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GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb- GaAsxSb1-x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of -0.88% and a hydrostatic strain of -1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system.


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Compressively-strained GaSb nanowires with core-shell heterostructures

Show Author's information Zhongyunshen Zhu1( )Johannes Svensson1Axel R. Persson2,3Reine Wallenberg2,3Andrei V. Gromov4Lars-Erik Wernersson1
Department of Electrical and Information Technology, Lund University, Box 118, 221 00 Lund, Sweden
Centre for Analysis and Synthesis, Lund University, Box 124, 221 00 Lund, Sweden
NanoLund, Lund University, Box 118, 221 00 Lund, Sweden
EaStCHEM, School of Chemistry, University of Edinburgh, Edinburgh EH9 3FJ, UK

Abstract

GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors, however they require the introduction of compressive strain to enhance the transport properties. Here, we for the first time demonstrate epitaxial GaSb- GaAsxSb1-x core-shell nanowires with a compressively strained core. Both axial and hydrostatic strain in GaSb core have been measured by X-ray diffraction (XRD) and Raman scattering, respectively. The optimal sample, almost without plastic relaxation, has an axial strain of -0.88% and a hydrostatic strain of -1.46%, leading to a noticeable effect where the light hole band is calculated to be 33.4 meV above the heavy hole band at the Γ-point. This valence band feature offers more light holes to contribute the transport process, and thus may provide enhanced hole mobility by reducing both the interband scattering and the hole effective mass. Our results show that lattice-mismatched epitaxial core-shell heterostructures of high quality can also be realized in the promising yet demanding GaSb-based system.

Keywords:

compressive strain, GaSb-GaAsxSb1-x, core-shell, nanowires, heterostructure, p-type transistors
Received: 19 March 2020 Revised: 27 April 2020 Accepted: 18 May 2020 Published: 19 June 2020 Issue date: September 2020
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Publication history

Received: 19 March 2020
Revised: 27 April 2020
Accepted: 18 May 2020
Published: 19 June 2020
Issue date: September 2020

Copyright

© The Author(s) 2020

Acknowledgements

This work was supported by the Swedish Research Council (VR), and the Swedish Foundation for Strategic Research (SSF).

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