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Nano Research 2021, 14(6): 1802-1813 https://doi.org/10.1007/s12274-020-2860-3
Review Article | Issue | Published: 29 May 2020

Ferromagnetic and ferroelectric two-dimensional materials for memory application

Show Author's Information Zhen Liu1,2,3,  Longjiang Deng1,2,3,  Bo Peng1,2,3( )
National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China
Keywords:
two-dimensional (2D) materials, heterostructure, ferroelectric, ferromagnetic, nonvolatile memory
Topics:
Ferromagnetic materials FerromagnetismVan der Waals forces
Cite this article:
Liu Z, Deng L, Peng B. Ferromagnetic and ferroelectric two-dimensional materials for memory application. Nano Research, 2021, 14(6): 1802-1813. https://doi.org/10.1007/s12274-020-2860-3
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Abstract Full text About this article

The discoveries of ferromagnetic and ferroelectric two-dimensional (2D) materials have dramatically inspired intense interests due to their potential in the field of spintronic and nonvolatile memories. This review focuses on the latest 2D ferromagnetic and ferroelectric materials that have been most recently studied, including insulating ferromagnetic, metallic ferromagnetic, antiferromagnetic and ferroelectric 2D materials. The fundamental properties that lead to the long-range magnetic orders of 2D materials are discussed. The low Curie temperature (Tc) and instability in 2D systems limits their use in practical applications, and several strategies to address this constraint are proposed, such as gating and composition stoichiometry. A van der Waals (vdW) heterostructure comprising 2D ferromagnetic and ferroelectric materials will open a door to exploring exotic physical phenomena and achieve multifunctional or nonvolatile devices.


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About this article

Ferromagnetic and ferroelectric two-dimensional materials for memory application

Show Author's information Zhen Liu1,2,3, Longjiang Deng1,2,3, Bo Peng1,2,3( )
National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 611731, China

Abstract

The discoveries of ferromagnetic and ferroelectric two-dimensional (2D) materials have dramatically inspired intense interests due to their potential in the field of spintronic and nonvolatile memories. This review focuses on the latest 2D ferromagnetic and ferroelectric materials that have been most recently studied, including insulating ferromagnetic, metallic ferromagnetic, antiferromagnetic and ferroelectric 2D materials. The fundamental properties that lead to the long-range magnetic orders of 2D materials are discussed. The low Curie temperature (Tc) and instability in 2D systems limits their use in practical applications, and several strategies to address this constraint are proposed, such as gating and composition stoichiometry. A van der Waals (vdW) heterostructure comprising 2D ferromagnetic and ferroelectric materials will open a door to exploring exotic physical phenomena and achieve multifunctional or nonvolatile devices.

Keywords: two-dimensional (2D) materials, heterostructure, ferroelectric, ferromagnetic, nonvolatile memory

References(134)

