May 2020
Revised: 28 July 2020
Accepted: 29 July 2020
Published: 22 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature