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Research Article

Direct laser patterning of two-dimensional lateral transition metal disulfide-oxide-disulfide heterostructures for ultrasensitive sensors

Bolun Wang1Hao Luo1Xuewen Wang1Enze Wang1Yufei Sun1Yu-Chien Tsai2Jinxuan Dong3Peng Liu2Huanglong Li4Yong Xu3,5Sefaattin Tongay6Kaili Jiang2,3Shoushan Fan2,3Kai Liu1( )
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
Department of Precision Instrument, Center for Brain Inspired Computing Research, Tsinghua University, Beijing 100084, China
RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA
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Abstract

Two-dimensional (2D) heterostructures based on the combination of transition metal dichalcogenides (TMDs) and transition metal oxides (TMOs) have aroused growing attention due to their integrated merits of both components and multiple functionalities. However, nondestructive approaches of constructing TMD-TMO heterostructures are still very limited. Here, we develop a novel type of lateral TMD-TMO heterostructure (NbS2-Nb2O5-NbS2) using a simple lithography-free, direct laser-patterning technique. The perfect contact of an ultrathin TMO channel (Nb2O5) with two metallic TMDs (NbS2) electrodes guarantee strong electrical signals in a two-terminal sensor. Distinct from sensing mechanisms in separate TMOs or TMDs, this sensor works based on the modulation of surface conduction of the ultrathin TMO (Nb2O5) channel through an adsorbed layer of water molecules. The sensor thus exhibits high selectivity and ultrahigh sensitivity for room-temperature detection of NH3R/R = 80% at 50 ppm), superior to the reported NH3 sensors based on 2D materials, and a positive temperature coefficient of resistance as high as 15%-20%/°C. Bending-invariant performance and high reliability are also demonstrated in flexible versions of sensors. Our work provides a new strategy of lithography-free processing of novel TMD-TMO heterostructures towards high-performance sensors, showing great potential in the applications of future portable and wearable electronics.

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Nano Research
Pages 2035-2043

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Cite this article:
Wang B, Luo H, Wang X, et al. Direct laser patterning of two-dimensional lateral transition metal disulfide-oxide-disulfide heterostructures for ultrasensitive sensors. Nano Research, 2020, 13(8): 2035-2043. https://doi.org/10.1007/s12274-020-2872-z
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Received: 12 April 2020
Revised: 03 May 2020
Accepted: 10 May 2020
Published: 05 August 2020
© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2020