[1]
R. Peierls, Quelques propriétés typiques des corps solides. Ann. I. H. Poincaré. 1935, 5, 177-222.
Google Scholar
[2]
L. D. Landau, Zur theorie der phasenumwandlungen II. Phys. Z. Sowjet. 1937, 11, 26-35.
Google Scholar
[3]
A. K. Geim,; K. S. Novoselov, The rise of graphene. Nat. Mater. 2007, 6, 183-191.
DOI Google Scholar
[4]
N. D. Mermin,; H. Wagner, Absence of ferromagnetism or antiferromagnetism in one- or two-dimensional isotropic heisenberg models. Phys. Rev. Lett. 1966, 17, 1133-1136.
DOI Google Scholar
[5]
N. D. Mermin, Crystalline order in two dimensions. Phys. Rev. 1968, 176, 250-254.
DOI Google Scholar
[6]
K. S. Novoselov,; A. K. Geim,; S. V. Morozov,; D. Jiang,; Y. Zhang,; S. V. Dubonos,; I. V. Grigorieva,; A. A. Firsov, Electric field effect in atomically thin carbon films. Science 2004, 306, 666-669.
DOI Google Scholar
[7]
X. X. Xi,; L. Zhao,; Z. F. Wang,; H. Berger,; L. Forró,; J. Shan,; K. F. Mak, Strongly enhanced charge-density-wave order in monolayer NbSe2. Nat. Nanotechnol. 2015, 10, 765-769.
DOI Google Scholar
[8]
K. F. Mak,; C. Lee,; J. Hone,; J. Shan,; T. F. Heinz, Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.
DOI Google Scholar
[9]
V. Fatemi,; S. F. Wu,; Y. Cao,; L. Bretheau,; Q. D. Gibson,; K. Watanabe,; T. Taniguchi,; R. J. Cava,; P. Jarillo-Herrero, Electrically tunable low-density superconductivity in a monolayer topological insulator. Science 2018, 362, 926-929.
DOI Google Scholar
[10]
C. J. Cui,; W. J. Hu,; X. X. Yan,; C. Addiego,; W. P. Gao,; Y. Wang,; Z. Wang,; L. Z. Li,; Y. C. Cheng,; P. Li, et al. Intercorrelated in-plane and out-of-plane ferroelectricity in ultrathin two-dimensional layered semiconductor In2Se3. Nano Lett. 2018, 18, 1253-1258.
DOI Google Scholar
[11]
Y. Zhou,; D. Wu,; Y. H. Zhu,; Y. J. Cho,; Q. He,; X. Yang,; K. Herrera,; Z. D. Chu,; Y. Han,; M. C. Downer, et al. Out-of-plane piezoelectricity and ferroelectricity in layered α-In2Se3 nanoflakes. Nano Lett. 2017, 17, 5508-5513.
DOI Google Scholar
[12]
S. G. Yuan,; X. Luo,; H. L. Chan,; C. C. Xiao,; Y. W. Dai,; M. H. Xie,; J. H. Hao, Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit. Nat. Commun. 2019, 10, 1775.
DOI Google Scholar
[13]
B. Huang,; G. Clark,; E. Navarro-Moratalla,; D. R. Klein,; R. Cheng,; K. L. Seyler,; D. Zhong,; E. Schmidgall,; M. A. McGuire,; D. H. Cobden, et al. Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit. Nature 2017, 546, 270-273.
DOI Google Scholar
[14]
C. Gong,; L. Li,; Z. L. Li,; H. W. Ji,; A. Stern,; Y. Xia,; T. Cao,; W. Bao,; C. Z. Wang,; Y. Wang, et al. Discovery of intrinsic ferromagnetism in two-dimensional van der Waals crystals. Nature 2017, 546, 265-269.
DOI Google Scholar
[15]
J. F., Dillon, Jr.; H. Kamimura,; J. P. Remeika, Magneto-optical properties of ferromagnetic chromium trihalides. J. Phys. Chem. Solids 1966, 27, 1531-1549.
DOI Google Scholar
[16]
J. Suits, Faraday and kerr effects in magnetic compounds. IEEE Trans. Magn. 1972, 8, 95-105.
DOI Google Scholar
[17]
J. Zhang,; J. M. Soon,; K. P. Loh,; J. H. Yin,; J. Ding,; M. B. Sullivian,; P. Wu, Magnetic molybdenum disulfide nanosheet films. Nano Lett. 2007, 7, 2370-2376.
DOI Google Scholar
[18]
A. R. Botello-Méndez,; F. López-Urías,; M. Terrones,; H. Terrones, Metallic and ferromagnetic edges in molybdenum disulfide nanoribbons. Nanotechnology 2009, 20, 325703.
DOI Google Scholar
[19]
Y. F. Li,; Z. Zhou,; S. B. Zhang,; Z. F. Chen, MoS2 Nanoribbons: High stability and unusual electronic and magnetic properties. J. Am. Chem. Soc. 2008, 130, 16739-16744.
DOI Google Scholar
[20]
C. Ataca,; S. Ciraci, Functionalization of single-layer MoS2 honeycomb structures. J. Phys. Chem. C 2011, 115, 13303-13311.
DOI Google Scholar
[21]
A. Ramasubramaniam,; D. Naveh, Mn-doped monolayer MoS2: An atomically thin dilute magnetic semiconductor. Phys. Rev. B 2013, 87, 195201.
DOI Google Scholar
[22]
K. H. Zhang,; S. M. Feng,; J. J. Wang,; A. Azcatl,; N. Lu,; R. Addou,; N. Wang,; C. J. Zhou,; J. Lerach,; V. Bojan, et al. Manganese doping of monolayer MoS2: The substrate is critical. Nano Lett. 2015, 15, 6586-6591.
DOI Google Scholar
[23]
