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Nano Research 2020, 13(10): 2625-2631 https://doi.org/10.1007/s12274-020-2893-7
Research Article | Issue | Published: 15 July 2020

Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate

Show Author's Information Mingrui Chen§,  Anyi Zhang§,  Yihang Liu,  Dingzhou Cui,  Zhen Li,  Yu-Han Chung,  Sai Praneetha Mutyala,  Matthew Mecklenburg,  Xiao Nie,  Chi Xu,  Fanqi Wu,  Qingzhou Liu,  Chongwu Zhou( )
Mork Family Department of Chemical Engineering and Materials Science, Ming Hsieh Department of Electrical Engineering, Core Center of Excellence in Nano Imaging and Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA

§Mingrui Chen and Anyi Zhang contributed equally to this work.

Keywords:
two-dimensional materials, chemical vapor deposition, transition metal dichalcogenides, aligned growth, tungsten diselenide (WSe2)
Topics:
Chemical vapor depositionField effect transistorsMonolayersSelenium compoundsSiliconTransition metalsTungsten compounds
Cite this article:
Chen M, Zhang A, Liu Y, et al. Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate. Nano Research, 2020, 13(10): 2625-2631. https://doi.org/10.1007/s12274-020-2893-7
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Abstract Full text Electronic supplementary material About this article

Orientation-controlled growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) may enable many new electronic and optical applications. However, previous studies reporting aligned growth of WSe2 usually yielded very small domain sizes. Herein, we introduced gold vapor into the chemical vapor deposition (CVD) process as a catalyst to assist the growth of WSe2 and successfully achieved highly aligned monolayer WSe2 triangular flakes grown on c-plane sapphire with large domain sizes (130 μm) and fast growth rate (4.3 μm·s-1). When the aligned WSe2 domains merged together, a continuous monolayer WSe2 was formed with good uniformity. After transferring to Si/SiO2 substrates, field effect transistors were fabricated on the continuous monolayer WSe2, and an average mobility of 12 cm2·V-1·s-1 was achieved, demonstrating the good quality of the material. This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes.


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About this article

Gold-vapor-assisted chemical vapor deposition of aligned monolayer WSe2 with large domain size and fast growth rate

Show Author's information Mingrui Chen§, Anyi Zhang§, Yihang Liu, Dingzhou Cui, Zhen Li, Yu-Han Chung, Sai Praneetha Mutyala, Matthew Mecklenburg, Xiao Nie, Chi Xu, Fanqi Wu, Qingzhou Liu, Chongwu Zhou( )
Mork Family Department of Chemical Engineering and Materials Science, Ming Hsieh Department of Electrical Engineering, Core Center of Excellence in Nano Imaging and Department of Physics and Astronomy, University of Southern California, Los Angeles, CA 90089, USA

§Mingrui Chen and Anyi Zhang contributed equally to this work.

Abstract

Orientation-controlled growth of two-dimensional (2D) transition metal dichalcogenides (TMDCs) may enable many new electronic and optical applications. However, previous studies reporting aligned growth of WSe2 usually yielded very small domain sizes. Herein, we introduced gold vapor into the chemical vapor deposition (CVD) process as a catalyst to assist the growth of WSe2 and successfully achieved highly aligned monolayer WSe2 triangular flakes grown on c-plane sapphire with large domain sizes (130 μm) and fast growth rate (4.3 μm·s-1). When the aligned WSe2 domains merged together, a continuous monolayer WSe2 was formed with good uniformity. After transferring to Si/SiO2 substrates, field effect transistors were fabricated on the continuous monolayer WSe2, and an average mobility of 12 cm2·V-1·s-1 was achieved, demonstrating the good quality of the material. This report paves the way to study the effect of catalytic metal vapor in the CVD process of TMDCs and contributes a novel approach to realize the growth of aligned TMDC flakes.

Keywords: two-dimensional materials, chemical vapor deposition, transition metal dichalcogenides, aligned growth, tungsten diselenide (WSe2)

References(45)

[1]
Novoselov, K. S.; Mishchenko, A.; Carvalho, A.; Castro Neto, A. H. 2D materials and van der Waals heterostructures. Science 2016, 353, aac9439.
DOI Google Scholar
[2]
Xia, F. N.; Wang, H.; Xiao, D.; Dubey, M.; Ramasubramaniam, A. Two-dimensional material nanophotonics. Nat. Photon. 2014, 8, 899-907.
DOI Google Scholar
[3]
Fang, H.; Chuang, S.; Chang, T. C.; Takei, K.; Takahashi, T.; Javey, A. High-performance single layered WSe2 p-FETs with chemically doped contacts. Nano Lett. 2012, 12, 3788-3792.
DOI Google Scholar
[4]
Liu, W.; Kang, J. H.; Sarkar, D.; Khatami, Y.; Jena, D.; Banerjee, K. Role of metal contacts in designing high-performance monolayer n-type WSe2 field effect transistors. Nano Lett. 2013, 13, 1983-1990.
DOI Google Scholar
[5]
Ma, Y. Q.; Liu, B. L.; Zhang, A. Y.; Chen, L.; Fathi, M.; Shen, C. F.; Abbas, A. N.; Ge, M. Y.; Mecklenburg, M.; Zhou, C. W. Reversible semiconducting-to-metallic phase transition in chemical vapor deposition grown monolayer WSe2 and applications for devices. ACS Nano 2015, 9, 7383-7391.
DOI Google Scholar
[6]
Liu, B. L.; Ma, Y. Q.; Zhang, A. Y.; Chen, L.; Abbas, A. N.; Liu, Y. H.; Shen, C. F.; Wan, H. C.; Zhou, C. W. High-performance WSe2 field-effect transistors via controlled formation of in-plane heterojunctions. ACS Nano 2016, 10, 5153-5160.
DOI Google Scholar
[7]
Sarkar, D.; Xie, X. J.; Kang, J. H.; Zhang, H. J.; Liu, W.; Navarrete, J.; Moskovits, M.; Banerjee, K. Functionalization of transition metal dichalcogenides with metallic nanoparticles: Implications for doping and gas-sensing. Nano Lett. 2015, 15, 2852-2862.
DOI Google Scholar
[8]
Nam, H.; Oh, B. R.; Chen, M. K.; Wi, S. J.; Li, D.; Kurabayashi, K.; Liang, X. G. Fabrication and comparison of MoS2 and WSe2 field- effect transistor biosensors. J. Vac. Sci. Technol. B 2015, 33, 06FG01.
DOI Google Scholar
[9]
Wu, F. Q.; Chen, L.; Zhang, A. Y.; Hong, Y. L.; Shih, N. Y.; Cho, S. Y.; Drake, G. A.; Fleetham, T.; Cong, S.; Cao, X. et al. High-performance sub-micrometer channel WSe2 field-effect transistors prepared using a flood-dike printing method. ACS Nano 2017, 11, 12536-12546.
DOI Google Scholar
[10]
Kelly, A. G.; Hallam, T.; Backes, C.; Harvey, A.; Esmaeily, A. S.; Godwin, I.; Coelho, J.; Nicolosi, V.; Lauth, J.; Kulkarni, A. et al. All-printed thin-film transistors from networks of liquid-exfoliated nanosheets. Science 2017, 356, 69-73.
DOI Google Scholar
[11]
Das, S.; Gulotty, R.; Sumant, A. V.; Roelofs, A. All two-dimensional, flexible, transparent, and thinnest thin film transistor. Nano Lett. 2014, 14, 2861-2866.
Google Scholar
[12]
Zheng, Z. Q.; Zhang, T. M.; Yao, J. D.; Zhang, Y.; Xu, J. R.; Yang, G. W. Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices. Nanotechnology 2016, 27, 225501.
Google Scholar
[13]
Huang, J. K.; Pu, J.; Hsu, C. L.; Chiu, M. H.; Juang, Z. Y.; Chang, Y. H.; Chang, W. H.; Iwasa, Y.; Takenobu, T.; Li, L. J. Large-area synthesis of highly crystalline WSe2 monolayers and device applications. ACS Nano 2014, 8, 923-930.
Google Scholar
[14]
Chen, J. Y.; Liu, B.; Liu, Y. P.; Tang, W.; Nai, C. T.; Li, L. J.; Zheng, J.; Gao, L. B.; Zheng, Y.; Shin, H. S. et al. Chemical vapor deposition of large-sized hexagonal WSe2 crystals on dielectric substrates. Adv. Mater. 2015, 27, 6722-6727.
Google Scholar
[15]
Li, S. S.; Wang, S. F.; Tang, D. M.; Zhao, W. J.; Xu, H. L.; Chu, L. Q.; Bando, Y.; Golberg, D.; Eda, G. Halide-assisted atmospheric pressure growth of large WSe2 and WS2 monolayer crystals. Appl. Mater. Today 2015, 1, 60-66.
Google Scholar
[16]
Huang, J.; Yang, L.; Liu, D.; Chen, J.; Fu, Q.; Xiong, Y.; Lin, F.; Xiang, B. Large-area synthesis of monolayer WSe2 on a SiO2/Si substrate and its device applications. Nanoscale 2015, 7, 4193-4198.
Google Scholar
[17]
Zhang, X. T.; Choudhury, T. H.; Chubarov, M.; Xiang, Y.; Jariwala, B.; Zhang, F.; Alem, N.; Wang, G. C.; Robinson, J. A.; Redwing, J. M. Diffusion-controlled epitaxy of large area coalesced WSe2 monolayers on sapphire. Nano Lett. 2018, 18, 1049-1056.
Google Scholar
[18]
Yu, H.; Yang, Z. Z.; Du, L. J.; Zhang, J.; Shi, J.; Chen, W.; Chen, P.; Liao, M. Z.; Zhao, J.; Meng, J. L. et al. Precisely aligned monolayer MoS2 epitaxially grown on h-BN basal plane. Small 2017, 13, 1603005.
Google Scholar
[19]
Chen, Z. X.; Liu, H. Q.; Chen, X. C.; Chu, G.; Chu, S.; Zhang, H. Wafer-size and single-crystal MoSe2 atomically thin films grown on GaN substrate for light emission and harvesting. ACS Appl. Mater. Interfaces 2016, 8, 20267-20273.
Google Scholar
[20]
Ruzmetov, D.; Zhang, K. H.; Stan, G.; Kalanyan, B.; Bhimanapati, G. R.; Eichfeld, S. M.; Burke, R. A.; Shah, P. B.; O'Regan, T. P.; Crowne, F. J. et al. Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride. ACS Nano 2016, 10, 3580-3588.
Google Scholar
[21]
Ji, Q. Q.; Zhang, Y. F.; Gao, T.; Zhang, Y.; Ma, D. L.; Liu, M. X.; Chen, Y. B.; Qiao, X. F.; Tan, P. H.; Kan, M. et al. Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett. 2013, 13, 3870-3877.
Google Scholar
[22]
Ago, H.; Fukamachi, S.; Endo, H.; Solis-Fernandez, P.; Yunus, R. M.; Uchida, Y.; Panchal, V.; Kazakova, O.; Tsuji, M. Visualization of grain structure and boundaries of polycrystalline graphene and two-dimensional materials by epitaxial growth of transition metal dichalcogenides. ACS Nano 2016, 10, 3233-3240.
Google Scholar
[23]
Eichfeld, S. M.; Hossain, L.; Lin, Y. C.; Piasecki, A. F.; Kupp, B.; Birdwell, A. G.; Burke, R. A.; Lu, N.; Peng, X.; Li, J. et al. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. ACS Nano 2015, 9, 2080-2087.
Google Scholar
[24]
Ago, H.; Endo, H.; Solís-Fernández, P.; Takizawa, R.; Ohta, Y.; Fujita, Y.; Yamamoto, K.; Tsuji, M. Controlled van der Waals epitaxy of monolayer MoS2 triangular domains on graphene. ACS Appl. Mater. Interfaces 2015, 7, 5265-5273.
