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Nano Research 2021, 14(6): 1682-1697 https://doi.org/10.1007/s12274-020-2919-1
Review Article | Issue | Published: 10 July 2020

Surface charge transfer doping for two-dimensional semiconductor- based electronic and optoelectronic devices

Show Author's Information Yanan Wang1,§,  Yue Zheng1,2,§,  Cheng Han2( ),  Wei Chen1,3,4,5( )
Department of Physics, National University of Singapore, Singapore 117542, Singapore
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

§ Yanan Wang and Yue Zheng contributed equally to this work.

Keywords:
surface charge transfer doping, two-dimensional (2D) semiconductors, property modulation, electronic devices, optoelectronic devices
Topics:
Charge transferOptoelectronic devicesSemiconductor devices Semiconductor doping
Cite this article:
Wang Y, Zheng Y, Han C, et al. Surface charge transfer doping for two-dimensional semiconductor- based electronic and optoelectronic devices. Nano Research, 2021, 14(6): 1682-1697. https://doi.org/10.1007/s12274-020-2919-1
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Abstract Full text About this article

Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.


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About this article

Surface charge transfer doping for two-dimensional semiconductor- based electronic and optoelectronic devices

Show Author's information Yanan Wang1,§, Yue Zheng1,2,§, Cheng Han2( ), Wei Chen1,3,4,5( )
Department of Physics, National University of Singapore, Singapore 117542, Singapore
SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Binhai New City, Fuzhou 350207, China
National University of Singapore (Suzhou) Research Institute, Suzhou 215123, China

§ Yanan Wang and Yue Zheng contributed equally to this work.

Abstract

Doping of semiconductors, i.e., accurately modulating the charge carrier type and concentration in a controllable manner, is a key technology foundation for modern electronics and optoelectronics. However, the conventional doping technologies widely utilized in silicon industry, such as ion implantation and thermal diffusion, always fail when applied to two-dimensional (2D) materials with atomically-thin nature. Surface charge transfer doping (SCTD) is emerging as an effective and non-destructive doping technique to provide reliable doping capability for 2D materials, in particular 2D semiconductors. Herein, we summarize the recent advances and developments on the SCTD of 2D semiconductors and its application in electronic and optoelectronic devices. The underlying mechanism of STCD processes on 2D semiconductors is briefly introduced. Its impact on tuning the fundamental properties of various 2D systems is highlighted. We particularly emphasize on the SCTD-enabled high-performance 2D functional devices. Finally, the challenges and opportunities for the future development of SCTD are discussed.

Keywords: surface charge transfer doping, two-dimensional (2D) semiconductors, property modulation, electronic devices, optoelectronic devices

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Publication history
Copyright
Acknowledgements

Publication history

Received: 29 April 2020
Revised: 22 May 2020
Accepted: 05 June 2020
Published: 10 July 2020
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

The authors acknowledge the financial support from Natural Science Foundation of Jiangsu Province (No. BK20170005), the National Natural Science Foundation of China (No. 21872100), Singapore MOE Grants MOE2019-T2-1-002 and R143-000- A43-114, Fundamental Research Foundation of Shenzhen (Nos. JCYJ20190808152607389 and JCYJ20170817100405375), and Shenzhen Peacock Plan (No. KQTD2016053112042971).

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