V. Kochat,; A. Apte,; J. A. Hachtel,; H. Kumazoe,; A. Krishnamoorthy,; S. Susarla,; J. C. Idrobo,; F. Shimojo,; P. Vashishta,; R. Kalia, et al. Re doping in 2D transition metal dichalcogenides as a new route to tailor structural phases and induced magnetism. Adv. Mater. 2017, 29, 1703754.
DOI Google Scholar
[24]
P. J Zhao,; J. M. Zheng,; P. Guo,; Z. Y. Jiang,; L. K. Cao,; Y. Wan, Electronic and magnetic properties of Re-doped single-layer MoS2: A DFT study. Comp. Mater. Sci. 2017, 128, 287-293.
DOI Google Scholar
[25]
A. M. Hu,; L. L. Wang,; W. Z. Xiao,; G. Xiao,; Q. Y. Rong, Electronic structures and magnetic properties in nonmetallic element substituted MoS2 monolayer. Comp. Mater. Sci. 2015, 107, 72-78.
DOI Google Scholar
[26]
H. L. Shi,; H. Pan,; Y. W. Zhang,; B. I. Yakobson, Strong ferromagnetism in hydrogenated monolayer MoS2 tuned by strain. Phys. Rev. B 2013, 88, 205305.
DOI Google Scholar
[27]
C. T. Kuo,; M. Neumann,; K. Balamurugan,; H. J. Park,; S. Kang,; H. W. Shiu,; J. H. Kang,; B. H. Hong,; M. Han,; T. W. Noh, et al. Exfoliation and Raman spectroscopic fingerprint of few-layer NiPS3 van der Waals crystals. Sci. Rep. 2016, 6, 20904.
DOI Google Scholar
[28]
K. Z. Du,; X. Z. Wang,; Y. Liu,; P. Hu,; M. I. B. Utama,; C. K. Gan,; Q. H. Xiong,; C. Kloc, Weak van der Waals stacking, wide-range band gap, and Raman study on ultrathin layers of metal phosphorus trichalcogenides. ACS Nano 2016, 10, 1738-1743.
DOI Google Scholar
[29]
J. U. Lee,; S. Lee,; J. H. Ryoo,; S. Kang,; T. Y. Kim,; P. Kim,; C. H. Park,; J. G. Park,; H. Cheong, Ising-type magnetic ordering in atomically thin FePS3. Nano Lett. 2016, 16, 7433-7438.
DOI Google Scholar
[30]
M. W. Lin,; H. L. Zhuang,; J. Q. Yan,; T. Z. Ward,; A. A. Puretzky,; C. M. Rouleau,; Z. Gai,; L. B. Liang,; V. Meunier,; B. G. Sumpter, et al. Ultrathin nanosheets of CrSiTe3: A semiconducting two- dimensional ferromagnetic material. J. Mater. Chem. C 2016, 4, 315-322.
DOI Google Scholar
[31]
Y. J. Deng,; Y. J. Yu,; Y. C. Song,; J. Z. Zhang,; N. Z. Wang,; Z. Y. Sun,; Y. F. Yi,; Y. Z. Wu,; S. W. Wu,; J. Y. Zhu, et al. Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2. Nature 2018, 563, 94-99.
DOI Google Scholar
[32]
M. Bonilla,; S. Kolekar,; Y. J. Ma,; H. C. Diaz,; V. Kalappattil,; R. Das,; T. Eggers,; H. R. Gutierrez,; M. H. Phan,; M. Batzill, Strong room-temperature ferromagnetism in VSe2 monolayers on van der Waals substrates. Nat. Nanotechnol. 2018, 13, 289-293.
DOI Google Scholar
[33]
D. J. O’Hara,; T. C. Zhu,; A. H. Trout,; A. S. Ahmed,; Y. K. Luo,; C. H. Lee,; M. R. Brenner,; S. Rajan,; J. A. Gupta,; D. W. McComb, et al. Room temperature intrinsic ferromagnetism in epitaxial manganese selenide films in the monolayer limit. Nano Lett. 2018, 18, 3125-3131.
DOI Google Scholar
[34]
H. L. Zhuang,; R. G. Hennig, Stability and magnetism of strongly correlated single-layer VS2. Phys. Rev. B 2016, 93, 054429.
DOI Google Scholar
[35]
M. Kan,; S. Adhikari,; Q. Sun, Ferromagnetism in MnX2 (X = S, Se) monolayers. Phys. Chem. Chem. Phys. 2014, 16, 4990-4994.
DOI Google Scholar
[36]
N. Sivadas,; M. W. Daniels,; R. H. Swendsen,; S. Okamoto,; D. Xiao, Magnetic ground state of semiconducting transition-metal trichalcogenide monolayers. Phys. Rev. B 2015, 91, 235425.
DOI Google Scholar
[37]
H. L. Zhuang,; Y. Xie,; P. R. C. Kent,; P. Ganesh, Computational discovery of ferromagnetic semiconducting single-layer CrSnTe3. Phys. Rev. B 2015, 92, 035407.
DOI Google Scholar
[38]
W. B. Zhang,; Q. Qu,; P. Zhu,; C. H. Lam, Robust intrinsic ferromagnetism and half semiconductivity in stable two-dimensional single-layer chromium trihalides. J. Mater. Chem. C 2015, 3, 12457-12468.
DOI Google Scholar
[39]
J. J. He,; S. Y. Ma,; P. Lyu,; P. Nachtigall, Unusual Dirac half- metallicity with intrinsic ferromagnetism in vanadium trihalide monolayers. J. Mater. Chem. C 2016, 4, 2518-2526.
DOI Google Scholar
[40]
Q. L. Sun,; N. Kioussis, Prediction of manganese trihalides as two- dimensional Dirac half-metals. Phys. Rev. B 2018, 97, 094408.
DOI Google Scholar
[41]
C. X. Huang,; J. Zhou,; H. P. Wu,; K. M. Deng,; P. Jena,; E. J. Kan, Quantum anomalous Hall effect in ferromagnetic transition metal halides. Phys. Rev. B 2017, 95, 045113.
DOI Google Scholar
[42]
