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Nano Research 2021, 14(6): 1663-1667 https://doi.org/10.1007/s12274-020-2942-2
Research Article | Issue | Published: 13 July 2020

Growth of large scale PtTe, PtTe2 and PtSe2 films on a wide range of substrates

Show Author's Information Kenan Zhang1,§,  Meng Wang1,§,  Xue Zhou1,  Yuan Wang1,  Shengchun Shen1,  Ke Deng1,  Huining Peng1,  Jiaheng Li1,  Xubo Lai1,  Liuwan Zhang1,  Yang Wu2,  Wenhui Duan1,3,  Pu Yu1,3,  Shuyun Zhou1,3( )
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
Department of Mechanical Engineering and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

§ Kenan Zhang and Meng Wang contributed equally to this work.

Keywords:
PtSe2, transition metal dichalcogenides (TMDCs), selenization, tellurization, PtTe2, PtTe
Topics:
Platinum compoundsSelenium compoundsSemiconducting selenium compounds Thin filmsTransition metals
Cite this article:
Zhang K, Wang M, Zhou X, et al. Growth of large scale PtTe, PtTe2 and PtSe2 films on a wide range of substrates. Nano Research, 2021, 14(6): 1663-1667. https://doi.org/10.1007/s12274-020-2942-2
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Abstract Full text Electronic supplementary material About this article

1T phase of transition metal dichalcogenides (TMDCs) formed by group 10 transition metals (e.g. Pt, Pd) have attracted increasing interests due to their novel properties and potential device applications. Synthesis of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to exfoliate. Here we report the growth of centimeter-scale PtTe, 1T-PtTe2 and 1T-PtSe2 films via direct deposition of Pt metals followed by tellurization or selenization. We find that by controlling the Te flux, a hitherto-unexplored PtTe phase can also be obtained, which can be further tuned into PtTe2 by high temperature annealing under Te flux. These films with different thickness can be grown on a wide range of substrates, including NaCl which can be further dissolved to obtain free-standing PtTe2 or PtSe2 films. Moreover, a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe2 with hole carriers, PtTe2 and PtTe films are metallic. Our work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film.


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Electronic supplementary material
About this article

Growth of large scale PtTe, PtTe2 and PtSe2 films on a wide range of substrates

Show Author's information Kenan Zhang1,§, Meng Wang1,§, Xue Zhou1, Yuan Wang1, Shengchun Shen1, Ke Deng1, Huining Peng1, Jiaheng Li1, Xubo Lai1, Liuwan Zhang1, Yang Wu2, Wenhui Duan1,3, Pu Yu1,3, Shuyun Zhou1,3( )
State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
Department of Mechanical Engineering and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

§ Kenan Zhang and Meng Wang contributed equally to this work.

Abstract

1T phase of transition metal dichalcogenides (TMDCs) formed by group 10 transition metals (e.g. Pt, Pd) have attracted increasing interests due to their novel properties and potential device applications. Synthesis of large scale thin films with controlled phase is critical especially considering that these materials have relatively strong interlayer interaction and are difficult to exfoliate. Here we report the growth of centimeter-scale PtTe, 1T-PtTe2 and 1T-PtSe2 films via direct deposition of Pt metals followed by tellurization or selenization. We find that by controlling the Te flux, a hitherto-unexplored PtTe phase can also be obtained, which can be further tuned into PtTe2 by high temperature annealing under Te flux. These films with different thickness can be grown on a wide range of substrates, including NaCl which can be further dissolved to obtain free-standing PtTe2 or PtSe2 films. Moreover, a systematic thickness dependent resistivity and Hall conductivity measurements show that distinguished from the semiconducting PtSe2 with hole carriers, PtTe2 and PtTe films are metallic. Our work opens new opportunities for investigating the physical properties and potential applications of group 10 TMDC films and the new monochalcogenide PtTe film.

Keywords: PtSe2, transition metal dichalcogenides (TMDCs), selenization, tellurization, PtTe2, PtTe

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Publication history
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Acknowledgements

Publication history

Received: 23 March 2020
Revised: 07 June 2020
Accepted: 19 June 2020
Published: 13 July 2020
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

This work is supported by the National Natural Science Foundation of China (Nos. 11725418 and 21975140), the National Key Basic Research Program of China (Nos. 2015CB921001, 2016YFA0301001 and 2016YFA0301004), Science Challenge Project (No. TZ20164500122), the Basic Science Center Program of NSFC (No. 51788104), Beijing Advanced Innovation Center of Future Chip (ICFC) and Tsinghua University Initiative Scientific Research Program.

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