Google Scholar
[25]
Lu, C. I.; Butler, C. J.; Huang, J. K.; Hsing, C. R.; Yang, H. H.; Chu, Y. H.; Luo, C. H.; Sun, Y. C.; Hsu, S. H.; Yang, K. H. O. et al. Graphite edge controlled registration of monolayer MoS2 crystal orientation. Appl. Phys. Lett. 2015, 106, 181904.
Google Scholar
[26]
Dumcenco, D.; Ovchinnikov, D.; Marinov, K.; Lazić, P.; Gibertini, M.; Marzari, N.; Sanchez, O. L.; Kung, Y. C.; Krasnozhon, D.; Chen, M. W. Large-area epitaxial monolayer MoS2. ACS Nano 2015, 9, 4611-4620.
Google Scholar
[27]
Chen, L.; Liu, B. L.; Ge, M. Y.; Ma, Y. Q.; Abbas, A. N.; Zhou, C. W. Step-edge-guided nucleation and growth of aligned WSe2 on sapphire via a layer-over-layer growth mode. ACS Nano 2015, 9, 8368-8375.
Google Scholar
[28]
Aljarb, A.; Cao, Z.; Tang, H. L.; Huang, J. K.; Li, M. L.; Hu, W. J.; Cavallo, L.; Li, L. J. Substrate lattice-guided seed formation controls the orientation of 2D transition-metal dichalcogenides. ACS Nano 2017, 11, 9215-9222.
Google Scholar
[29]
Ly, T. H.; Chiu, M. H.; Li, M. Y.; Zhao, J.; Perello, D. J.; Cichocka, M. O.; Oh, H. M.; Chae, S. H.; Jeong, H. Y.; Yao, F. et al. Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides. ACS Nano 2014, 8, 11401-11408.
Google Scholar
[30]
Tsivion, D.; Schvartzman, M.; Popovitz-Biro, R.; von Huth, P.; Joselevich, E. Guided growth of millimeter-long horizontal nanowires with controlled orientations. Science 2011, 333, 1003-1007.
Google Scholar
[31]
Kurnosikov, O.; Pham Van, L.; Cousty, J. About anisotropy of atomic-scale height step on (0001) sapphire surface. Surf. Sci. 2000, 459, 256-264.
Google Scholar
[32]
Heffelfinger, J. R.; Bench, M. W.; Carter, C. B. Steps and the structure of the (0001) α-alumina surface. Surf. Sci. 1997, 370, L168-L172.
Google Scholar
[33]
Del Corro, E.; Terrones, H.; Elias, A.; Fantini, C.; Feng, S. M.; Nguyen, M. A.; Mallouk, T. E.; Terrones, M.; Pimenta, M. A. Excited excitonic states in 1L, 2L, 3L, and bulk WSe2 observed by resonant Raman spectroscopy. ACS Nano 2014, 8, 9629-9635.
Google Scholar
[34]
Tonndorf, P.; Schmidt, R.; Böttger, P.; Zhang, X.; Börner, J.; Liebig, A.; Albrecht, M.; Kloc, C.; Gordan, O.; Zahn, D. R. T. et al. Photoluminescence emission and Raman response of monolayer MoS2, MoSe2, and WSe2. Opt. Express 2013, 21, 4908-4916.
Google Scholar
[35]
Xu, K.; Wang, Z. X.; Du, X. L.; Safdar, M.; Jiang, C.; He, J. Atomic-layer triangular WSe2 sheets: Synthesis and layer-dependent photoluminescence property. Nanotechnology 2013, 24, 465705.
Google Scholar
[36]
Li, Y.; Hao, S. Q.; DiStefano, J. G.; Murthy, A. A.; Hanson, E. D.; Xu, Y. B.; Wolverton, C.; Chen, X. Q.; Dravid, V. P. Site-specific positioning and patterning of MoS2 monolayers: The role of Au seeding. ACS Nano 2018, 12, 8970-8976.
Google Scholar
[37]