H. Kumar,; N. C. Frey,; L. Dong,; B. Anasori,; Y. Gogotsi,; V. B. Shenoy, Tunable magnetism and transport properties in nitride MXenes. ACS Nano 2017, 11, 7648-7655.
DOI Google Scholar
[43]
J. J. He,; P. Lyu,; P. Nachtigall, New two-dimensional Mn-based MXenes with room-temperature ferromagnetism and half-metallicity. J. Mater. Chem. C 2016, 4, 11143-11149.
DOI Google Scholar
[44]
Y. Z. Zhang,; X. Wang,; Y. Feng,; J. Li,; C. T. Lim,; S. Ramakrishna, Coaxial electrospinning of (fluorescein isothiocyanate-conjugated bovine serum albumin)-encapsulated poly(ε-caprolactone) nanofibers for sustained release. Biomacromolecules 2006, 7, 1049-1057.
DOI Google Scholar
[45]
M. Khazaei,; M. Arai,; T. Sasaki,; C. Y. Chung,; N. S. Venkataramanan,; M. Estili,; Y. Sakka,; Y. Kawazoe, Novel electronic and magnetic properties of two-dimensional transition metal carbides and nitrides. Adv. Funct. Mater. 2013, 23, 2185-2192.
DOI Google Scholar
[46]
Y. L. Yue, Fe2C monolayer: An intrinsic ferromagnetic MXene. J. Magn. Magn. Mater. 2017, 434, 164-168.
DOI Google Scholar
[47]
Y. J. Sun,; Z. W. Zhuo,; X. J. Wu,; J. L. Yang, Room-temperature ferromagnetism in two-dimensional Fe2Si nanosheet with enhanced spin-polarization ratio. Nano Lett. 2017, 17, 2771-2777.
DOI Google Scholar
[48]
T. S. Zhao,; J. Zhou,; Q. Wang,; Y. Kawazoe,; P. Jena, Ferromagnetic and half-metallic FeC2 monolayer containing C2 dimers. ACS Appl. Mater. Interfaces 2016, 8, 26207-26212.
DOI Google Scholar
[49]
M. Kan,; J. Zhou,; Q. Sun,; Y. Kawazoe,; P. Jena, The intrinsic ferromagnetism in a MnO2 monolayer. J. Phys. Chem. Lett. 2013, 4, 3382-3386.
DOI Google Scholar
[50]
J. C. Wu,; X. Peng,; Y. Q. Guo,; H. D. Zhou,; J. Y. Zhao,; K. Q. Ruan,; W. S. Chu,; C. Z. Wu, Ultrathin nanosheets of Mn3O4: A new two-dimensional ferromagnetic material with strong magnetocrystalline anisotropy. Front. Phys. 2018, 13, 138110.
DOI Google Scholar
[51]
K. Zhang,; R. Khan,; H. Y. Guo,; I. Ali,; X. L. Li,; Y. X. Lin,; H. P. Chen,; W. S. Yan,; X. J. Wu,; L. Song, Room-temperature ferromagnetism in the two-dimensional layered Cu2MoS4 nanosheets. Phys. Chem. Chem. Phys. 2017, 19, 1735-1739.
DOI Google Scholar
[52]
B. Sachs,; T. O. Wehling,; K. S. Novoselov,; A. I. Lichtenstein,; M. I. Katsnelson, Ferromagnetic two-dimensional crystals: Single layers of K2CuF4. Phys. Rev. B 2013, 88, 201402.
DOI Google Scholar
[53]
S. H. Zhang,; Y. W. Li,; T. S. Zhao,; Q. Wang, Robust ferromagnetism in monolayer chromium nitride. Sci. Rep. 2014, 4, 5241.
DOI Google Scholar
[54]
Y. Zhang,; J. M. Pang,; M. G. Zhang,; X. Gu,; L. Huang, Two- dimensional Co2S2 monolayer with robust ferromagnetism. Sci. Rep. 2017, 7, 15993.
DOI Google Scholar
[55]
R. C. G. Naber,; C. Tanase,; P. W. M. Blom,; G. H. Gelinck,; A. W. Marsman,; F. J. Touwslager,; S. Setayesh,; D. M. de Leeuw, High-performance solution-processed polymer ferroelectric field- effect transistors. Nat. Mater. 2005, 4, 243-248.
DOI Google Scholar
[56]
A. Q. Jiang,; C. Wang,; K. J. Jin,; X. B. Liu,; J. F. Scott,; C. S. Hwang,; T. A. Tang,; H. B. Lu,; G. Z. Yang, A resistive memory in semiconducting BiFeO3 thin-film capacitors. Adv. Mater. 2011, 23, 1277-1281.
DOI Google Scholar
[57]
R. C. G. Naber,; K. Asadi,; P. W. M. Blom,; D. M. De Leeuw,; B. De Boer, Organic nonvolatile memory devices based on ferroelectricity. Adv. Mater. 2010, 22, 933-945.
DOI Google Scholar
[58]
G. Catalan,; J. F. Scott, Physics and applications of bismuth ferrite. Adv. Mater. 2009, 21, 2463-2485.
DOI Google Scholar
[59]
J. F. Scott, Applications of modern ferroelectrics. Science 2007, 315, 954-959.
DOI Google Scholar
[60]
J. Valasek, Piezo-electric and allied phenomena in rochelle salt. Phys. Rev. 1921, 17, 475-481.
DOI Google Scholar
[61]
D. D. Fong,; G. B. Stephenson,; S. K. Streiffer,; J. A. Eastman,; O. Auciello,; P. H. Fuoss,; C. Thompson, Ferroelectricity in ultrathin perovskite films. Science 2004, 304, 1650-1653.
DOI Google Scholar
[62]
E. Y. Tsymbal,; H. Kohlstedt, Tunneling across a ferroelectric. Science 2006, 313, 181-183.
DOI Google Scholar
[63]
W. L. Zhong,; Y. G. Wang,; P. L. Zhang,; B. D. Qu, Phenomenological study of the size effect on phase transitions in ferroelectric particles. Phys. Rev. B 1994, 50, 698-703.
DOI Google Scholar
[64]
