References(56)
[1]
Tomioka, K.; Yoshimura, M.; Fukui, T. A III-V nanowire channel on silicon for high-performance vertical transistors. Nature 2012, 488, 189-192.
[2]
Svensson, J.; Dey, A. W.; Jacobsson, D.; Wernersson, L. E. III-V nanowire complementary metal-oxide semiconductor transistors monolithically integrated on Si. Nano Lett. 2015, 15, 7898-7904.
[3]
Kilpi, O. P.; Svensson, J.; Wu, J.; Persson, A. R.; Wallenberg, R.; Lind, E.; Wernersson, L. E. Vertical InAs/InGaAs heterostructure metal-oxide- semiconductor field-effect transistors on Si. Nano Lett. 2017, 17, 6006-6010.
[4]
Jönsson, A.; Svensson, J.; Wernersson, L. E. A self-aligned gate-last process applied to all-III-V CMOS on Si. IEEE Electron Device Lett. 2018, 39, 935-938.
[5]
Lynall, D.; Nair, S. V.; Gutstein, D.; Shik, A.; Savelyev, I. G.; Blumin, M.; Ruda, H. E. Surface state dynamics dictating transport in InAs nanowires. Nano Lett. 2018, 18, 1387-1395.
[6]
del Alamo, J. A. Nanometre-scale electronics with III-V compound semiconductors. Nature 2011, 479, 317-323.
[7]
Kilpi, O. P.; Svensson, J.; Lind, E.; Wernersson, L. E. Electrical properties of vertical InAs/InGaAs heterostructure MOSFETs. IEEE J. Electron Devices Soc. 2019, 7, 70-75.
[8]
Dey, A. W.; Svensson, J.; Borg, B. M.; Ek, M.; Wernersson, L. E. Single InAs/GaSb nanowire low-power CMOS inverter. Nano Lett. 2012, 12, 5593-5597.
[9]
Oktyabrsky, S. P-type channel field-effect transistors. In Fundamentals of III-V Semiconductor MOSFETs. Oktyabrsky, S.; Ye, P., Eds.; Springer: Boston, MA, 2010; pp 349-378.
[10]
Borg, M.; Schmid, H.; Gooth, J.; Rossell, M. D.; Cutaia, D.; Knoedler, M.; Bologna, N.; Wirths, S.; Moselund, K. E.; Riel, H. High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano 2017, 11, 2554-2560.
[11]
Yang, Z. X.; Yip, S.; Li, D. P.; Han, N.; Dong, G. F.; Liang, X. G.; Shu, L.; Hung, T. F.; Mo, X. L.; Ho, J. C. Approaching the hole mobility limit of GaSb nanowires. ACS Nano 2015, 9, 9268-9275.
[12]
Yang, Z. X.; Liu, L. Z.; Yip, S.; Li, D. P.; Shen, L. F.; Zhou, Z. Y.; Han, N.; Hung, T. F.; Pun, E. Y. B.; Wu, X. L. et al. Complementary metal oxide semiconductor-compatible, high-mobility, ⟨111⟩-oriented GaSb nanowires enabled by vapor-solid-solid chemical vapor deposition. ACS Nano 2017, 11, 4237-4246.
[13]
Sun, J. M.; Peng, M.; Zhang, Y. S.; Zhang, L.; Peng, R.; Miao, C. C.; Liu, D.; Han, M. M.; Feng, R. F.; Ma, Y. D. et al. Ultrahigh hole mobility of Sn-catalyzed GaSb nanowires for high speed infrared photodetectors. Nano Lett. 2019, 19, 5920-5929.
[14]
Chen, Y. W.; Tan, Z.; Zhao, L. F.; Wang, J.; Liu, Y. Z.; Si, C.; Yuan, F.; Duan, W. H.; Xu, J. Mobility enhancement of strained GaSb p-channel metal-oxide-semiconductor field-effect transistors with biaxial compressive strain. Chin. Phys. B 2016, 25, 038504.
[15]
Bennett, B. R.; Ancona, M. G.; Boos, J. B.; Canedy, C. B.; Khan, S. A. Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. J. Cryst. Growth 2008, 311, 47-53.
[16]
Bennett, B. R.; Chick, T. F.; Ancona, M. G.; Brad Boos, J. Enhanced hole mobility and density in GaSb quantum wells. Solid State Electron. 2013, 79, 274-280.
[17]
Borg, B. M.; Dick, K. A.; Ganjipour, B.; Pistol, M. E.; Wernersson, L. E.; Thelander, C. InAs/GaSb heterostructure nanowires for tunnel field-effect transistors. Nano Lett. 2010, 10, 4080-4085.
[18]
Wang, X. Y.; Du, W. N.; Yang, X. G.; Zhang, X. W.; Yang, T. Self-catalyzed growth mechanism of InAs nanowires and growth of InAs/GaSb heterostructured nanowires on Si substrates. J. Cryst. Growth 2015, 426, 287-292.
[19]
Jeppsson, M.; Dick, K. A.; Wagner, J. B.; Caroff, P.; Deppert, K.; Samuelson, L.; Wernersson, L. E. GaAs/GaSb nanowire heterostructures grown by MOVPE. J. Cryst. Growth 2008, 310, 4115-4121.
[20]
Zamani, R. R.; Gorji Ghalamestani, S.; Niu, J.; Sköld, N.; Dick, K. A. Polarity and growth directions in Sn-seeded GaSb nanowires. Nanoscale 2017, 9, 3159-3168.
[21]
Ye, H.; Lu, P. F.; Yu, Z. Y.; Song, Y. X.; Wang, D. L.; Wang, S. M. Critical thickness and radius for axial heterostructure nanowires using finite-element method. Nano Lett. 2009, 9, 1921-1925.
[22]
Grönqvist, J.; Søndergaard, N.; Boxberg, F.; Guhr, T.; Åberg, S.; Xu, H. Q. Strain in semiconductor core-shell nanowires. J. Appl. Phys. 2009, 106, 053508.
[23]
Glas, F. Strain in nanowires and nanowire heterostructures. In Semiconductors and Semimetals. Morral, A. F. I.; Dayeh, S. A.; Jagadish, C., Eds.; Elsevier: United States, 2015; pp 79-123.
[24]
Lewis, R. B.; Nicolai, L.; Küpers, H.; Ramsteiner, M.; Trampert, A.; Geelhaar, L. Anomalous strain relaxation in core-shell nanowire heterostructures via simultaneous coherent and incoherent growth. Nano Lett. 2017, 17, 136-142.
[25]
Balaghi, L.; Bussone, G.; Grifone, R.; Hübner, R.; Grenzer, J.; Ghorbani-Asl, M.; Krasheninnikov, A. V.; Schneider, H.; Helm, M.; Dimakis, E. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch. Nat. Commun. 2019, 10, 2793.
[26]
Göransson, D. J. O.; Borgström, M. T.; Huang, Y. Q.; Messing, M. E.; Hessman, D.; Buyanova, I. A.; Chen, W. M.; Xu, H. Q. Measurements of strain and bandgap of coherently epitaxially grown wurtzite InAsP-InP core-shell nanowires. Nano Lett. 2019, 19, 2674-2681.
[27]
Lazarev, S.; Göransson, D. J. O.; Borgström, M.; Messing, M. E.; Xu, H. Q.; Dzhigaev, D.; Yefanov, O. M.; Bauer, S.; Baumbach, T.; Feidenhans’l, R. et al. Revealing misfit dislocations in InAsxP1-x-InP core-shell nanowires by X-ray diffraction. Nanotechnology 2019, 30, 505703.
[28]
Sun, Y.; Thompson, S. E.; Nishida, T. Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 2007, 101, 104503.
[29]
Sun, Y. K.; Thompson, S. E.; Nishida, T. Strain Effect in Semiconductors: Theory and Device Applications; Springer: Boston, MA, 2010.
[30]
Gluschke, J. G.; Leijnse, M.; Ganjipour, B.; Dick, K. A.; Linke, H.; Thelander, C. Characterization of ambipolar GaSb/InAs core-shell nanowires by thermovoltage measurements. ACS Nano 2015, 9, 7033-7040.
[31]
Vasen, T.; Ramvall, P.; Afzalian, A.; Doornbos, G.; Holland, M.; Thelander, C.; Dick, K. A.; Wernersson, L. E.; Passlack, M. Vertical gate-all-around nanowire GaSb-InAs core-shell n-type tunnel FETs. Sci. Rep. 2019, 9, 202.
[32]
Ganjipour, B.; Ek, M.; Mattias Borg, B.; Dick, K. A.; Pistol, M. E.; Wernersson, L. E.; Thelander, C. Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires. Appl. Phys. Lett. 2012, 101, 103501.
[33]
Salehzadeh, O.; Kavanagh, K. L.; Watkins, S. P. Growth and strain relaxation of GaAs and GaP nanowires with GaSb shells. J. Appl. Phys. 2013, 113, 134309.
[34]
Montazeri, M.; Fickenscher, M.; Smith, L. M.; Jackson, H. E.; Yarrison-Rice, J.; Kang, J. H.; Gao, Q.; Tan, H. H.; Jagadish, C.; Guo, Y. et al. Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires. Nano Lett. 2010, 10, 880-886.
[35]
Ek, M.; Borg, B. M.; Johansson, J.; Dick, K. A. Diameter limitation in growth of III-Sb-containing nanowire heterostructures. ACS Nano 2013, 7, 3668-3675.