Song, I.; Park, C.; Hong, M. S.; Baik, J.; Shin, H. J.; Choi, H. C. Patternable large-scale molybdenium disulfide atomic layers grown by gold-assisted chemical vapor deposition. Angew. Chem., Int. Ed. 2014, 53, 1266-1269.
Google Scholar
[38]
Yun, S. J.; Chae, S. H.; Kim, H.; Park, J. C.; Park, J. H.; Han, G. H.; Lee, J. S.; Kim, S. M.; Oh, H. M.; Seok, J. et al. Synthesis of centimeter- scale monolayer tungsten disulfide film on gold foils. ACS Nano 2015, 9, 5510-5519.
Google Scholar
[39]
Kim, H.; Song, I.; Park, C.; Son, M.; Hong, M.; Kim, Y.; Kim, J. S.; Shin, H. J.; Baik, J.; Choi, H. C. Copper-vapor-assisted chemical vapor deposition for high-quality and metal-free single-layer graphene on amorphous SiO2 substrate. ACS Nano 2013, 7, 6575-6582.
Google Scholar
[40]
Yang, C.; Wu, T. R.; Wang, H. M.; Zhang, X. F.; Shi, Z. Y.; Xie, X. M. Copper-vapor-catalyzed chemical vapor deposition of graphene on dielectric substrates. Appl. Phys. Lett. 2017, 111, 043107.
Google Scholar
[41]
Teng, P. Y.; Lu, C. C.; Akiyama-Hasegawa, K.; Lin, Y. C.; Yeh, C. H.; Suenaga, K.; Chiu, P. W. Remote catalyzation for direct formation of graphene layers on oxides. Nano Lett. 2012, 12, 1379-1384.
Google Scholar
[42]
Gao, Y.; Liu, Z. B.; Sun, D. M.; Huang, L.; Ma, L. P.; Yin, L. C.; Ma, T.; Zhang, Z. Y.; Ma, X. L.; Peng, L. M. et al. Large-area synthesis of high-quality and uniform monolayer WS2 on reusable Au foils. Nat. Commun. 2015, 6, 8569.
Google Scholar
[43]
Gao, Y.; Hong, Y. L.; Yin, L. C.; Wu, Z. T.; Yang, Z. Q.; Chen, M. L.; Liu, Z. B.; Ma, T.; Sun, D. M.; Ni, Z. H. et al. Ultrafast growth of high-quality monolayer WSe2 on Au. Adv. Mater. 2017, 29, 1700990.
Google Scholar
[44]
Liu, J. X.; Zeng, M. Q.; Wang, L. X.; Chen, Y. T.; Xing, Z.; Zhang, T.; Liu, Z.; Zuo, J. L.; Nan, F.; Mendes, R. G. et al. Ultrafast self-limited growth of strictly monolayer WSe2 crystals. Small 2016, 12, 5741-5749.
Google Scholar
[45]
Gurarslan, A.; Yu, Y. F.; Su, L. Q.; Yu, Y. L.; Suarez, F.; Yao, S. S.; Zhu, Y.; Ozturk, M.; Zhang, Y.; Cao, L. Y. Surface-energy-assisted perfect transfer of centimeter-scale monolayer and few-layer MoS2 films onto arbitrary substrates. ACS Nano 2014, 8, 11522-11528.
Google Scholar
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Publication history
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Acknowledgements

Publication history

Received: 21 November 2019
Revised: 17 May 2020
Accepted: 21 May 2020
Published: 15 July 2020
Issue date: October 2020

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020

Acknowledgements

We would like to acknowledge the collaboration of this research with King Abdul-Aziz City for Science and Technology (KACST) via The Center of Excellence for Nanotechnologies (CEGN). A portion of the images and data used in this article were generated at the Core Center of Excellence in Nano Imaging (CNI), University of Southern California.

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