J. Junquera,; P. Ghosez, Critical thickness for ferroelectricity in perovskite ultrathin films. Nature 2003, 422, 506-509.
DOI Google Scholar
[65]
A. Gruverman,; D. Wu,; H. Lu,; Y. Wang,; H. W. Jang,; C. M. Folkman,; M. Y. Zhuravlev,; D. Felker,; M. Rzchowski,; C. B. Eom, et al. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Lett. 2009, 9, 3539-3543.
DOI Google Scholar
[66]
H. Wang,; Z. R. Liu,; H. Y. Yoong,; T. R. Paudel,; J. X. Xiao,; R. Guo,; W. N. Lin,; P. Yang,; J. Wang,; G. M. Chow, et al. Direct observation of room-temperature out-of-plane ferroelectricity and tunneling electroresistance at the two-dimensional limit. Nat. Commun. 2018, 9, 3319.
DOI Google Scholar
[67]
T. S. Böscke,; J. Müller,; D. Bräuhaus,; U. Schröder,; U. Böttger, Ferroelectricity in hafnium oxide thin films. Appl. Phys. Lett. 2011, 99, 102903.
DOI Google Scholar
[68]
J. Müller,; T. S. Böscke,; U. Schröder,; S. Mueller,; D. Bräuhaus,; U. Böttger,; L. Frey,; T. Mikolajick, Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett. 2012, 12, 4318-4323.
DOI Google Scholar
[69]
S. N. Shirodkar,; U. V. Waghmare, Emergence of ferroelectricity at a metal-semiconductor transition in a 1T monolayer of MoS2. Phys. Rev. Lett. 2014, 112, 157601.
DOI Google Scholar
[70]
E. Bruyer,; D. Di Sante,; P. Barone,; A. Stroppa,; M. H. Whangbo,; S. Picozzi, Possibility of combining ferroelectricity and Rashba-like spin splitting in monolayers of the 1T-type transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te). Phys. Rev. B 2016, 94, 195402.
DOI Google Scholar
[71]
Q. Yang,; M. H. Wu,; J. Li, Origin of two-dimensional vertical ferroelectricity in WTe2 bilayer and multilayer. J. Phys. Chem. Lett. 2018, 9, 7160-7164.
DOI Google Scholar
[72]
C. Liu,; W. H. Wan,; J. Ma,; W. Guo,; Y. G. Yao, Robust ferroelectricity in two-dimensional SbN and BiP. Nanoscale 2018, 10, 7984-7990.
DOI Google Scholar
[73]
L. Li,; M. H. Wu, Binary compound bilayer and multilayer with vertical polarizations: Two-dimensional ferroelectrics, multiferroics, and nanogenerators. ACS Nano 2017, 11, 6382-6388.
DOI Google Scholar
[74]
B. Xu,; H. Xiang,; Y. D. Xia,; K. Jiang,; X. G. Wan,; J. He,; J. Yin,; Z. G. Liu, Monolayer AgBiP2Se6: An atomically thin ferroelectric semiconductor with out-plane polarization. Nanoscale 2017, 9, 8427-8434.
DOI Google Scholar
[75]
F. C. Liu,; L. You,; K. L. Seyler,; X. B. Li,; P. Yu,; J. H. Lin,; X. W. Wang,; J. D. Zhou,; H. Wang,; H. Y. He, et al. Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes. Nat. Commun. 2016, 7, 12357.
DOI Google Scholar
[76]
W. S. Song,; R. X. Fei,; L. Yang, Off-plane polarization ordering in metal chalcogen diphosphates from bulk to monolayer. Phys. Rev. B 2017, 96, 235420.
DOI Google Scholar
[77]
S. Guan,; C. Liu,; Y. Lu,; Y. Yao,; S. A. Yang, Tunable ferroelectricity and anisotropic electric transport in monolayer β-GeSe. Phys. Rev. B 2018, 97, 144104.
DOI Google Scholar
[78]
H. Wang,; X. F. Qian, Two-dimensional multiferroics in monolayer group IV monochalcogenides. 2D Mater. 2017, 4, 015042.
DOI Google Scholar
[79]
W. H. Wan,; C. Liu,; W. D. Xiao,; Y. G. Yao, Promising ferroelectricity in 2D group IV tellurides: A first-principles study. Appl. Phys. Lett. 2017, 111, 132904.
DOI Google Scholar
[80]
X. L. Zhang,; Z. X. Yang,; Y. Chen, Novel two-dimensional ferroelectric PbTe under tension: A first-principles prediction. J. Appl. Phys. 2017, 122, 064101.
DOI Google Scholar
[81]
C. C. Xiao,; F. Wang,; S. A. Yang,; Y. H. Lu,; Y. P. Feng,; S. B. Zhang, Elemental ferroelectricity and antiferroelectricity in group-V monolayer. Adv. Funct. Mater. 2018, 28, 1707383.
DOI Google Scholar
[82]
Y. Wang,; C. C. Xiao,; M. G. Chen,; C. Q. Hua,; J. D. Zou,; C. Wu,; J. Z. Jiang,; S. A. Yang,; Y. H. Lu,; W. Ji, Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers. Mater. Horiz. 2018, 5, 521-528.
DOI Google Scholar
[83]
Z. Y. Fei,; W. J. Zhao,; T. A. Palomaki,; B. S. Sun,; M. K. Miller,; Z. Y. Zhao,; J. Q. Yan,; X. D. Xu,; D. H. Cobden, Ferroelectric switching of a two-dimensional metal. Nature 2018, 560, 336-339.
DOI Google Scholar
[84]
C. X. Zheng,; L. Yu,; L. Zhu,; J. L. Collins,; D. Kim,; Y. D. Lou,; C. Xu,; M. Li,; Z. Wei,; Y. P. Zhang, et al. Room temperature in-plane ferroelectricity in van der Waals In2Se3. Sci. Adv. 2018, 4, 7720.