[36]
Yang, Z. X.; Han, N.; Fang, M.; Lin, H.; Cheung, H. Y.; Yip, S.; Wang, E. J.; Hung, T.; Wong, C. Y.; Ho, J. C. Surfactant-assisted chemical vapour deposition of high-performance small-diameter GaSb nanowires. Nat. Commun. 2014, 5, 5249.
[37]
Namazi, L.; Nilsson, M.; Lehmann, S.; Thelander, C.; Dick, K. A. Selective GaSb radial growth on crystal phase engineered InAs nanowires. Nanoscale 2015, 7, 10472-10481.
[38]
Borg, B. M.; Dick, K. A.; Eymery, J.; Wernersson, L. E. Enhanced Sb incorporation in InAsSb nanowires grown by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 2011, 98, 113104.
[39]
Koblmüller, G.; Hertenberger, S.; Vizbaras, K.; Bichler, M.; Bao, F.; Zhang, J. P.; Abstreiter, G. Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy. Nanotechnology 2010, 21, 365602.
[40]
Çakan, A.; Sevik, C.; Bulutay, C. Strained band edge characteristics from hybrid density functional theory and empirical pseudopotentials: GaAs, GaSb, InAs and InSb. J. Phys. D: Appl. Phys. 2016, 49, 085104.
[41]
Dayeh, S. A.; Tang, W.; Boioli, F.; Kavanagh, K. L.; Zheng, H.; Wang, J.; Mack, N. H.; Swadener, G.; Huang, J. Y.; Miglio, L. et al. Direct measurement of coherency limits for strain relaxation in heteroepitaxial core/shell nanowires. Nano Lett. 2013, 13, 1869-1876.
[42]
Raychaudhuri, S.; Yu, E. T. Critical dimensions in coherently strained coaxial nanowire heterostructures. J. Appl. Phys. 2006, 99, 114308.
[43]
Aoki, K.; Anastassakis, E.; Cardona, M. Dependence of Raman frequencies and scattering intensities on pressure in GaSb, InAs, and InSb semiconductors. Phys. Rev. B 1984, 30, 681-687.
[44]
Arora, A. K.; Rajalakshmi, M.; Ravindran, T. R.; Sivasubramanian, V. Raman spectroscopy of optical phonon confinement in nanostructured materials. J. Raman Spectrosc. 2007, 38, 604-617.
[45]
Cerdeira, F.; Buchenauer, C. J.; Pollak, F. H.; Cardona, M. Stress-induced shifts of first-order Raman frequencies of diamond- and zinc-blende-type semiconductors. Phys. Rev. B 1972, 5, 580-593.
[46]
Van de Walle, C. G. Band lineups and deformation potentials in the model-solid theory. Phys. Rev. B 1989, 39, 1871-1883.
[47]
Li, S. S. Scattering mechanisms and carrier mobilities in semiconductors. In Semiconductor Physical Electronics; Li, S. S., Ed.; Springer: New York, 2006; pp 211-245.
[48]
Silver, M.; Batty, W.; Ghiti, A.; O’Reilly, E. P. Strain-induced valence-subband splitting in III-V semiconductors. Phys. Rev. B 1992, 46, 6781-6788.
[49]
Nainani, A.; Kim, D.; Krishnamohan, T.; Saraswat, K. Hole mobility and its enhancement with strain for technologically relevant III-V semiconductors. In 2009 International Conference on Simulation of Semiconductor Processes and Devices, San Diego, CA, USA, 2009, pp 1-4.
[50]
Thompson, S.; Sun, G.; Wu, K.; Lim, J.; Nishida, T. Key differences for process-induced uniaxial vs. Substrate-induced biaxial stressed Si and Ge channel MOSFETs. In IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. San Francisco, CA, USA, 2004, pp 221-224.
[51]
Goldthorpe, I. A.; Marshall, A. F.; McIntyre, P. C. Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays. Nano Lett. 2008, 8, 4081-4086.
[52]
Hashemi, P.; Gomez, L.; Canonico, M.; Hoyt, J. L. Electron transport in gate-all-around uniaxial tensile strained-Si nanowire n-MOSFETs. In 2008 IEEE International Electron Devices Meeting, San Francisco, CA, USA, 2008, pp 1-4.
[53]
Signorello, G.; Karg, S.; Björk, M. T.; Gotsmann, B.; Riel, H. Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain. Nano Lett. 2013, 13, 917-924.
[54]
Boxberg, F.; Søndergaard, N.; Xu, H. Q. Elastic and piezoelectric properties of zincblende and wurtzite crystalline nanowire heterostructures. Adv. Mater. 2012, 24, 4692-4706.
[55]
Kavanagh, K. L. Misfit dislocations in nanowire heterostructures. Semicond. Sci. Technol. 2010, 25, 024006.
[56]
Biermanns, A.; Rieger, T.; Bussone, G.; Pietsch, U.; Grützmacher, D.; Ion Lepsa, M. Axial strain in GaAs/InAs core-shell nanowires. Appl. Phys. Lett. 2013, 102, 043109.