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Nano Research 2021, 14(6): 1659-1662 https://doi.org/10.1007/s12274-020-2859-9
Research Article | Issue | Published: 09 June 2020

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Show Author's Information Shengxue Zhou1,2,  Lina Liu1,  Shuang Cui3,  Xiaofan Ping1,  Dake Hu1,  Liying Jiao1( )
Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
Department of Chemistry and Chemical Engineering, Ningxia Normal University, Guyuan 756000, China
Sinopec Beijing Research Institute of Chemical Industry, Beijing 100013, China
Keywords:
chemical vapor deposition, two-dimensional, tungsten disulfide, field effect transistors
Topics:
Chemical vapor depositionMonolayersNanoelectronics Semiconductor devices Single crystalsSulfur compoundsTungsten compounds
Cite this article:
Zhou S, Liu L, Cui S, et al. Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition. Nano Research, 2021, 14(6): 1659-1662. https://doi.org/10.1007/s12274-020-2859-9
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Abstract Full text Electronic supplementary material About this article

Two-dimensional (2D) tungsten disulfide (WS2) has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic devices. The controllable synthesis of WS2 monolayers (1L) with both large size and high quality remains as a challenge. Here, we developed a new approach for the chemical vapor deposition (CVD) growth of WS2 monolayers by using K2WS4 as the growth precursor. The simple chemistry involved in our approach allowed for improved controllability and a fast growth rate of ~ 30 μm·min-1. We achieved the reliable growth of 1L WS2 flakes with side lengths of up to ~ 500 μm and the obtained WS2 flakes were 2D single crystals with low density of defects over a large area as evidenced by various spectroscopic and microscopic characterizations. In addition, the large 1L WS2 single crystals we obtained showed higher electrical performance than their counterparts grown with previous approaches, demonstrating the potential of our approach in producing high quality and large 2D semiconductors for future nanoelectronics.


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Electronic supplementary material
About this article

Fast growth of large single-crystalline WS2 monolayers via chemical vapor deposition

Show Author's information Shengxue Zhou1,2, Lina Liu1, Shuang Cui3, Xiaofan Ping1, Dake Hu1, Liying Jiao1( )
Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
Department of Chemistry and Chemical Engineering, Ningxia Normal University, Guyuan 756000, China
Sinopec Beijing Research Institute of Chemical Industry, Beijing 100013, China

Abstract

Two-dimensional (2D) tungsten disulfide (WS2) has emerged as a promising ultrathin semiconductor for building high-performance nanoelectronic devices. The controllable synthesis of WS2 monolayers (1L) with both large size and high quality remains as a challenge. Here, we developed a new approach for the chemical vapor deposition (CVD) growth of WS2 monolayers by using K2WS4 as the growth precursor. The simple chemistry involved in our approach allowed for improved controllability and a fast growth rate of ~ 30 μm·min-1. We achieved the reliable growth of 1L WS2 flakes with side lengths of up to ~ 500 μm and the obtained WS2 flakes were 2D single crystals with low density of defects over a large area as evidenced by various spectroscopic and microscopic characterizations. In addition, the large 1L WS2 single crystals we obtained showed higher electrical performance than their counterparts grown with previous approaches, demonstrating the potential of our approach in producing high quality and large 2D semiconductors for future nanoelectronics.

Keywords: chemical vapor deposition, two-dimensional, tungsten disulfide, field effect transistors

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Publication history
Copyright
Acknowledgements

Publication history

Received: 03 March 2020
Revised: 03 May 2020
Accepted: 08 May 2020
Published: 09 June 2020
Issue date: June 2021

Copyright

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature

Acknowledgements

We acknowledge the National Natural Science Foundation of China (Nos. 21875127 and 21925504) and Tsinghua University Initiative Scientific Research Program.

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