DOI Google Scholar
[85]
K. Chang,; J. W. Liu,; H. C. Lin,; N. Wang,; K. Zhao,; A. M. Zhang,; F. Jin,; Y. Zhong,; X. P. Hu,; W. H. Duan, et al. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe. Science 2016, 353, 274-278.
DOI Google Scholar
[86]
A. Belianinov,; Q. He,; A. Dziaugys,; P. Maksymovych,; E. Eliseev,; A. Borisevich,; A. Morozovska,; J. Banys,; Y. Vysochanskii,; S. V. Kalinin, CuInP2S6 room temperature layered ferroelectric. Nano Lett. 2015, 15, 3808-3814.
DOI Google Scholar
[87]
L. You,; F. C. Liu,; H. S. Li,; Y. Z. Hu,; S. Zhou,; L. Chang,; Y. Zhou,; Q. D. Fu,; G. L. Yuan,; S. Dong, et al. In-plane ferroelectricity in thin flakes of van der Waals hybrid perovskite. Adv. Mater. 2018, 30, 1803249.
DOI Google Scholar
[88]
M. A. McGuire,; H. Dixit,; V. R. Cooper,; B. C. Sales, Coupling of crystal structure and magnetism in the layered, ferromagnetic insulator CrI3. Chem. Mater. 2015, 27, 612-620.
DOI Google Scholar
[89]
K. L. Seyler,; D. Zhong,; D. R. Klein,; S. Y. Gao,; X. O. Zhang,; B. Huang,; E. Navarro-Moratalla,; L. Yang,; D. H. Cobden,; M. A. McGuire, et al. Ligand-field helical luminescence in a 2D ferromagnetic insulator. Nat. Phys. 2018, 14, 277-281.
DOI Google Scholar
[90]
D. R. Klein,; D. MacNeill,; J. L. Lado,; D. Soriano,; E. Navarro- Moratalla,; K. Watanabe,; T. Taniguchi,; S. Manni,; P. Canfield,; J. Fernández-Rossier, et al. Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling. Science 2018, 360, 1218-1222.
DOI Google Scholar
[91]
S. Djurdjić Mijin,; A. Šolajić,; J. Pešić,; M. Šćepanović,; Y. Liu,; A. Baum,; C. Petrovic,; N. Lazarević,; Z. V. Popović, Lattice dynamics and phase transition in CrI3 single crystals. Phys. Rev. B 2018, 98, 104307.
DOI Google Scholar
[92]
Z. Y. Sun,; Y. F. Yi,; T. C. Song,; G. Clark,; B. Huang,; Y. W. Shan,; S. Wu,; D. Huang,; C. L. Gao,; Z. H. Chen, et al. Giant nonreciprocal second-harmonic generation from antiferromagnetic bilayer CrI3. Nature 2019, 572, 497-501.
DOI Google Scholar
[93]
D. R. Klein,; D. MacNeill,; Q. Song,; D. T. Larson,; S. Fang,; M. Y. Xu,; R. A. Ribeiro,; P. C. Canfield,; E. Kaxiras,; R. Comin, et al. Enhancement of interlayer exchange in an ultrathin two-dimensional magnet. Nat. Phys. 2019, 15, 1255-1260.
DOI Google Scholar
[94]
N. Sivadas,; S. Okamoto,; X. D. Xu,; C. J. Fennie,; D. Xiao, Stacking-dependent magnetism in bilayer CrI3. Nano Lett. 2018, 18, 7658-7664.
DOI Google Scholar
[95]
K. Guo,; B. W. Deng,; Z. Liu,; C. F. Gao,; Z. T. Shi,; L. Bi,; L. Zhang,; H. P. Lu,; P. H. Zhou,; L. B. Zhang, et al. Layer dependence of stacking order in nonencapsulated few-layer CrI3. Sci. China Mater. 2020, 63, 413-420.
DOI Google Scholar
[96]
B. Huang,; G. Clark,; D. R. Klein,; D. MacNeill,; E. Navarro-Moratalla,; K. L. Seyler,; N. Wilson,; M. A. McGuire,; D. H. Cobden,; D. Xiao, et al. Electrical control of 2D magnetism in bilayer CrI3. Nat. Nanotechnol. 2018, 13, 544-548.
DOI Google Scholar
[97]
S. W. Jiang,; L. Z. Li,; Z. F. Wang,; K. F. Mak,; J. Shan, Controlling magnetism in 2D CrI3 by electrostatic doping. Nat. Nanotechnol. 2018, 13, 549-553.
DOI Google Scholar
[98]
T. X. Li,; S. W. Jiang,; N. Sivadas,; Z. F. Wang,; Y. Xu,; D. Weber,; J. E. Goldberger,; K. Watanabe,; T. Taniguchi,; C. J. Fennie, et al. Pressure-controlled interlayer magnetism in atomically thin CrI3. Nat. Mater. 2019, 18, 1303-1308.
DOI Google Scholar
[99]
T. C. Song,; Z. Y. Fei,; M. Yankowitz,; Z. Lin,; Q. N. Jiang,; K. Hwangbo,; Q. Zhang,; B. S. Sun,; T. Taniguchi,; K. Watanabe, et al. Switching 2D magnetic states via pressure tuning of layer stacking. Nat. Mater. 2019, 18, 1298-1302.
DOI Google Scholar
[100]
W. Y. Xing,; Y. Y. Chen,; P. M. Odenthal,; X. Zhang,; W. Yuan,; T. Su,; Q. Song,; T. Y. Wang,; J. N. Zhong,; S. Jia, et al. Electric field effect in multilayer Cr2Ge2Te6: A ferromagnetic 2D material. 2D Mater. 2017, 4, 024009.
DOI Google Scholar
[101]
Z. Wang,; T. Y. Zhang,; M. Ding,; B. J. Dong,; Y. X. Li,; M. L. Chen,; X. X. Li,; J. Q. Huang,; H. W. Wang,; X. T. Zhao, et al. Electric-field control of magnetism in a few-layered van der Waals ferromagnetic semiconductor. Nat. Nanotechnol. 2018, 13, 554-559.
DOI Google Scholar
[102]
M. Lohmann,; T. Su,; B. Niu,; Y. S. Hou,; M. Alghamdi,; M. Aldosary,; W. Y. Xing,; J. N. Zhong,; S. Jia,; W. Han, et al. Probing magnetism in insulating Cr2Ge2Te6 by induced anomalous hall effect in Pt. Nano Lett. 2019, 19, 2397-2403.
DOI Google Scholar
[103]
Y. Tian,; M. J. Gary,; H. W. Ji,; R. J. Cava,; K. S. Burch, Magneto- elastic coupling in a potential ferromagnetic 2D atomic crystal. 2D Mater. 2016, 3, 025035.
DOI Google Scholar
[104]
H. J. Deiseroth,; K. Aleksandrov,; C. Reiner,; L. Kienle,; R. K. Kremer, Fe3GeTe2 and Ni3GeTe2—Two new layered transition-metal compounds: Crystal structures, HRTEM investigations, and magnetic and electrical properties. Eur. J. Inorg. Chem. 2006, 2006, 1561-1567.
DOI Google Scholar
[105]
Z. Y. Fei,; B. Huang,; P. Malinowski,; W. B. Wang,; T. C. Song,; J. Sanchez,; W. Yao,; D. Xiao,; X. Y. Zhu,; A. F. May, et al. Two- dimensional itinerant ferromagnetism in atomically thin Fe3GeTe2. Nat. Mater. 2018, 17, 778-782.
DOI Google Scholar
[106]
S. S. Liu,; X. Yuan,; Y. C. Zou,; Y. Sheng,; C. Huang,; E. Z. Zhang,; J. W. Ling,; Y. W. Liu,; W. Y. Wang,; C. Zhang, et al. Wafer-scale two-dimensional ferromagnetic Fe3GeTe2 thin films grown by molecular beam epitaxy. npj 2D Mater. Appl. 2017, 1, 30.
DOI Google Scholar
[107]
C. Tan,; J. Lee,; S. G. Jung,; T. Park,; S. Albarakati,; J. Partridge,; M. R. Field,; D. G. McCulloch,; L. Wang,; C. Lee, Hard magnetic properties in nanoflake van der Waals Fe3GeTe2. Nat. Commun. 2018, 9, 1554.
DOI Google Scholar
[108]
T. Jungwirth,; X. Marti,; P. Wadley,; J. Wunderlich, Antiferromagnetic spintronics. Nat. Nanotechnol. 2016, 11, 231-241.
DOI Google Scholar
[109]
V. Baltz,; A. Manchon,; M. Tsoi,; T. Moriyama,; T. Ono,; Y. Tserkovnyak, Antiferromagnetic spintronics. Rev. Mod. Phys. 2018, 90, 015005.
DOI Google Scholar
[110]
A. Wiedenmann,; J. Rossat-Mignod,; A. Louisy,; R. Brec,; J. Rouxel, Neutron diffraction study of the layered compounds MnPSe3 and FePSe3. Solid State Commun. 1981, 40, 1067-1072.
DOI Google Scholar
[111]
P. A. Joy,; S. Vasudevan, Magnetism in the layered transition-metal thiophosphates MPS3 (M = Mn, Fe, and Ni). Phys. Rev. B 1992, 46, 5425-5433.
DOI Google Scholar
[112]
B. Taylor,; J. Steger,; A. Wold,; E. Kostiner, Preparation and properties of iron phosphorus triselenide, FePSe3. Inorg. Chem. 1974, 13, 2719-2721.
DOI Google Scholar
[113]
X. Z. Wang,; K. Z. Du,; F. Y. Y. Liu,; P. Hu,; J. Zhang,; Q. Zhang,; M. H. S. Owen,; X. Lu,; C. K. Gan,; P. Sengupta, et al. Raman spectroscopy of atomically thin two-dimensional magneticiron phosphorus trisulfide (FePS3) crystals. 2D Mater. 2016, 3, 031009.
DOI Google Scholar
[114]
C. R. S. Haines,; M. J. Coak,; A. R. Wildes,; G. I. Lampronti,; C. Liu,; P. Nahai-Williamson,; H. Hamidov,; D. Daisenberger,; S. S. Saxena, Pressure-induced electronic and structural phase evolution in the van der Waals compound FePS3. Phys. Rev. Lett. 2018, 121, 266801.
DOI Google Scholar
[115]
J. Lee,; T. Y. Ko,; J. H. Kim,; H. Bark,; B. Kang,; S. G. Jung,; T. Park,; Z. Lee,; S. Ryu,; C. Lee, Structural and optical properties of single- and few-layer magnetic semiconductor CrPS4. ACS Nano 2017, 11, 10935-10944.
DOI Google Scholar
[116]
P. F. Gu,; Q. H. Tan,; Y. Wan,; Z. L. Li,; Y. X. Peng,; J. W. Lai,; J. C. Ma,; X. H. Yao,; S. Q. Yang,; K. Yuan, et al. Photoluminescent quantum interference in a van der Waals magnet preserved by symmetry breaking. ACS Nano 2020, 14, 1003-1010.
DOI Google Scholar
[117]
M. J. Lee,; S. Lee,; S. Lee,; K. Balamurugan,; C. Yoon,; J. T. Jang,; S. H. Kim,; D. H. Kwon,; M. Kim,; J. P. Ahn, et al. Synaptic devices based on two-dimensional layered single-crystal chromium thiophosphate (CrPS4). NPG Asia Mater. 2018, 10, 23-30.
DOI Google Scholar
[118]
W. J. Ding,; J. B. Zhu,; Z. Wang,; Y. F. Gao,; D. Xiao,; Y. Gu,; Z. Y. Zhang,; W. G. Zhu, Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materials. Nat. Commun. 2017, 8, 14956.
DOI Google Scholar
[119]
S. Y. Wan,; Y. Li,; W. Li,; X. Y. Mao,; W. G. Zhu,; H. L. Zeng, Room- temperature ferroelectricity and a switchable diode effect in two- dimensional α-In2Se3 thin layers. Nanoscale 2018, 10, 14885-14892.
DOI Google Scholar
[120]
H. J. Kim,; S. H. Kang,; I. Hamada,; Y. W. Son, Origins of the structural phase transitions in MoTe2 and WTe2. Phys. Rev. B 2017, 95, 180101.
DOI Google Scholar
[121]
Z. Wang,; D. Sapkota,; T. Taniguchi,; K. Watanabe,; D. Mandrus,; A. F. Morpurgo, Tunneling spin valves based on Fe3GeTe2/hBN/ Fe3GeTe2 van der Waals heterostructures. Nano Lett. 2018, 18, 4303-4308.
DOI Google Scholar
[122]
Z. Wang,; I. Gutiérrez-Lezama,; N. Ubrig,; M. Kroner,; M. Gibertini,; T. Taniguchi,; K. Watanabe,; A. Imamoğlu,; E. Giannini,; A. F. Morpurgo, Very large tunneling magnetoresistance in layered magnetic semiconductor CrI3. Nat. Commun. 2018, 9, 2516.
DOI Google Scholar
[123]
D. Ghazaryan,; M. T. Greenaway,; Z. Wang,; V. H. Guarochico-Moreira,; I. J. Vera-Marun,; J. Yin,; Y. Liao,; S. V. Morozov,; O. Kristanovski,; A. I. Lichtenstein, et al. Magnon-assisted tunnelling in van der Waals heterostructures based on CrBr3. Nat. Electron. 2018, 1, 344-349.
DOI Google Scholar
[124]
D. Zhong,; K. L. Seyler,; X. Linpeng,; R. Cheng,; N. Sivadas,; B. Huang,; E. Schmidgall,; T. Taniguchi,; K. Watanabe,; M. A. McGuire, et al. Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics. Sci. Adv. 2017, 3, 1603113.
DOI Google Scholar
[125]
M. N. Baibich,; J. M. Broto,; A. Fert,; F. N. Van Dau,; F. Petroff,; P. Etienne,; G. Creuzet,; A. Friederich,; J. Chazelas, Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices. Phys. Rev. Lett. 1988, 61, 2472-2475.
DOI Google Scholar
[126]
G. Binasch,; P. Grünberg,; F. Saurenbach,; W. Zinn, Enhanced magnetoresistance in layered magnetic structures with antiferromagnetic interlayer exchange. Phys. Rev. B 1989, 39, 4828-4830.
DOI Google Scholar
[127]
C. Ko,; Y. Lee,; Y. B. Chen,; J. Suh,; D. Y. Fu,; A. Suslu,; S. Lee,; J. D. Clarkson,; H. S. Choe,; S. Tongay, et al. Ferroelectrically gated atomically thin transition-metal dichalcogenides as nonvolatile memory. Adv. Mater. 2016, 28, 2923-2930.
DOI Google Scholar
[128]
K. Y. Ding,; J. J. Wang,; Y. X. Zhou,; H. Tian,; L. Lu,; R. Mazzarello,; C. L. Jia,; W. Zhang,; F. Rao,; E. Ma, Phase-change heterostructure enables ultralow noise and drift for memory operation. Science 2019, 366, 210-215.
DOI Google Scholar
[129]
W. C. Huang,; W. B. Zhao,; Z. Luo,; Y. W. Yin,; Y. Lin,; C. M. Hou,; B. B. Tian,; C. G. Duan,; X. G. Li, A high-speed and low-power multistate memory based on multiferroic tunnel junctions. Adv. Electron. Mater. 2018, 4, 1700560.
DOI Google Scholar
[130]
N. P. Lu,; P. F. Zhang,; Q. H. Zhang,; R. M. Qiao,; Q. He,; H. B. Li,; Y. J. Wang,; J. W. Guo,; D. Zhang,; Z. Duan, et al. Electric-field control of tri-state phase transformation with a selective dual-ion switch. Nature 2017, 546, 124-128.
DOI Google Scholar
[131]
X. Z. Chen,; X. F. Zhou,; R. Cheng,; C. Song,; J. Zhang,; Y. C. Wu,; Y. Ba,; H. B. Li,; Y. M. Sun,; Y. F. You, et al. Electric field control of Néel spin-orbit torque in an antiferromagnet. Nat. Mater. 2019, 18, 931-935.
DOI Google Scholar
[132]
A. F. May,; D. Ovchinnikov,; Q. Zheng,; R. Hermann,; S. Calder,; B. Huang,; Z. Y. Fei,; Y. H. Liu,; X. D. Xu,; M. A. McGuire, Ferromagnetism near room temperature in the cleavable van der Waals crystal Fe5GeTe2. ACS Nano 2019, 13, 4436-4442.
DOI Google Scholar
[133]
D. Shcherbakov,; P. Stepanov,; D. Weber,; Y. X. Wang,; J. Hu,; Y. L. Zhu,; K. Watanabe,; T. Taniguchi,; Z. Q. Mao,; W. Windl, et al. Raman spectroscopy, photocatalytic degradation, and stabilization of atomically thin chromium tri-iodide. Nano Lett. 2018, 18, 4214-4219.
DOI Google Scholar
[134]
A. Fert,; V. Cros,; J. Sampaio, Skyrmions on the track. Nat. Nanotechnol. 2013, 8, 152-156.
DOI Google Scholar
Publication history
Copyright
Acknowledgements

Publication history

Received: 07 March 2020
Revised: 29 April 2020
Accepted: 08 May 2020
Published: 29 May 2020
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

We acknowledge financial support from the National Natural Science Foundation of China (Nos. 51602040 and 51872039), Science and Technology Program of Sichuan (No. M112018JY0025) and Scientific Research Foundation for New Teachers of UESTC (No. A03013023601007).

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